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DRV8350

AKTIV

3-phasiger intelligenter Gate-Treiber, max. 102 V

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Datenblatt

DRV8350

AKTIV
Datenblatt Jetzt bestellen

Produktdetails

Rating Catalog Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 9 Vs ABS (max) (V) 102 Features Hardware Management I/F, SPI/I2C, Smart Gate Drive Operating temperature range (°C) -40 to 125
Rating Catalog Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 9 Vs ABS (max) (V) 102 Features Hardware Management I/F, SPI/I2C, Smart Gate Drive Operating temperature range (°C) -40 to 125
WQFN (RTV) 32 25 mm² 5 x 5
  • 9 to 100-V, Triple half-bridge gate driver
    • Optional integrated buck regulator
    • Optional triple low-side current shunt amplifiers
  • Smart gate drive architecture
    • Adjustable slew rate control for EMI performance
    • VGS handshake and minimum dead-time insertion to prevent shoot-through
    • 50-mA to 1-A peak source current
    • 100-mA to 2-A peak sink current
    • dV/dt mitigation through strong pulldown
  • Integrated gate driver power supplies
    • High-side doubler charge pump For 100% PWM duty cycle control
    • Low-side linear regulator
  • Integrated LM5008A buck regulator
    • 6 to 95-V operating voltage range
    • 2.5 to 75-V, 350-mA output capability
  • Integrated triple current shunt amplifiers
    • Adjustable gain (5, 10, 20, 40 V/V)
    • Bidirectional or unidirectional support
  • 6x, 3x, 1x, and independent PWM modes
    • Supports 120° sensored operation
  • SPI or hardware interface available
  • Low-power sleep mode (20 µA at VVM = 48-V)
  • Integrated protection features
    • VM undervoltage lockout (UVLO)
    • Gate drive supply undervoltage (GDUV)
    • MOSFET VDS overcurrent protection (OCP)
    • MOSFET shoot-through prevention
    • Gate driver fault (GDF)
    • Thermal warning and shutdown (OTW/OTSD)
    • Fault condition indicator (nFAULT)
  • 9 to 100-V, Triple half-bridge gate driver
    • Optional integrated buck regulator
    • Optional triple low-side current shunt amplifiers
  • Smart gate drive architecture
    • Adjustable slew rate control for EMI performance
    • VGS handshake and minimum dead-time insertion to prevent shoot-through
    • 50-mA to 1-A peak source current
    • 100-mA to 2-A peak sink current
    • dV/dt mitigation through strong pulldown
  • Integrated gate driver power supplies
    • High-side doubler charge pump For 100% PWM duty cycle control
    • Low-side linear regulator
  • Integrated LM5008A buck regulator
    • 6 to 95-V operating voltage range
    • 2.5 to 75-V, 350-mA output capability
  • Integrated triple current shunt amplifiers
    • Adjustable gain (5, 10, 20, 40 V/V)
    • Bidirectional or unidirectional support
  • 6x, 3x, 1x, and independent PWM modes
    • Supports 120° sensored operation
  • SPI or hardware interface available
  • Low-power sleep mode (20 µA at VVM = 48-V)
  • Integrated protection features
    • VM undervoltage lockout (UVLO)
    • Gate drive supply undervoltage (GDUV)
    • MOSFET VDS overcurrent protection (OCP)
    • MOSFET shoot-through prevention
    • Gate driver fault (GDF)
    • Thermal warning and shutdown (OTW/OTSD)
    • Fault condition indicator (nFAULT)

The DRV835x family of devices are highly-integrated gate drivers for three-phase brushless DC (BLDC) motor applications. These applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal current control of BLDC motors. The device variants provide optional integrated current shunt amplifiers to support different motor control schemes and a buck regulator to power the gate driver or external controller.

The DRV835x uses smart gate drive (SGD) architecture to decrease the number of external components that are typically necessary for MOSFET slew rate control and protection circuits. The SGD architecture also optimizes dead time to prevent shoot-through conditions, provides flexibility in decreasing electromagnetic interference (EMI) by MOSFET slew rate control, and protects against gate short circuit conditions through VGS monitors. A strong gate pulldown circuit helps prevent unwanted dV/dt parasitic gate turn on events

Various PWM control modes (6x, 3x, 1x, and independent) are supported for simple interfacing to the external controller. These modes can decrease the number of outputs required of the controller for the motor driver PWM control signals. This family of devices also includes 1x PWM mode for simple sensored trapezoidal control of a BLDC motor by using an internal block commutation table.

The DRV835x family of devices are highly-integrated gate drivers for three-phase brushless DC (BLDC) motor applications. These applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal current control of BLDC motors. The device variants provide optional integrated current shunt amplifiers to support different motor control schemes and a buck regulator to power the gate driver or external controller.

The DRV835x uses smart gate drive (SGD) architecture to decrease the number of external components that are typically necessary for MOSFET slew rate control and protection circuits. The SGD architecture also optimizes dead time to prevent shoot-through conditions, provides flexibility in decreasing electromagnetic interference (EMI) by MOSFET slew rate control, and protects against gate short circuit conditions through VGS monitors. A strong gate pulldown circuit helps prevent unwanted dV/dt parasitic gate turn on events

Various PWM control modes (6x, 3x, 1x, and independent) are supported for simple interfacing to the external controller. These modes can decrease the number of outputs required of the controller for the motor driver PWM control signals. This family of devices also includes 1x PWM mode for simple sensored trapezoidal control of a BLDC motor by using an internal block commutation table.
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Technische Dokumentation

