Delivering low gate charge and resistance for fast switching transistors
NexFET™ power MOSFETs offer a wide range of n-channel and p-channel discrete and module solutions enabling higher efficiencies, higher power density or frequency and reduced time to market.
TI offers robust n-channel devices with class leading resistance and gate charge enabling high frequency operation and higher power density.
TI's p-channel devices deliver industry best power density and smallest footprints as well as easy to drive low gate charge.
Power Stage combines integrated driver IC, optimized control and synchronous FETs while leveraging PowerStack™ technology to eliminate parasitics, reduce switching losses and achieve the highest efficiencies possible.