DRV8436E

• Dual H-bridge motor driver
  • One bipolar stepper motor
  • Dual brushed-DC motors
• Integrated current sense functionality
  • No sense resistors required
  • ±7.5% Full-scale current accuracy
• 4.5- to 48-V Operating supply voltage range
• Multiple control interface options
  • PHASE/ENABLE
  • PWM
• Smart tune decay technology, fixed slow and mixed decay options
• Low R_DS(ON):
  • 900 mΩ HS + LS at 24 V, 25°C (DRV8436E/P)
  • 1200 mΩ HS + LS at 24 V, 25°C (DRV8437E/P)
• High Current Capacity Per Bridge
  • DRV8436E/P: 2.5-A peak, 1.5-A Full-Scale, 1.1-A rms
  • DRV8437E/P: 1.9-A peak, 1.1-A Full-Scale, 0.8-A rms
• Configurable Off-Time PWM Chopping
  • 7, 16, 24 or 32 µs
• Supports 1.8-V, 3.3-V, 5.0-V logic inputs
• Low-current sleep mode (2 µA)
• Small package and footprint
• Protection features
  • VM undervoltage lockout (UVLO)
  • Charge pump undervoltage (CPUV)
  • Overcurrent protection (OCP)
  • Thermal shutdown (OTSD)
  • Fault condition output (nFAULT)

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The DRV8436E/P, DRV8437E/P devices are dual H-bridge motor drivers for industrial applications. The devices can be used for driving two DC motors, or a bipolar stepper motor. The output stage of the driver consists of N-channel power MOSFETs configured as two full H-bridges. The DRV8436E/P is capable of driving up to 1.5-A full scale or 1.1-A rms output current per H-bridge; and the DRV8437E/P is capable of driving up to 1.1-A full scale or 0.8-A rms output current per H-bridge (dependent on PCB design).

The devices use an internal current sense architecture to eliminate the need for two external power sense resistors, saving PCB area and system cost. The devices use an internal PWM current regulation scheme selectable between smart tune, fast, slow and mixed decay options. Smart tune decay technology automatically adjusts for optimal current regulation performance and compensates for motor variation and aging effects.

The PH/EN (DRV8436E/DRV8437E) or PWM (DRV8436P/DRV8437P) pins provide a simple control interface. A low-power sleep mode is provided for very-low quiescent current standby using a dedicated nSLEEP pin. Device protection features are provided for supply undervoltage, charge pump faults, overcurrent, short circuits and overtemperature. Fault conditions are indicated by the nFAULT pin.