SLVSH22A May   2024  – September 2025 DRV8000-Q1

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Comparison
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings Auto
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information RGZ package
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 External Components
    4. 7.4 Feature Description
      1. 7.4.1 Heater MOSFET Driver
        1. 7.4.1.1 Heater MOSFET Driver Control
        2. 7.4.1.2 Heater MOSFET Driver Protection
          1. 7.4.1.2.1 Heater SH_HS Internal Diode
          2. 7.4.1.2.2 Heater MOSFET VDS Overcurrent Protection (HEAT_VDS)
          3. 7.4.1.2.3 Heater MOSFET Open Load Detection
      2. 7.4.2 High-Side Drivers
        1. 7.4.2.1 High-side Driver Control
          1. 7.4.2.1.1 High-side Driver PWM Generator
          2. 7.4.2.1.2 Constant Current Mode
          3. 7.4.2.1.3 OUTx HS ITRIP Behavior
          4. 7.4.2.1.4 High-side Drivers - Parallel Outputs
        2. 7.4.2.2 High-side Driver Protection Circuits
          1. 7.4.2.2.1 High-side Drivers Internal Diode
          2. 7.4.2.2.2 High-side Driver Short-circuit Protection
          3. 7.4.2.2.3 High-side Driver Overcurrent Protection
          4. 7.4.2.2.4 High-side Driver Open Load Detection
      3. 7.4.3 Electrochromic Glass Driver
        1. 7.4.3.1 Electrochromic Driver Control
        2. 7.4.3.2 Electrochromic Driver Protection
      4. 7.4.4 Half-bridge Drivers
        1. 7.4.4.1 Half-bridge Control
        2. 7.4.4.2 OUT1 and OUT2 High-side Driver Mode
        3. 7.4.4.3 Half-bridge Register Control
        4. 7.4.4.4 Half-Bridge ITRIP Regulation
        5. 7.4.4.5 Half-bridge Protection and Diagnostics
          1. 7.4.4.5.1 Half-Bridge Off-State Diagnostics (OLP)
          2. 7.4.4.5.2 Half-bridge Open Load Detection
          3. 7.4.4.5.3 Half-Bridge Overcurrent Protection
      5. 7.4.5 Gate Drivers
        1. 7.4.5.1 Input PWM Modes
          1. 7.4.5.1.1 Half-Bridge Control
          2. 7.4.5.1.2 H-Bridge Control
          3. 7.4.5.1.3 DRVOFF - Gate Driver Shutoff Pin
        2. 7.4.5.2 Smart Gate Driver - Functional Block Diagram
          1. 7.4.5.2.1  Smart Gate Driver
          2. 7.4.5.2.2  Functional Block Diagram
          3. 7.4.5.2.3  Slew Rate Control (IDRIVE)
          4. 7.4.5.2.4  Gate Driver State Machine (TDRIVE)
            1. 7.4.5.2.4.1 tDRIVE Calculation Example
          5. 7.4.5.2.5  Propagation Delay Reduction (PDR)
          6. 7.4.5.2.6  PDR Pre-Charge/Pre-Discharge Control Loop Operation Details
          7. 7.4.5.2.7  PDR Post-Charge/Post-Discharge Control Loop Operation Details
            1. 7.4.5.2.7.1 PDR Post-Charge/Post-Discharge Setup
          8. 7.4.5.2.8  Detecting Drive and Freewheel MOSFET
          9. 7.4.5.2.9  Automatic Duty Cycle Compensation (DCC)
          10. 7.4.5.2.10 Closed Loop Slew Time Control (STC)
            1. 7.4.5.2.10.1 STC Control Loop Setup
        3. 7.4.5.3 Tripler (Double-Stage) Charge Pump
        4. 7.4.5.4 Wide Common Mode Differential Current Shunt Amplifier
        5. 7.4.5.5 Gate Driver Protection Circuits
          1. 7.4.5.5.1 MOSFET VDS Overcurrent Protection (VDS_OCP)
          2. 7.4.5.5.2 Gate Driver Fault (VGS_GDF)
          3. 7.4.5.5.3 Offline Short-circuit and Open Load Detection (OOL and OSC)
      6. 7.4.6 Sense Output (IPROPI)
      7. 7.4.7 Protection Circuits
        1. 7.4.7.1 Fault Reset (CLR_FLT)
        2. 7.4.7.2 DVDD Logic Supply Power on Reset (DVDD_POR)
        3. 7.4.7.3 PVDD Supply Undervoltage Monitor (PVDD_UV)
        4. 7.4.7.4 PVDD Supply Overvoltage Monitor (PVDD_OV)
        5. 7.4.7.5 VCP Charge Pump Undervoltage Lockout (VCP_UV)
        6. 7.4.7.6 Thermal Clusters
        7. 7.4.7.7 Watchdog Timer
        8. 7.4.7.8 Fault Detection and Response Summary Table
    5. 7.5 Programming
      1. 7.5.1 Serial Peripheral Interface (SPI)
      2. 7.5.2 SPI Format
      3. 7.5.3 Timing Diagrams
  9. DRV8000-Q1 Register Map
    1. 8.1 DRV8000-Q1_STATUS Registers
    2. 8.2 DRV8000-Q1_CNFG Registers
    3. 8.3 DRV8000-Q1_CTRL Registers
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 IDRIVE Calculation Example
        2. 9.2.2.2 tDRIVE Calculation Example
        3. 9.2.2.3 Maximum PWM Switching Frequency
        4. 9.2.2.4 Current Shunt Amplifier Configuration
    3. 9.3 Initialization Setup
    4. 9.4 Power Supply Recommendations
      1. 9.4.1 Bulk Capacitance Sizing
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Pre-Production Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Package Option Addendum
    2. 12.2 Tape and Reel Information

