SLVSH22A May   2024  – September 2025 DRV8000-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings Auto
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information RGZ package
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 External Components
    4. 7.4 Feature Description
      1. 7.4.1 Heater MOSFET Driver
        1. 7.4.1.1 Heater MOSFET Driver Control
        2. 7.4.1.2 Heater MOSFET Driver Protection
          1. 7.4.1.2.1 Heater SH_HS Internal Diode
          2. 7.4.1.2.2 Heater MOSFET VDS Overcurrent Protection (HEAT_VDS)
          3. 7.4.1.2.3 Heater MOSFET Open Load Detection
      2. 7.4.2 High-Side Drivers
        1. 7.4.2.1 High-side Driver Control
          1. 7.4.2.1.1 High-side Driver PWM Generator
          2. 7.4.2.1.2 Constant Current Mode
          3. 7.4.2.1.3 OUTx HS ITRIP Behavior
          4. 7.4.2.1.4 High-side Drivers - Parallel Outputs
        2. 7.4.2.2 High-side Driver Protection Circuits
          1. 7.4.2.2.1 High-side Drivers Internal Diode
          2. 7.4.2.2.2 High-side Driver Short-circuit Protection
          3. 7.4.2.2.3 High-side Driver Overcurrent Protection
          4. 7.4.2.2.4 High-side Driver Open Load Detection
      3. 7.4.3 Electrochromic Glass Driver
        1. 7.4.3.1 Electrochromic Driver Control
        2. 7.4.3.2 Electrochromic Driver Protection
      4. 7.4.4 Half-bridge Drivers
        1. 7.4.4.1 Half-bridge Control
        2. 7.4.4.2 OUT1 and OUT2 High-side Driver Mode
        3. 7.4.4.3 Half-bridge Register Control
        4. 7.4.4.4 Half-Bridge ITRIP Regulation
        5. 7.4.4.5 Half-bridge Protection and Diagnostics
          1. 7.4.4.5.1 Half-Bridge Off-State Diagnostics (OLP)
          2. 7.4.4.5.2 Half-bridge Open Load Detection
          3. 7.4.4.5.3 Half-Bridge Overcurrent Protection
      5. 7.4.5 Gate Drivers
        1. 7.4.5.1 Input PWM Modes
          1. 7.4.5.1.1 Half-Bridge Control
          2. 7.4.5.1.2 H-Bridge Control
          3. 7.4.5.1.3 DRVOFF - Gate Driver Shutoff Pin
        2. 7.4.5.2 Smart Gate Driver - Functional Block Diagram
          1. 7.4.5.2.1  Smart Gate Driver
          2. 7.4.5.2.2  Functional Block Diagram
          3. 7.4.5.2.3  Slew Rate Control (IDRIVE)
          4. 7.4.5.2.4  Gate Driver State Machine (TDRIVE)
            1. 7.4.5.2.4.1 tDRIVE Calculation Example
          5. 7.4.5.2.5  Propagation Delay Reduction (PDR)
          6. 7.4.5.2.6  PDR Pre-Charge/Pre-Discharge Control Loop Operation Details
          7. 7.4.5.2.7  PDR Post-Charge/Post-Discharge Control Loop Operation Details
            1. 7.4.5.2.7.1 PDR Post-Charge/Post-Discharge Setup
          8. 7.4.5.2.8  Detecting Drive and Freewheel MOSFET
          9. 7.4.5.2.9  Automatic Duty Cycle Compensation (DCC)
          10. 7.4.5.2.10 Closed Loop Slew Time Control (STC)
            1. 7.4.5.2.10.1 STC Control Loop Setup
        3. 7.4.5.3 Tripler (Double-Stage) Charge Pump
        4. 7.4.5.4 Wide Common Mode Differential Current Shunt Amplifier
        5. 7.4.5.5 Gate Driver Protection Circuits
          1. 7.4.5.5.1 MOSFET VDS Overcurrent Protection (VDS_OCP)
          2. 7.4.5.5.2 Gate Driver Fault (VGS_GDF)
          3. 7.4.5.5.3 Offline Short-circuit and Open Load Detection (OOL and OSC)
      6. 7.4.6 Sense Output (IPROPI)
      7. 7.4.7 Protection Circuits
        1. 7.4.7.1 Fault Reset (CLR_FLT)
        2. 7.4.7.2 DVDD Logic Supply Power on Reset (DVDD_POR)
        3. 7.4.7.3 PVDD Supply Undervoltage Monitor (PVDD_UV)
        4. 7.4.7.4 PVDD Supply Overvoltage Monitor (PVDD_OV)
        5. 7.4.7.5 VCP Charge Pump Undervoltage Lockout (VCP_UV)
        6. 7.4.7.6 Thermal Clusters
        7. 7.4.7.7 Watchdog Timer
        8. 7.4.7.8 Fault Detection and Response Summary Table
    5. 7.5 Programming
      1. 7.5.1 Serial Peripheral Interface (SPI)
      2. 7.5.2 SPI Format
      3. 7.5.3 Timing Diagrams
  9. 8  DRV8000-Q1 Register Map
    1. 8.1 DRV8000-Q1_STATUS Registers
    2. 8.2 DRV8000-Q1_CNFG Registers
    3. 8.3 DRV8000-Q1_CTRL Registers
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 IDRIVE Calculation Example
        2. 9.2.2.2 tDRIVE Calculation Example
        3. 9.2.2.3 Maximum PWM Switching Frequency
        4. 9.2.2.4 Current Shunt Amplifier Configuration
    3. 9.3 Initialization Setup
    4. 9.4 Power Supply Recommendations
      1. 9.4.1 Bulk Capacitance Sizing
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Pre-Production Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Package Option Addendum
    2. 12.2 Tape and Reel Information