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Typ Titel Datum
* Data sheet DRV835x 100-V Three-Phase Smart Gate Driver datasheet (Rev. A) PDF | HTML 24 Jun 2019
Application note Best Practices for Board Layout of Motor Drivers (Rev. B) PDF | HTML 14 Okt 2021
Application note Hardware Design Considerations for an Electric Bicycle using BLDC Motor (Rev. B) 23 Jun 2021
Application note System Design Considerations for High-Power Motor Driver Applications PDF | HTML 22 Jun 2021
Application brief MSP430 and DRV83xx Selection Guide for Power Tools (Rev. A) PDF | HTML 14 Jun 2021
Application brief Brushless-DC Made Simple – Sensored Motor Control (Rev. B) PDF | HTML 13 Apr 2021
Application note Understanding Smart Gate Drive (Rev. D) 01 Mär 2021
Technical article A basic brushless gate driver design – part 3: integrated vs. discrete half bridge PDF | HTML 16 Dez 2020
Technical article Anything but discrete: How to simplify 48-V to 60-V DC-fed three-phase inverter de PDF | HTML 01 Feb 2019
Application brief Low Voltage Motor Drive Operation With Smart Gate Drive 20 Dez 2018
EVM User's guide DRV8350x-EVM User’s Guide (Rev. A) 19 Dez 2018
Application brief DRV835x Split Supply Power Topology 26 Sep 2018
Application note Architecture for Brushless-DC Gate Drive Systems (Rev. A) 22 Aug 2018
Application brief Field Oriented Control Made Easy for Brushless DC Motors Using Smart Gate Drive (Rev. B) 22 Aug 2018
Application note Cut-Off Switch in High-Current Motor-Drive Applications (Rev. A) 20 Aug 2018
User guide DRV8350x-EVM GUI User’s Guide 10 Jul 2017
EVM User's guide DRV8350x-EVM Sensored Software User's Guide 10 Jul 2017
EVM User's guide DRV8350x-EVM Sensorless Software User's Guide 10 Jul 2017

Design und Entwicklung

Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.

Evaluierungsplatine

DRV8350H-EVM — DRV8350H-Evaluierungsmodul für dreiphasigen Smart-Gate-Treiber

The DRV8350H-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8350H gate driver and CSD19532Q5B NexFET™ power blocks. 

The module has individual DC bus and phase voltage sense as well as an external, individual low-side current shunt amplifier, making this evaluation module ideal for (...)

Benutzerhandbuch: PDF
Nicht verfügbar auf TI.com
Evaluierungsplatine

DRV8350S-EVM — DRV8350S-Evaluierungsmodul für dreiphasigen Smart-Gate-Treiber

The DRV8350S-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8350S gate driver and CSD19532Q5B NexFET™ power blocks. 

The module has individual DC bus and phase voltage sense as well as an external, individual low-side current shunt amplifier, making this evaluation module ideal for (...)

Benutzerhandbuch: PDF
Nicht verfügbar auf TI.com
Berechnungstool

BLDC-MAX-QG-MOSFET-CALCULATOR — Calculate the maximum QG MOSFET for your motor driver

Calculate the maximum QG MOSFET that can be driven based on the PWM switching frequency, algorithm type, and additional external capacitance.
Unterstützte Produkte und Hardware

Unterstützte Produkte und Hardware

Produkte
BLDC-Treiber
DRV8320 — 3-phasiger intelligenter Gate-Treiber, max. 65 V DRV8320R — Maximal dreiphasiger intelligenter Gate-Treiber für 65 V mit Abwärtsregler DRV8323 — 3-phasiger intelligenter Gate-Treiber, max. 65 V, mit Strom-Shunt-Verstärkern DRV8323R — Maximal dreiphasiger intelligenter Gate-Treiber für 65 V mit Abwärtsregler und Strom-Shunt-Verstärke DRV8329 — Dreiphasiger intelligenter Gate-Treiber, 60 V, 1000/2000 mA mit einzelnem Strommessverstärker DRV8334 — 3-Phasen-Gate-Treiber, 60 V, 1000 mA bis 2000 mA, mit genauer Strommessung DRV8340-Q1 — 12-bis-24-V-Batterie-3-Phasen-Smart-Gate-Treiber DRV8343-Q1 — 12-bis-24-V-Batterie-3-Phasen-Smart-Gate-Treiber mit Strom-Shunt-Verstärkern für die Automobilind DRV8350 — 3-phasiger intelligenter Gate-Treiber, max. 102 V DRV8350F — 102-V max. 3-phasiger Smart Gate-Treiber, qualifiziert für Funktionssicherheitsapplikationen DRV8350R — Maximal 3-phasiger intelligenter Gate-Treiber, 102 V, mit Abwärtsregler DRV8353 — 3-phasiger intelligenter Gate-Treiber, max. 102 V, mit Strom-Shunt-Verstärkern DRV8353F — 102-V max. 3-phasiger Smart Gate-Treiber mit 3x CSA, qualifiziert für Funktionssicherheitsapplikatio DRV8353M — Maximal 3-phasiger intelligenter Gate-Treiber, 102 V, mit Strom-Shunt-Verstärkern und erweitertem Te DRV8353R — Maximal dreiphasiger intelligenter Gate-Treiber für 102 V mit Abwärtsregler und Strom-Shunt-Verstärk
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Bestellen & Qualität

Beinhaltete Information:
  • RoHS
  • REACH
  • Bausteinkennzeichnung
  • Blei-Finish/Ball-Material
  • MSL-Rating / Spitzenrückfluss
  • MTBF-/FIT-Schätzungen
  • Materialinhalt
  • Qualifikationszusammenfassung
  • Kontinuierliches Zuverlässigkeitsmonitoring
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  • Montagestandort

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