Packaging information
Package | Pins HSOIC (DDA) | 8 |
Operating temperature range (°C) -40 to 125 |
Package qty | Carrier 2,500 | LARGE T&R |
Features for the TPS5450-Q1
- Qualified for Automotive Applications
- Wide Input Voltage Range: 5.5 V to 36 V
- Up to 5-A Continuous (6-A Peak) Output Current
- High Efficiency Greater than 90% Enabled by 110-mΩ Integrated MOSFET Switch
- Wide Output Voltage Range: Adjustable Down to 1.22 V with 1.5% Initial Accuracy
- Internal Compensation Minimizes External Parts Count
- Fixed 500-kHz Switching Frequency for Small Filter Size
- 18-µA Shutdown Supply Current
- Improved Line Regulation and Transient Response by Input Voltage Feed Forward
- System Protected by Overcurrent Limiting, Overvoltage Protection, and Thermal Shutdown
- –40°C to 125°C Operating Junction Temperature Range
- Available in Small Thermally Enhanced 8-Pin SOIC PowerPAD™ Package
- Create a custom design using the TPS5450-Q1 with the WEBENCH® Power Designer
Description for the TPS5450-Q1
The TPS5450-Q1 is a high-output-current PWM converter that integrates a low-resistance high-side N-channel MOSFET. Included on the substrate with the listed features are a high-performance voltage error amplifier that provides tight voltage regulation accuracy under transient conditions, an undervoltage-lockout circuit to prevent start-up until the input voltage reaches 5.5 V, an internally set slow-start circuit to limit inrush currents, and a voltage feedforward circuit to improve the transient response. Using the ENA pin, shutdown supply current is reduced to 18 µA typically. Other features include an active-high enable, overcurrent limiting, overvoltage protection, and thermal shutdown. To reduce design complexity and external component count, the TPS5450-Q1 feedback loop is internally compensated.
The TPS5450-Q1 device is available in a thermally enhanced, 8-pin SOIC PowerPAD™ package. TI provides evaluation modules and software tools to aid in achieving high-performance power supply designs to meet aggressive equipment development cycles.