SLVSH22A May 2024 – September 2025 DRV8000-Q1
PRODUCTION DATA
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Power supply pin voltage | PVDD | –0.3 | 40 | V |
| Power supply transient voltage ramp | PVDD | 2 | V/µs | |
| Digital Logic power supply voltage ramp | DVDD | 2 | V/µs | |
| Voltage difference between ground pins | GND, PGND | –0.3 | 0.3 | V |
| Charge pump pin voltage | VCP | –0.3 | PVDD + 15 | V |
| Charge pump high-side pin voltage | CP1H | VPVDD – 0.3 | VVCP + 0.3 | V |
| Charge pump high-side pin voltage | CP2H | VPVDD – 0.6 | VVCP + 0.3 | V |
| Charge pump low-side pin voltage | CP1L, CP2L | –0.3 | VPVDD + 0.3 | V |
| Digital regulator pin voltage | DVDD | –0.3 | 5.75 | V |
| Logic pin voltage | GD_INx, PWM1, IPROPI/PWM2, DRVOFF, nSLEEP, SCLK, SDI, nSCS | –0.3 | 5.75 | V |
| Output logic pin voltage | SDO | –0.3 | VDVDD + 0.3 | V |
| Output pin voltage | OUT1-OUT12 | –0.3 | VPVDD + 0.9 | V |
| Output current | OUT1-OUT12, ECFB, ECDRV | Internally Limited | Internally Limited | A |
| Heater and Electrochromic MOSFET gate drive pin voltage | GH_HS | VSH_HS – 0.3 to VSH_HS + 13 | VVCP + 0.3 | V |
| Heater and Electrochromic MOSFET source pin voltage | SH_HS, ECFB, ECDRV | –0.3 | VPVDD + 0.3 | V |
| High-side driver and Heater MOSFET source pin maximum energy dissipation, TJ = 25°C, LLOAD < 100 µH | OUT7-OUT12, SH_HS | - | 1 | mJ |
| High-side gate drive pin voltage | GHx (2) | –2 | VVCP + 0.3 | V |
| Transient 1-µs high-side gate drive pin voltage | GHx (2) | –5 | VVCP + 0.3 | V |
| High-side gate drive pin voltage with respect to SHx | GHx (2) | –0.3 | 13.5 | V |
| High-side sense pin voltage | SHx (2) | –2 | 40 | V |
| Transient 1-µs high-side sense pin voltage | SHx (2) | –5 | 40 | V |
| Low-side gate drive pin voltage | GLx (2) | –2 | 13.5 | V |
| Transient 1-µs low-side gate drive pin voltage | GLx (2) | –3 | 13.5 | V |
| Low-side gate drive pin voltage with respect to SL | GLx (2) | –0.3 | 13.5 | V |
| Low-side sense pin voltage | SL (2) | –2 | 2 | V |
| Transient 1-µs low-side sense pin voltage | SL (2) | –3 | 3 | V |
| Gate drive current | GHx, GLx | Internally Limited | Internally Limited | A |
| Amplifier input pin voltage | SN, SP | –2 | VVCP + 0.3 | V |
| Transient 1-µs amplifier input pin voltage | SN, SP | –5 | VVCP + 0.3 | V |
| Amplifier input differential voltage | SN, SP | –5.75 | 5.75 | V |
| Amplifier output pin voltage | SO | –0.3 | VDVDD + 0.3 | V |
| Ambient temperature, TA | –40 | 125 | °C | |
| Junction temperature, TJ | –40 | 150 | °C | |
| Storage temperature, Tstg | –65 | 150 | °C | |