Electrochromic Driver Control

Below is the block diagram for the electrochromic driver:

DRV8000-Q1 Electrochromic Driver Block
                    Diagram - Default Configuration Figure 7-8 Electrochromic Driver Block Diagram - Default Configuration

Depending on the system implementation, the device electrochrome driver supports configuration where the drain of electrochrome high-side charge MOSFET can be supplied from either high-side driver OUT11, or directly from the supply voltage (PVDD). The EC control block can operate independently of the OUT11 or external FET supply (PVDD), with independent protection circuits in either configuration. This can be useful if an extra high-side driver is needed to drive another load. The main limitation in this configuration is that if the charge MOSFET fails short, the connection to supply cannot be shut off as when OUT11 is used as EC supply. A short, over voltage and open-load condition can still be detected when EC supplied with PVDD directly (OUT11 is configured as independent).

OUT11 for EC supply: This configuration is set in register HS_OC_CNFG, bit OUT11_EC_MODE. By default, OUT11_EC_MODE = 1b, which is configured as the supply for EC drive as shown in the block diagram Electrochromic Driver Block Diagram - Default Configuration. When in this configuration, bits OUT11_CNFG in register HS_HEAT_OUT_CNFG are ignored (ON/OFF, SPI/PWM). Both OUT11 and the 1.2Ω ECFB low-side discharge MOSFET have overcurrent, over voltage and passive open load detection active during EC charge and discharge states, respectfully.

PVDD for EC supply, independent OUT11:To use OUT11 as an independent high-side driver (independent of EC control) to drive a separate load, where the drain of the EC charge MOSFET is connected directly to supply voltage, set OUT11_EC_MODE = 0b in register HS_OC_CNFG.

Independent mode ITRIP regulation is valid for OUT11 when the pin is not used as EC. When OUT11 is in EC mode, no current regulation is performed even if the regulation mode is configured.

