TIDUE53J March   2018  – February 2025 TMS320F28P550SG , TMS320F28P550SJ , TMS320F28P559SG-Q1 , TMS320F28P559SJ-Q1

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Key System Specifications
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Highlighted Products
      1. 2.2.1  UCC21710
      2. 2.2.2  UCC5350
      3. 2.2.3  TMS320F28379D
      4. 2.2.4  AMC3306M05
      5. 2.2.5  OPA4388
      6. 2.2.6  TMCS1123
      7. 2.2.7  AMC0330R
      8. 2.2.8  AMC0381D
      9. 2.2.9  UCC14341
      10. 2.2.10 UCC33421
    3. 2.3 System Design Theory
      1. 2.3.1 Three-Phase T-Type Inverter
        1. 2.3.1.1 Architecture Overview
        2. 2.3.1.2 LCL Filter Design
        3. 2.3.1.3 Inductor Design
        4. 2.3.1.4 SiC MOSFETs Selection
        5. 2.3.1.5 Loss Estimations
      2. 2.3.2 Voltage Sensing
      3. 2.3.3 Current Sensing
      4. 2.3.4 System Auxiliary Power Supply
      5. 2.3.5 Gate Drivers
        1. 2.3.5.1 1200-V SiC MOSFETs
        2. 2.3.5.2 650-V SiC MOSFETs
        3. 2.3.5.3 Gate Driver Bias Supply
      6. 2.3.6 Control Design
        1. 2.3.6.1 Current Loop Design
        2. 2.3.6.2 PFC DC Bus Voltage Regulation Loop Design
  9. 3Hardware, Software, Testing Requirements, and Test Results
    1. 3.1 Required Hardware and Software
      1. 3.1.1 Hardware
        1. 3.1.1.1 Test Hardware Required
        2. 3.1.1.2 Microcontroller Resources Used on the Design (TMS320F28379D)
        3. 3.1.1.3 F28377D, F28379D Control-Card Settings
        4. 3.1.1.4 Microcontroller Resources Used on the Design (TMS320F280039C)
      2. 3.1.2 Software
        1. 3.1.2.1 Getting Started With Firmware
          1. 3.1.2.1.1 Opening the CCS project
          2. 3.1.2.1.2 Digital Power SDK Software Architecture
          3. 3.1.2.1.3 Interrupts and Lab Structure
          4. 3.1.2.1.4 Building, Loading, and Debugging the Firmware
          5. 3.1.2.1.5 CPU Loading
        2. 3.1.2.2 Protection Scheme
        3. 3.1.2.3 PWM Switching Scheme
        4. 3.1.2.4 ADC Loading
    2. 3.2 Testing and Results
      1. 3.2.1 Lab 1
      2. 3.2.2 Testing Inverter Operation
        1. 3.2.2.1 Lab 2
        2. 3.2.2.2 Lab 3
        3. 3.2.2.3 Lab 4
      3. 3.2.3 Testing PFC Operation
        1. 3.2.3.1 Lab 5
        2. 3.2.3.2 Lab 6
        3. 3.2.3.3 Lab 7
      4. 3.2.4 Test Setup for Efficiency
      5. 3.2.5 Test Results
        1. 3.2.5.1 PFC Mode
          1. 3.2.5.1.1 PFC Start-Up – 230 VRMS, 400 VL-L AC Voltage
          2. 3.2.5.1.2 Steady State Results - PFC Mode
          3. 3.2.5.1.3 Efficiency, THD, and Power Factor Results, 60 Hz – PFC Mode
          4. 3.2.5.1.4 Transient Test With Step Load Change
        2. 3.2.5.2 Inverter Mode
  10. 4Design Files
    1. 4.1 Schematics
    2. 4.2 Bill of Materials
    3. 4.3 PCB Layout Recommendations
      1. 4.3.1 Layout Prints
    4. 4.4 Altium Project
    5. 4.5 Gerber Files
    6. 4.6 Assembly Drawings
  11. 5Trademarks
  12. 6About the Authors
  13. 7Revision History

UCC5350

The UCC53x0 is a family of compact, single-channel, isolated IGBT, SiC, and MOSFET gate drivers with best-in-class isolation ratings and variants for pinout configuration and drive strength.

The UCC53x0 is available in an 8-pin SOIC (DWV) package. This package has a creepage and clearance of 8.5 mm and can support isolation voltage up to 5 kVRMS, which is good for applications where reinforced isolation is needed. With these various options and wide power range, the UCC53x0 family is a good fit for motor drives and industrial power supplies.

  • 3-V to 15-V input supply voltage
  • 13.2-V to 33-V output driver supply voltage
  • Feature options:
    • Split outputs (UCC5320S and UCC5390S)
    • UVLO with respect to MOSFET collector (UCC5320E and UCC5390E)
    • Miller clamp option (UCC5310M and UCC5350M)
  • Negative 5-V handling capability on input pins
  • 60-ns (typical) propagation delay for UCC5320S, UCC5320E, and UCC5310M
  • 100-kV/µs minimum CMTI
  • Isolation surge withstand voltage: 4242 VPK
  • Safety-related certifications:
    • 4242-VPK isolation per DIN V VDE V 0884-10 and DIN EN 61010-1 (planned)
    • 3000-VRMS isolation for 1 minute per UL 1577 (planned)
    • CSA Component Acceptance Notice 5A, IEC 60950-1 and IEC 61010-1 End Equipment Standards (Planned)
    • CQC Certification per GB4943.1-2011 (Planned)
  • 4-kV ESD on all pins
  • CMOS inputs
  • 8-pin narrow body SOIC package
  • Operating temperature: –40°C to +125°C ambient