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隔離式閘極驅動器

UCC21220A

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產品規格表
使用指南

UCC21220A

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 2 Isolation rating Basic Power switch IGBT, MOSFET Withstand isolation voltage (VISO) (Vrms) 3000 Working isolation voltage (VIOWM) (Vrms) 990 Transient isolation voltage (VIOTM) (VPK) 4242 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Disable Output VCC/VDD (min) (V) 6 Output VCC/VDD (max) (V) 18 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.028 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Catalog Rise time (ns) 5 Fall time (ns) 6 Undervoltage lockout (typ) (V) 5
Number of channels 2 Isolation rating Basic Power switch IGBT, MOSFET Withstand isolation voltage (VISO) (Vrms) 3000 Working isolation voltage (VIOWM) (Vrms) 990 Transient isolation voltage (VIOTM) (VPK) 4242 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Disable Output VCC/VDD (min) (V) 6 Output VCC/VDD (max) (V) 18 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.028 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Catalog Rise time (ns) 5 Fall time (ns) 6 Undervoltage lockout (typ) (V) 5
SOIC (D) 16 59.4 mm² (9.9 mm × 6 mm)
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Supports basic and functional isolation
  • CMTI greater than 125V/ns
  • Up to 4A peak source, 6A peak sink output
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • Up to 25V VDD output drive supply
    • 5V and 8V VDD UVLO Options
  • Junction temperature range (Tj) –40°C to 150°C
  • Narrow body SOIC-16 (D) package
  • TTL and CMOS compatible inputs
  • Safety-related certifications:
    • 4242VPK isolation per DIN EN IEC 60747-17 (VDE 0884-17) (planned)
    • 3000VRMS isolation for 1 minute per UL 1577 (planned)
    • CQC certification per GB4943.1-2022 (planned)
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Supports basic and functional isolation
  • CMTI greater than 125V/ns
  • Up to 4A peak source, 6A peak sink output
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • Up to 25V VDD output drive supply
    • 5V and 8V VDD UVLO Options
  • Junction temperature range (Tj) –40°C to 150°C
  • Narrow body SOIC-16 (D) package
  • TTL and CMOS compatible inputs
  • Safety-related certifications:
    • 4242VPK isolation per DIN EN IEC 60747-17 (VDE 0884-17) (planned)
    • 3000VRMS isolation for 1 minute per UL 1577 (planned)
    • CQC certification per GB4943.1-2022 (planned)

The UCC21220 and UCC21220A devices are basic and functional isolated dual-channel gate drivers with 4A peak-source and 6A peak-sink current. They are designed to drive power MOSFETs and GaNFETs in PFC, Isolated DC/DC, and synchronous rectification applications, with fast switching performance and robust ground bounce protection through greater than 125V/ns common-mode transient immunity (CMTI).

These devices can be configured as two low-side drivers, two high-side drivers, or half-bridge drivers. Two outputs can be paralleled to form a single driver which doubles the drive strength for heavy load conditions due to the best-in-class delay matching performance.

Protection features include the following: DIS pin shuts down both outputs simultaneously when it is set high, all supplies have undervoltage lockout (UVLO), and active pulldown protection clamps the output below 2V when unpowered or floated.

With these features, these devices enable high efficiency, high power density, and robustness in a wide variety of power applications.

The UCC21220 and UCC21220A devices are basic and functional isolated dual-channel gate drivers with 4A peak-source and 6A peak-sink current. They are designed to drive power MOSFETs and GaNFETs in PFC, Isolated DC/DC, and synchronous rectification applications, with fast switching performance and robust ground bounce protection through greater than 125V/ns common-mode transient immunity (CMTI).

These devices can be configured as two low-side drivers, two high-side drivers, or half-bridge drivers. Two outputs can be paralleled to form a single driver which doubles the drive strength for heavy load conditions due to the best-in-class delay matching performance.

Protection features include the following: DIS pin shuts down both outputs simultaneously when it is set high, all supplies have undervoltage lockout (UVLO), and active pulldown protection clamps the output below 2V when unpowered or floated.

With these features, these devices enable high efficiency, high power density, and robustness in a wide variety of power applications.
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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 UCC21220, UCC21220A 4A, 6A, Dual-Channel Basic and Functional Isolated Gate Drivers with High Noise Immunity datasheet (Rev. G) PDF | HTML 2024/11/8
* 使用指南 Gate Drive Voltage vs. Efficiency 2019/4/25
證書 FPPT2 - Nonoptical Isolating Devices UL 1577 Certificate of Compliance (Rev. A) 2026/9/24
證書 VDE Certificate for Basic Isolation for DIN EN IEC 60747-17 (Rev. AA) 2026/6/11
測試報告 Peak Efficiency at 99%, 585-W High-Voltage Buck Reference Design 2020/4/24
Application brief External Gate Resistor Selection Guide (Rev. A) 2020/2/28
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020/2/28
Application brief How to Drive High Voltage GaN FETs with UCC21220A 2019/3/6
白皮書 Impact of an isolated gate driver (Rev. A) 2019/2/20
應用說明 Common Mode Transient Immunity (CMTI) for UCC2122x Isolated Gate Drivers 2018/7/19
應用說明 Solar Inverter Layout Considerations for UCC21220 2018/6/6
白皮書 Demystifying high-voltage power electronics for solar inverters 2018/6/6

設計與開發

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開發板

UCC21220EVM-009 — UCC21220 4A、6A 3.0kVRMS 隔離式雙通道閘極驅動器評估模組

UCC21220EVM-009 專為評估 UCC21220 所設計，該元件為一款具備 3.0 kVRMS 隔離能力的雙通道閘極驅動器，可提供 4.0A 源電流與 6.0A 汲電流的峰值驅動能力。此 EVM 的目標是依照產品規格書參數評估驅動器 IC 的性能。EVM 也可當成驅動器 IC 元件選擇指南使用。EVM 可用於判斷對閘極驅動器性能的 PCB 佈線圖影響。
使用指南: PDF
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模擬型號

UCC21220AD PSpice Transient Model

SLUM649.ZIP (58 KB) - PSpice 模型
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模擬型號

UCC21220AD Unencrypted PSpice Transient Model

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參考設計

PMP30446 — 具有標準 Si-MOSFET 的 99% 峰值效率、585-W 高電壓降壓參考設計

此參考設計可在 1.5 A 時將 450 V 至 780 V 範圍內的 DC 輸入來源轉換為非隔離式 390 V。由於實際功率級僅使用標準矽元件，因此這是 SiC-FET 與 SiC-二極體降壓轉換器的替代解決方案。為了採用 600 V 額定裝置，已將輸入來源分離，以便兩個相同的降壓級共用中心點。單一耦合電感器 (1:1) 會自動平衡中心點。兩個小型串聯電感器會在電壓不平衡及兩個 FET 的閘極驅動延遲時間出現任何微小變化時限制各個分支的電流。轉換器可將 CRM 模式 (臨界導通模式) 所導致的切換損耗降到最低，在 450 V 輸入電壓與全負載下，可實現 99% 的峰值效率。
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參考設計

PMP40500 — 54-VDC 輸入、12-V 42-A 輸出半橋參考設計

此 12-V、42-A 輸出半橋式參考設計適合有線網路園區與分公司交換器中的匯流排轉換器。此設計具高效率及各種故障保護 (過電流和短路)。此設計採用 3 kVRMS 基本及功能隔離式閘極驅動器 UCC21220D, UCC21220AD, UCC21222D 及 5.7-kRMS 強化隔離式閘極驅動器 UCC21540D, UCC21540DWK and UCC21541DW 以提供效率比較。

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