TIDUE53J March   2018  – February 2025 TMS320F28P550SG , TMS320F28P550SJ , TMS320F28P559SG-Q1 , TMS320F28P559SJ-Q1

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Key System Specifications
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Highlighted Products
      1. 2.2.1  UCC21710
      2. 2.2.2  UCC5350
      3. 2.2.3  TMS320F28379D
      4. 2.2.4  AMC3306M05
      5. 2.2.5  OPA4388
      6. 2.2.6  TMCS1123
      7. 2.2.7  AMC0330R
      8. 2.2.8  AMC0381D
      9. 2.2.9  UCC14341
      10. 2.2.10 UCC33421
    3. 2.3 System Design Theory
      1. 2.3.1 Three-Phase T-Type Inverter
        1. 2.3.1.1 Architecture Overview
        2. 2.3.1.2 LCL Filter Design
        3. 2.3.1.3 Inductor Design
        4. 2.3.1.4 SiC MOSFETs Selection
        5. 2.3.1.5 Loss Estimations
      2. 2.3.2 Voltage Sensing
      3. 2.3.3 Current Sensing
      4. 2.3.4 System Auxiliary Power Supply
      5. 2.3.5 Gate Drivers
        1. 2.3.5.1 1200-V SiC MOSFETs
        2. 2.3.5.2 650-V SiC MOSFETs
        3. 2.3.5.3 Gate Driver Bias Supply
      6. 2.3.6 Control Design
        1. 2.3.6.1 Current Loop Design
        2. 2.3.6.2 PFC DC Bus Voltage Regulation Loop Design
  9. 3Hardware, Software, Testing Requirements, and Test Results
    1. 3.1 Required Hardware and Software
      1. 3.1.1 Hardware
        1. 3.1.1.1 Test Hardware Required
        2. 3.1.1.2 Microcontroller Resources Used on the Design (TMS320F28379D)
        3. 3.1.1.3 F28377D, F28379D Control-Card Settings
        4. 3.1.1.4 Microcontroller Resources Used on the Design (TMS320F280039C)
      2. 3.1.2 Software
        1. 3.1.2.1 Getting Started With Firmware
          1. 3.1.2.1.1 Opening the CCS project
          2. 3.1.2.1.2 Digital Power SDK Software Architecture
          3. 3.1.2.1.3 Interrupts and Lab Structure
          4. 3.1.2.1.4 Building, Loading, and Debugging the Firmware
          5. 3.1.2.1.5 CPU Loading
        2. 3.1.2.2 Protection Scheme
        3. 3.1.2.3 PWM Switching Scheme
        4. 3.1.2.4 ADC Loading
    2. 3.2 Testing and Results
      1. 3.2.1 Lab 1
      2. 3.2.2 Testing Inverter Operation
        1. 3.2.2.1 Lab 2
        2. 3.2.2.2 Lab 3
        3. 3.2.2.3 Lab 4
      3. 3.2.3 Testing PFC Operation
        1. 3.2.3.1 Lab 5
        2. 3.2.3.2 Lab 6
        3. 3.2.3.3 Lab 7
      4. 3.2.4 Test Setup for Efficiency
      5. 3.2.5 Test Results
        1. 3.2.5.1 PFC Mode
          1. 3.2.5.1.1 PFC Start-Up – 230 VRMS, 400 VL-L AC Voltage
          2. 3.2.5.1.2 Steady State Results - PFC Mode
          3. 3.2.5.1.3 Efficiency, THD, and Power Factor Results, 60 Hz – PFC Mode
          4. 3.2.5.1.4 Transient Test With Step Load Change
        2. 3.2.5.2 Inverter Mode
  10. 4Design Files
    1. 4.1 Schematics
    2. 4.2 Bill of Materials
    3. 4.3 PCB Layout Recommendations
      1. 4.3.1 Layout Prints
    4. 4.4 Altium Project
    5. 4.5 Gerber Files
    6. 4.6 Assembly Drawings
  11. 5Trademarks
  12. 6About the Authors
  13. 7Revision History

2.3.5.1 1200-V SiC MOSFETs

VCC and GND are the supply pins for the input side of the UCC21710 device. The supply voltage at VCC can range from 3.0 V to 5.5 V with respect to GND. VDD and COM are the supply pins for the output side of the UCC21710 device. VEE is the supply return for the output driver and COM is the reference for the logic circuitry. The supply voltage at VDD can range from 15 V up to 30 V with respect to VEE. The PWM is applied across the IN+ and IN– pins of the gate driver.

On the secondary-side of the gate driver, gate resistors (for example, R203 and R204) control the gate current of the switching device. The DESAT fault detection prevents any destruction resulting from excessive collector currents during a short-circuit fault. To prevent damage to the switching device, the UCC21710 slowly turns off the SiC MOSFET in the event of a fault detection. A slow turnoff makes sure the overcurrent is reduced in a controlled manner during the fault condition. The DESAT diode (for example, D10) conducts the bias current from the gate driver, which allows sensing of the MOSFET-saturated collector-to-emitter voltage when the SiC MOSFET is in the ON condition.