7.1 Overview

The DRV8000-Q1 device integrates multiple types of drivers intended for multiple functions: driving and diagnosing motor (inductive), resistive and capacitive loads. The devices features two half-bridge gate drivers, 6 integrated half-bridges, 6 integrated high-side drivers, one high-side external MOSFET gate driver for heater, one high-side gate driver for electrochromic charge and one integrated low-side driver for electrochromic load discharge. Each driver features current sensing, protection and diagnostics along with system protection and diagnostics, which increases system integration and reduces total system size and cost.

The device half-bridge external MOSFET gate driver architecture automatically manages dead time to prevent shoot-through, controls slew rate to decrease electromagnetic interference (EMI), and configurable propagation delay for optimized performance. These gate drivers support input modes for independent half-bridge or H-bridge control. Two PWM inputs can be configured as polarity and drive control. The external MOSFET gate driver protection circuits include charge pump monitoring, short-circuit protection (VDS fault monitoring) and open load detection (VGS fault monitoring).

The half-bridge drivers can be controlled through SPI register or PWM pins PWM1 and IPROPI/PWM2. The half-bridges have configurable current chopping scheme called ITRIP. Protection circuits include short-circuit protection, active and passive open load detection.

The high-side drivers can be controlled through SPI register, external PWM pin (PWM1), or with a dedicated PWM generator which enables load regulation during operation. All High-side drivers also have optional constant current mode, ITRIP regulation for LED or lamp module loads. One high-side driver is configurable to drive either a lamp or LED load. Protection circuits include short-circuit protection and open load detection.

The device also has an external MOSFET drivers for resistive heating element. The heater MOSFET driver can be controlled with SPI register or with PWM pin (PWM1) and feature both short-circuit and open load detection.

There is also an electrochromic (EC) mirror driver. The EC driver is controlled only through SPI register. For EC drive, the driver control loop regulates the EC voltage to a 6-bit target voltage. To discharge the EC element or change target voltage, there is an integrated low-side MOSFET to discharge the EC element in either two discharge modes, a PWM discharge and fast discharge options. The EC driver protection includes LS overcurrent and open load detection.

IPROPI (IPROPI/PWM2) pin is a multi-purpose output pin or input PWM pin (PWM) that can provide proportional current sense from any integrated driver with current sense. IPROPI can be also configured to output PVDD motor supply monitor, internal temperature cluster monitor, or can be configured as a second PWM input option for integrated half-bridges.