TIDUE53J March   2018  – February 2025 TMS320F28P550SG , TMS320F28P550SJ , TMS320F28P559SG-Q1 , TMS320F28P559SJ-Q1

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Key System Specifications
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Highlighted Products
      1. 2.2.1  UCC21710
      2. 2.2.2  UCC5350
      3. 2.2.3  TMS320F28379D
      4. 2.2.4  AMC3306M05
      5. 2.2.5  OPA4388
      6. 2.2.6  TMCS1123
      7. 2.2.7  AMC0330R
      8. 2.2.8  AMC0381D
      9. 2.2.9  UCC14341
      10. 2.2.10 UCC33421
    3. 2.3 System Design Theory
      1. 2.3.1 Three-Phase T-Type Inverter
        1. 2.3.1.1 Architecture Overview
        2. 2.3.1.2 LCL Filter Design
        3. 2.3.1.3 Inductor Design
        4. 2.3.1.4 SiC MOSFETs Selection
        5. 2.3.1.5 Loss Estimations
      2. 2.3.2 Voltage Sensing
      3. 2.3.3 Current Sensing
      4. 2.3.4 System Auxiliary Power Supply
      5. 2.3.5 Gate Drivers
        1. 2.3.5.1 1200-V SiC MOSFETs
        2. 2.3.5.2 650-V SiC MOSFETs
        3. 2.3.5.3 Gate Driver Bias Supply
      6. 2.3.6 Control Design
        1. 2.3.6.1 Current Loop Design
        2. 2.3.6.2 PFC DC Bus Voltage Regulation Loop Design
  9. 3Hardware, Software, Testing Requirements, and Test Results
    1. 3.1 Required Hardware and Software
      1. 3.1.1 Hardware
        1. 3.1.1.1 Test Hardware Required
        2. 3.1.1.2 Microcontroller Resources Used on the Design (TMS320F28379D)
        3. 3.1.1.3 F28377D, F28379D Control-Card Settings
        4. 3.1.1.4 Microcontroller Resources Used on the Design (TMS320F280039C)
      2. 3.1.2 Software
        1. 3.1.2.1 Getting Started With Firmware
          1. 3.1.2.1.1 Opening the CCS project
          2. 3.1.2.1.2 Digital Power SDK Software Architecture
          3. 3.1.2.1.3 Interrupts and Lab Structure
          4. 3.1.2.1.4 Building, Loading, and Debugging the Firmware
          5. 3.1.2.1.5 CPU Loading
        2. 3.1.2.2 Protection Scheme
        3. 3.1.2.3 PWM Switching Scheme
        4. 3.1.2.4 ADC Loading
    2. 3.2 Testing and Results
      1. 3.2.1 Lab 1
      2. 3.2.2 Testing Inverter Operation
        1. 3.2.2.1 Lab 2
        2. 3.2.2.2 Lab 3
        3. 3.2.2.3 Lab 4
      3. 3.2.3 Testing PFC Operation
        1. 3.2.3.1 Lab 5
        2. 3.2.3.2 Lab 6
        3. 3.2.3.3 Lab 7
      4. 3.2.4 Test Setup for Efficiency
      5. 3.2.5 Test Results
        1. 3.2.5.1 PFC Mode
          1. 3.2.5.1.1 PFC Start-Up – 230 VRMS, 400 VL-L AC Voltage
          2. 3.2.5.1.2 Steady State Results - PFC Mode
          3. 3.2.5.1.3 Efficiency, THD, and Power Factor Results, 60 Hz – PFC Mode
          4. 3.2.5.1.4 Transient Test With Step Load Change
        2. 3.2.5.2 Inverter Mode
  10. 4Design Files
    1. 4.1 Schematics
    2. 4.2 Bill of Materials
    3. 4.3 PCB Layout Recommendations
      1. 4.3.1 Layout Prints
    4. 4.4 Altium Project
    5. 4.5 Gerber Files
    6. 4.6 Assembly Drawings
  11. 5Trademarks
  12. 6About the Authors
  13. 7Revision History

2.3.5.2 650-V SiC MOSFETs

The UCC5350 primary side is powered by a 3.3-V rail. A 0.1-µF ceramic capacitor is placed close to the VCC1 pin for noise decoupling. The positive-going UVLO threshold on the supply is 2.6 V and the negative-going threshold is 2.5 V.

The PWM input to the gate driver is provided by the controller PWM output peripheral. Dead time must be inserted between the low-side and high-side PWM signals to prevent both switches turning on at the same time. The signal is single ended and is filtered by RC low-pass filter before connecting to the gate driver input. The filter attenuates high-frequency noise and prevents overshoot and undershoot on the PWM inputs due to longer tracks from the controller to the gate driver. The inverting PWM input IN– is not used in the design and is connected to primary side ground.

A 3.3-Ω gate resistor (for example, R258) is used for MOSFETs turn-on and turn-off. A 10-kΩ resistor (for example, R85) is connected across the MOSFET gate to collector pins close to the MOSFET on the main power board. This connection makes sure that the MOSFET remains in the off state in case the gate driver gets disconnected from the MOSFET due to faults.