SLVSH22A May   2024  – September 2025 DRV8000-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings Auto
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information RGZ package
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 External Components
    4. 7.4 Feature Description
      1. 7.4.1 Heater MOSFET Driver
        1. 7.4.1.1 Heater MOSFET Driver Control
        2. 7.4.1.2 Heater MOSFET Driver Protection
          1. 7.4.1.2.1 Heater SH_HS Internal Diode
          2. 7.4.1.2.2 Heater MOSFET VDS Overcurrent Protection (HEAT_VDS)
          3. 7.4.1.2.3 Heater MOSFET Open Load Detection
      2. 7.4.2 High-Side Drivers
        1. 7.4.2.1 High-side Driver Control
          1. 7.4.2.1.1 High-side Driver PWM Generator
          2. 7.4.2.1.2 Constant Current Mode
          3. 7.4.2.1.3 OUTx HS ITRIP Behavior
          4. 7.4.2.1.4 High-side Drivers - Parallel Outputs
        2. 7.4.2.2 High-side Driver Protection Circuits
          1. 7.4.2.2.1 High-side Drivers Internal Diode
          2. 7.4.2.2.2 High-side Driver Short-circuit Protection
          3. 7.4.2.2.3 High-side Driver Overcurrent Protection
          4. 7.4.2.2.4 High-side Driver Open Load Detection
      3. 7.4.3 Electrochromic Glass Driver
        1. 7.4.3.1 Electrochromic Driver Control
        2. 7.4.3.2 Electrochromic Driver Protection
      4. 7.4.4 Half-bridge Drivers
        1. 7.4.4.1 Half-bridge Control
        2. 7.4.4.2 OUT1 and OUT2 High-side Driver Mode
        3. 7.4.4.3 Half-bridge Register Control
        4. 7.4.4.4 Half-Bridge ITRIP Regulation
        5. 7.4.4.5 Half-bridge Protection and Diagnostics
          1. 7.4.4.5.1 Half-Bridge Off-State Diagnostics (OLP)
          2. 7.4.4.5.2 Half-bridge Open Load Detection
          3. 7.4.4.5.3 Half-Bridge Overcurrent Protection
      5. 7.4.5 Gate Drivers
        1. 7.4.5.1 Input PWM Modes
          1. 7.4.5.1.1 Half-Bridge Control
          2. 7.4.5.1.2 H-Bridge Control
          3. 7.4.5.1.3 DRVOFF - Gate Driver Shutoff Pin
        2. 7.4.5.2 Smart Gate Driver - Functional Block Diagram
          1. 7.4.5.2.1  Smart Gate Driver
          2. 7.4.5.2.2  Functional Block Diagram
          3. 7.4.5.2.3  Slew Rate Control (IDRIVE)
          4. 7.4.5.2.4  Gate Driver State Machine (TDRIVE)
            1. 7.4.5.2.4.1 tDRIVE Calculation Example
          5. 7.4.5.2.5  Propagation Delay Reduction (PDR)
          6. 7.4.5.2.6  PDR Pre-Charge/Pre-Discharge Control Loop Operation Details
          7. 7.4.5.2.7  PDR Post-Charge/Post-Discharge Control Loop Operation Details
            1. 7.4.5.2.7.1 PDR Post-Charge/Post-Discharge Setup
          8. 7.4.5.2.8  Detecting Drive and Freewheel MOSFET
          9. 7.4.5.2.9  Automatic Duty Cycle Compensation (DCC)
          10. 7.4.5.2.10 Closed Loop Slew Time Control (STC)
            1. 7.4.5.2.10.1 STC Control Loop Setup
        3. 7.4.5.3 Tripler (Double-Stage) Charge Pump
        4. 7.4.5.4 Wide Common Mode Differential Current Shunt Amplifier
        5. 7.4.5.5 Gate Driver Protection Circuits
          1. 7.4.5.5.1 MOSFET VDS Overcurrent Protection (VDS_OCP)
          2. 7.4.5.5.2 Gate Driver Fault (VGS_GDF)
          3. 7.4.5.5.3 Offline Short-circuit and Open Load Detection (OOL and OSC)
      6. 7.4.6 Sense Output (IPROPI)
      7. 7.4.7 Protection Circuits
        1. 7.4.7.1 Fault Reset (CLR_FLT)
        2. 7.4.7.2 DVDD Logic Supply Power on Reset (DVDD_POR)
        3. 7.4.7.3 PVDD Supply Undervoltage Monitor (PVDD_UV)
        4. 7.4.7.4 PVDD Supply Overvoltage Monitor (PVDD_OV)
        5. 7.4.7.5 VCP Charge Pump Undervoltage Lockout (VCP_UV)
        6. 7.4.7.6 Thermal Clusters
        7. 7.4.7.7 Watchdog Timer
        8. 7.4.7.8 Fault Detection and Response Summary Table
    5. 7.5 Programming
      1. 7.5.1 Serial Peripheral Interface (SPI)
      2. 7.5.2 SPI Format
      3. 7.5.3 Timing Diagrams
  9. 8  DRV8000-Q1 Register Map
    1. 8.1 DRV8000-Q1_STATUS Registers
    2. 8.2 DRV8000-Q1_CNFG Registers
    3. 8.3 DRV8000-Q1_CTRL Registers
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 IDRIVE Calculation Example
        2. 9.2.2.2 tDRIVE Calculation Example
        3. 9.2.2.3 Maximum PWM Switching Frequency
        4. 9.2.2.4 Current Shunt Amplifier Configuration
    3. 9.3 Initialization Setup
    4. 9.4 Power Supply Recommendations
      1. 9.4.1 Bulk Capacitance Sizing
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Pre-Production Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Package Option Addendum
    2. 12.2 Tape and Reel Information

7.4.5.3 Tripler (Double-Stage) Charge Pump

The high-side gate drive voltage for the external MOSFET is generated using a tripler (dual-stage) charge pump that operates from the PVDD voltage supply input. The charge pump allows the high-side and low-side gate drivers to properly bias the external N-channel MOSFETs with respect to the source voltage across a wide input supply voltage range. The charge pump output is regulated (VVCP) to maintain a fixed voltage respect to VPVDD. The charge pump is continuously monitored for an undervoltage (VCP_UV) event to prevent under driven MOSFET conditions or in case of a short-circuit condition.

The charge pump provides several configuration options. By default the charge pump automatically switches between tripler (dual-stage) mode and doubler (single-stage) mode after the PVDD pin voltage crosses the VCP_SO threshold to reduce power dissipation. The charge pump can also be configured to always remain in tripler or doubler mode through the SPI register setting CP_MODE.

The charge pumps requires a low ESR, 1µF, 16V ceramic capacitor (X7R recommended) between the PVDD and VCP pins to act as the storage capacitor. Additionally, a low ESR, 100nF, PVDD-rated ceramic capacitor (X7R recommended) is required between the CP1H to CP1L and CP2H to CP2L pins to act as the flying capacitors.

Note:

Since the charge pump is regulated to the PVDD pin, verify that the voltage difference between the PVDD pin and MOSFET power supply is limited to a threshold that allows for proper VGS of the external MOSFET during switching operation.