SLVSF07 July   2021 TPS7H5001-SP

ADVANCE INFORMATION  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  VIN and VLDO
      2. 7.3.2  Startup
      3. 7.3.3  Enable and Undervoltage Lockout (UVLO)
      4. 7.3.4  Voltage Reference
      5. 7.3.5  Error Amplifier
      6. 7.3.6  Output Voltage Programming
      7. 7.3.7  Soft-Start (SS)
      8. 7.3.8  Switching Frequency and External Synchronization
        1. 7.3.8.1 Internal Oscillator Mode
        2. 7.3.8.2 External Synchronization Mode
        3. 7.3.8.3 Primary-Secondary Mode
      9. 7.3.9  Primary Switching Outputs (OUTA and OUTB)
      10. 7.3.10 Synchronous Rectifier Outputs (SRA and SRB)
      11. 7.3.11 Dead Time and Leading Edge Blank Time Programmability (PS, SP, and LEB)
      12. 7.3.12 Pulse Skipping
      13. 7.3.13 Duty Cycle Programmability
      14. 7.3.14 Current Sense and PWM Generation (CS_ILIM)
      15. 7.3.15 Hiccup Mode Operation (HICC)
      16. 7.3.16 External Fault Protection (FAULT)
      17. 7.3.17 Slope Compensation (RSC)
      18. 7.3.18 Frequency Compensation
      19. 7.3.19 Thermal Shutdown
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Switching Frequency
        2. 8.2.2.2  Output Voltage Programming Resistors
        3. 8.2.2.3  Dead Time
        4. 8.2.2.4  Leading Edge Blank Time
        5. 8.2.2.5  Soft-Start Capacitor
        6. 8.2.2.6  Transformer
        7. 8.2.2.7  Main Switching FETs
        8. 8.2.2.8  Synchronous Rectificier FETs
        9. 8.2.2.9  RCD Clamp
        10. 8.2.2.10 Output Inductor
        11. 8.2.2.11 Output Capacitance and Filter
        12. 8.2.2.12 Sense Resistor
        13. 8.2.2.13 Hiccup Capacitor
        14. 8.2.2.14 Frequency Compensation Components
        15. 8.2.2.15 Slope Compensation Resistor
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
  • HFT|22
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Dead Time

For GaN power semiconductor devices, a key characteristic that has to be taken into consideration is the voltage drop of the GaN FET while it is operating in reverse conduction mode. While the GaN FET does not have a body diode that is inherent in the silicon FET, it does still have the ability to conduct current in the reverse direction with behavior that is similar to a diode. When conducting in the reverse direction, the source-drain voltage of the GaN FET can be quite large. Thus, to reduce the dead-time losses and maximize efficiency, the dead time was set to a value of approximately 25 ns. Based on the selected value, Equation 8 can be used to calculate the resistors needed to attain the desired dead time.

Equation 27.

The standard resistor value of 20.5 kΩ was selected for both RPS and RSP.