SLUSG35 August   2026 TPS12S24F-Q1

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 SPI Timing Requirements
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Supply Input
      2. 7.3.2 Charge Pump and Gate Driver Output (VS, GATEx, BSTx, SRCx)
      3. 7.3.3 Driving Capacitive, Resistive and Inductive Loads
        1. 7.3.3.1 Capacitive Load Driving
          1. 7.3.3.1.1 Using SCP Based Auto-Retry Method (GATEx):
          2. 7.3.3.1.2 Using Main Path Gate Slew Rate Control Method (GATEx, SRCx):
          3. 7.3.3.1.3 Using PWM Control Method (GATEx):
        2. 7.3.3.2 Resistive or Inductive Load Driving
      4. 7.3.4 Protection Mechanisms
        1. 7.3.4.1 I2T Based Overcurrent and Short-Circuit Protection
        2. 7.3.4.2 NTC-Based External FET Over-Temperature Protection
        3. 7.3.4.3 Device Junction Overtemperature Warning
        4. 7.3.4.4 Input Undervoltage and Overvoltage Protection
        5. 7.3.4.5 External FET Drain to Source Voltage (VDS) Overvoltage Protection
        6. 7.3.4.6 Bi-VDS Based Short-Circuit Protection
        7. 7.3.4.7 Reverse Polarity Protection
        8. 7.3.4.8 Loss of Ground
      5. 7.3.5 Diagnostic Mechanisms
        1. 7.3.5.1 ADC Sense Signals
        2. 7.3.5.2 Analog and Digital Current Monitor (VIMONx)
        3. 7.3.5.3 Input Supply Voltage Measurement
        4. 7.3.5.4 Output Voltage Measurement
        5. 7.3.5.5 External FET Temperature Measurement
        6. 7.3.5.6 External FET Bi-Directional Drain to Source (Bi-VDS) Measurement
        7. 7.3.5.7 Controller Temperature Measurement
        8. 7.3.5.8 VOUT Short-to-Battery or FET Short and Open-Load Detection
          1. 7.3.5.8.1 Measurement With Main FET (GATEx) Enabled
          2. 7.3.5.8.2 Detection With Main FET (GATEx) Disabled
        9. 7.3.5.9 VOUT Short-to-Battery or FET Short Detection For Power At All Times (PAAT) Loads
      6. 7.3.6 Fault Indication (FLT / WAKE)
      7. 7.3.7 Output Disable (OUT_DISx) Function
      8. 7.3.8 Brief Supply Interruptions Behaviour
      9. 7.3.9 SPI Mode Operation
    4. 7.4 Device Functional Modes
      1. 7.4.1 State Diagram
      2. 7.4.2 Power Down
      3. 7.4.3 Sleep Mode
      4. 7.4.4 Config or Active Mode (AM)
      5. 7.4.5 Low Power Mode (LPM)
      6. 7.4.6 Limphome Mode
    5. 7.5 TPS12S24F-Q1 Pre-Production Silicon Limitations
      1. 7.5.1 SDO Pin Tristate Discrete Workaround (Only for parallel SPI configuration not for daisy chain)
  9. 8 Register Maps
    1. 8.1 TPS12S24F-Q1 Registers
    2. 8.2 EEPROM (NVM) Overview
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Driving Power at All Times (PAAT) Loads With Automatic Load Wakeup and Output Bulk Capacitor Charging
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
    3. 9.3 System Examples
      1. 9.3.1 TPS12S24F-Q1 System Level Configurations
    4. 9.4 Power Supply Recommendations
      1. 9.4.1 Transient and EMI/EMC Recommendations
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Tape and Reel Information
    2. 12.2 Mechanical Data

7.3.3.2 Resistive or Inductive Load Driving

Resistive loads are the simplest loads to drive as they follow Ohm’s Law (V = I * R).

It's simple because the designer knows the voltage (typically 13.5V or 52V for a car battery) and the resistance of the load (by measuring it with an Ohm meter). With these two parameters they can calculate the maximum current that will be flowing through the circuit. In typical applications the current through the load needs to be varied to provide the intended output. The most basic way to vary the current through the load is through pulse width modulating (PWM).

An inductive load is any load that stores magnetic energy when connected to a supply voltage. The inductive load impedance consists of both a resistance and inductance in series. When they are switched off inductive loads can generate a transient negative voltage of hundreds of volts due to the stored magnetic energy in the inductance. This transient voltage can cause severe damage to the drive circuit. To prevent any potential damage, during switch-off the stored magnetic energy must be dissipated by clamping the voltage across the inductive load. An external TVS or standard diode is connected from output to ground (or TVS diode across drain to source) that protects the circuit by clamping the voltage over the switch to a set voltage and recirculating the current through the clamp. This causes the stored energy to be safely dissipated. With this large clamp voltage the demagnetization time is decreased leading to a safe and quick turn off time for inductive loads.

Figure shows application circuit for driving resistive or Inductive loads. Refer to Table 7-1 for all configurable parameters during this mode.

TPS12S24F-Q1 TPS12SxxF-Q1 Application Ciruit for Driving Inductive or Resistive Loads Figure 7-9 TPS12SxxF-Q1 Application Ciruit for Driving Inductive or Resistive Loads