As before, the ECFB low-side discharge MOSFET protection circuits are active during EC discharge state. The diagram below shows this configuration:

DRV8000-Q1 Electrochrome with direct PVDD
                    supply (OUT11 independent) Figure 7-9 Electrochrome with direct PVDD supply (OUT11 independent)

To enable the EC driver: Set bits EC_ON and EC_V_TAR to the desired target voltage in register HS_EC_HEAT_CTRL to enable the EC driver control loop. Once these bits are set, EC driver control loop is enabled.

For EC element voltage control: Once the EC driver is enabled, the feedback loop of the driver is activated, and regulates ECFB pin voltage to the target voltage set in bits EC_V_TAR in register HS_EC_HEAT_CTRL. The target voltage on ECFB pin is binary coded with a full-scale range of either 1.5V or 1.2V, depending if bit ECFB_MAX in register EC_CNFG is set to 1 or 0, respectively. ECFB_MAX = 0b is the default value (1.2V).

Whenever a new value for the EC voltage is set, there is a blanking time tBLK_ECFB of 250μs for ECFB_HI or ECFB_LO status indication of ECFB once the control loop begins regulation to the new target value.

The device provides two discharge modes: fast discharge and PWM discharge.

Fast discharge of the EC element: To fully discharge the EC element with fast discharge ECFB_LS_PWM must be set to 0b. The target output voltage EC_V_TAR must also be set to 0b, and bits ECFB_LS_EN, and EC_ON must be set to 1b in EC_CNFG. When these four conditions are met, the voltage at pin ECFB is discharged by pulling the internal 1.2Ω low-side MOSFET on ECFB pin to ground.

  1. Configure ECFB_LS_PWM = 0b in register EC_CNFG
  2. Set bits ECFB_LS_EN = 1b, EC_ON = 1b and EC_V_TAR = 0b in register HS_EC_HEAT_CTRL.
  3. ECFB LS MOSFET is enabled and performs fast discharge of EC mirror.

PWM discharge of the EC element: The steps below outline the PWM discharge cycle of electrochrome driver:

  1. Configure ECFB_LS_PWM = 1b in register EC_CNFG
  2. Set bits ECFB_LS_EN = 1b, EC_ON = 1b in register HS_EC_HEAT_CTRL.
  3. If the regulation loop detects VECDRV is less than VECFB and VECDRV is less than 400mV for longer than tRECHARGE or 3ms, the ECDRV regulator is switched off and the LS MOSFET on ECFB is activated for approximately 300ms (tDISCHARGE). During this discharge, the ECDRV output is pulled low to prevent shoot-thru currents.
  4. At the end of the discharge pulse tDISCHARGE, the discharge MOSFET is switched off and the regulation loop is activated again with the new lower value. The regulation loop goes back to step 2, and out of regulation is again observed (VECDRV < 400mV or VECDRV < VECFB). If out of regulation condition is not met the loop goes back to normal operation state.

The diagram below shows the PWM discharge cycle of the electrochrome driver:

DRV8000-Q1 Electrochrome Discharge with
                    PWM Figure 7-10 Electrochrome Discharge with PWM

The status of the voltage control loop is reported through SPI, and TI recommends to observe the report to determine the EC charge and discharge control timing. If the voltage at pin ECFB is higher than the target value by greater than 120mV, then bit ECFB_HI is set. If the voltage at pin ECFB is lower than the target value by 120mV , ECFB_LO is set. Both ECFB status bits ECFB_HI and ECFB_LO are valid if stable for at least the filter time tFT_ECFB. The bits are not latched, and are not designated as global faults.

Exit discharge mode: To exit discharge mode set EC_V_TAR to a non-zero value. There is no need to change ECFB_LS_EN bit when a new target voltage is programmed, the control loop internal logic prevents both OUT11 and ECFB LS from being simultaneously on.

A capacitor of at least 4.7nF has to be added to pin ECDRV, and 220nF capacitor between ECFB and ground to increase control loop stability. For noise immunity reasons, TI recommends to place the loop capacitors as close as possible to the respective pins.

If the EC driver is not used, connect ECFB pin to ground.