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The BUF08630 offers eight programmable gamma channels and one programmable VCOM channel.
The final gamma and VCOM values can be stored in the on-chip, nonvolatile memory. To allow for programming errors or liquid crystal display (LCD) panel rework, the BUF08630 supports up to 16 write operations to the on-chip memory.
The BUF08630 has two separate memory banks, allowing simultaneous storage of two different gamma curves to facilitate switching between gamma curves.
All gamma and VCOM channels offer a rail-to-rail output that typically swings to within 150 mV of either supply rail with a 10-mA load. All channels are programmed using a two-wire interface that supports standard operations up to 400 kHz, and high-speed data transfers up to 3.4 MHz.
The BUF08630 is manufactured using Texas Instruments’ proprietary, state-of-the-art, high-voltage CMOS process. This process offers very dense logic and high supply voltage operation of up to 20V. The BUF08630 is available in a 20-pin QFN package, and is specified from –40°C to +95°C.
| Top-Dokumentation | Typ | Titel | Format-Optionen | Neueste englische Version herunterladen | Datum |
|---|---|---|---|---|---|
| * | Datenblatt | Programmable Gamma-Voltage Generator w/Adjustable Gain Vcom & 1/2 AVDD Topology datasheet (Rev. A) | 13.08.2012 | ||
| Anwendungshinweis | Driving Capacitive Loads with Gamma Buffers | 20.11.2012 |
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| Gehäuse | Pins | CAD-Symbole, Footprints und 3D-Modelle |
|---|---|---|
| VQFN (RGW) | 20 | Ultra Librarian |
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