Delivering low gate charge and resistance for fast switching transistors
NexFET™ power MOSFETs offer a wide range of n-channel and p-channel discrete and module solutions enabling higher efficiencies, higher power density or frequency and reduced time to market.
We offer robust n-channel devices with class leading resistance and gate charge enabling high frequency operation and higher power density.
Our p-channel devices deliver industry best power density and smallest footprints as well as easy to drive low gate charge.
Power stage combines integrated driver IC, optimized control and synchronous FETs while leveraging PowerStack™ packing technology to eliminate parasitics, reduce switching losses and achieve the highest efficiencies possible.
Power blocks combine optimized control and synchronous FETs while leveraging PowerStack™ packing technology to eliminate parasitics and achieve high efficiency and switching frequencies.
MOSFET technical articles
|What does a “lead-free” power MOSFET really mean?||Learn about the nuances in the termninology "lead free" and what you should actually be looking for.|
|Choosing the right SOA for your design: discrete FETs vs. power blocks||Learn the differences in how TI specifies SOA for single, discrete FETs vs. integrated power blocks.|
|FemtoFET™ MOSFETs: small as sand but it’s all about that pitch||Learn about the key benefits of our small FemtoFET™ MOSFETs.|
|Improve the performance of your power tool design with power blocks||Learn how a MOSFET power block helps to achieve a more reliable, smaller-sized, efficient and cost-competitive system solution.|
|MOSFET pair the size of a flake of pepper?||Learn how ultra-thin Power Block II devices allow products to become dense, while consuming less power and dissipating less heat.|
|Selecting the right power MOSFET/power block package for your application||Learn about package thermal capability and power dissipation in TI MOSFET and power block packages.|
|See all technical documents|