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DRV8353

AKTIV

3-phasiger intelligenter Gate-Treiber, max. 102 V, Strom-Shunt-Verstärker

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Datenblatt

DRV8353

AKTIV
Datenblatt Jetzt bestellen

Produktdetails

Rating Catalog Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 9 Vs ABS (max) (V) 102 Features Current sense Amplifier, Hardware Management I/F, SPI/I2C, Smart Gate Drive Operating temperature range (°C) -40 to 125
Rating Catalog Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 9 Vs ABS (max) (V) 102 Features Current sense Amplifier, Hardware Management I/F, SPI/I2C, Smart Gate Drive Operating temperature range (°C) -40 to 125
WQFN (RTA) 40 36 mm² 6 x 6
  • 9 to 100-V, Triple half-bridge gate driver
    • Optional integrated buck regulator
    • Optional triple low-side current shunt amplifiers
  • Smart gate drive architecture
    • Adjustable slew rate control for EMI performance
    • VGS handshake and minimum dead-time insertion to prevent shoot-through
    • 50-mA to 1-A peak source current
    • 100-mA to 2-A peak sink current
    • dV/dt mitigation through strong pulldown
  • Integrated gate driver power supplies
    • High-side doubler charge pump For 100% PWM duty cycle control
    • Low-side linear regulator
  • Integrated LM5008A buck regulator
    • 6 to 95-V operating voltage range
    • 2.5 to 75-V, 350-mA output capability
  • Integrated triple current shunt amplifiers
    • Adjustable gain (5, 10, 20, 40 V/V)
    • Bidirectional or unidirectional support
  • 6x, 3x, 1x, and independent PWM modes
    • Supports 120° sensored operation
  • SPI or hardware interface available
  • Low-power sleep mode (20 µA at VVM = 48-V)
  • Integrated protection features
    • VM undervoltage lockout (UVLO)
    • Gate drive supply undervoltage (GDUV)
    • MOSFET VDS overcurrent protection (OCP)
    • MOSFET shoot-through prevention
    • Gate driver fault (GDF)
    • Thermal warning and shutdown (OTW/OTSD)
    • Fault condition indicator (nFAULT)
  • 9 to 100-V, Triple half-bridge gate driver
    • Optional integrated buck regulator
    • Optional triple low-side current shunt amplifiers
  • Smart gate drive architecture
    • Adjustable slew rate control for EMI performance
    • VGS handshake and minimum dead-time insertion to prevent shoot-through
    • 50-mA to 1-A peak source current
    • 100-mA to 2-A peak sink current
    • dV/dt mitigation through strong pulldown
  • Integrated gate driver power supplies
    • High-side doubler charge pump For 100% PWM duty cycle control
    • Low-side linear regulator
  • Integrated LM5008A buck regulator
    • 6 to 95-V operating voltage range
    • 2.5 to 75-V, 350-mA output capability
  • Integrated triple current shunt amplifiers
    • Adjustable gain (5, 10, 20, 40 V/V)
    • Bidirectional or unidirectional support
  • 6x, 3x, 1x, and independent PWM modes
    • Supports 120° sensored operation
  • SPI or hardware interface available
  • Low-power sleep mode (20 µA at VVM = 48-V)
  • Integrated protection features
    • VM undervoltage lockout (UVLO)
    • Gate drive supply undervoltage (GDUV)
    • MOSFET VDS overcurrent protection (OCP)
    • MOSFET shoot-through prevention
    • Gate driver fault (GDF)
    • Thermal warning and shutdown (OTW/OTSD)
    • Fault condition indicator (nFAULT)

The DRV835x family of devices are highly-integrated gate drivers for three-phase brushless DC (BLDC) motor applications. These applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal current control of BLDC motors. The device variants provide optional integrated current shunt amplifiers to support different motor control schemes and a buck regulator to power the gate driver or external controller.

The DRV835x uses smart gate drive (SGD) architecture to decrease the number of external components that are typically necessary for MOSFET slew rate control and protection circuits. The SGD architecture also optimizes dead time to prevent shoot-through conditions, provides flexibility in decreasing electromagnetic interference (EMI) by MOSFET slew rate control, and protects against gate short circuit conditions through VGS monitors. A strong gate pulldown circuit helps prevent unwanted dV/dt parasitic gate turn on events

Various PWM control modes (6x, 3x, 1x, and independent) are supported for simple interfacing to the external controller. These modes can decrease the number of outputs required of the controller for the motor driver PWM control signals. This family of devices also includes 1x PWM mode for simple sensored trapezoidal control of a BLDC motor by using an internal block commutation table.

The DRV835x family of devices are highly-integrated gate drivers for three-phase brushless DC (BLDC) motor applications. These applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal current control of BLDC motors. The device variants provide optional integrated current shunt amplifiers to support different motor control schemes and a buck regulator to power the gate driver or external controller.

The DRV835x uses smart gate drive (SGD) architecture to decrease the number of external components that are typically necessary for MOSFET slew rate control and protection circuits. The SGD architecture also optimizes dead time to prevent shoot-through conditions, provides flexibility in decreasing electromagnetic interference (EMI) by MOSFET slew rate control, and protects against gate short circuit conditions through VGS monitors. A strong gate pulldown circuit helps prevent unwanted dV/dt parasitic gate turn on events

Various PWM control modes (6x, 3x, 1x, and independent) are supported for simple interfacing to the external controller. These modes can decrease the number of outputs required of the controller for the motor driver PWM control signals. This family of devices also includes 1x PWM mode for simple sensored trapezoidal control of a BLDC motor by using an internal block commutation table.
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Technische Dokumentation

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Top-Dokumentation Typ Titel Format-Optionen Datum
* Data sheet DRV835x 100-V Three-Phase Smart Gate Driver datasheet (Rev. A) PDF | HTML 24 Jun 2019
Application brief Understanding Gate Driver Slew Rate Control, MOSFET Switching Optimization and Protection Features (Rev. A) PDF | HTML 11 Dez 2025
Application note Relating Payload to Brushless DC Motor Driver Specifications PDF | HTML 02 Dez 2024
Certificate DRV8353RS-EVM EU RoHS Declaration of Conformity (DoC) 28 Mär 2023
Certificate DRV8353RH-EVM EU RoHS Declaration of Conformity (DoC) 01 Mär 2023
Application note Best Practices for Board Layout of Motor Drivers (Rev. B) PDF | HTML 14 Okt 2021
Application note Hardware Design Considerations for an Electric Bicycle using BLDC Motor (Rev. B) 23 Jun 2021
Application note System Design Considerations for High-Power Motor Driver Applications PDF | HTML 22 Jun 2021
Application brief MSP430 and DRV83xx Selection Guide for Power Tools (Rev. A) PDF | HTML 14 Jun 2021
Application brief Brushless-DC Made Simple – Sensored Motor Control (Rev. B) PDF | HTML 13 Apr 2021
Application note Understanding Smart Gate Drive (Rev. D) 01 Mär 2021
E-book Ein Techniker-Leitfaden für Industrieroboter-Designs 25 Mär 2020
Application brief Low Voltage Motor Drive Operation With Smart Gate Drive 20 Dez 2018
Application brief DRV835x Split Supply Power Topology 26 Sep 2018
Application note Architecture for Brushless-DC Gate Drive Systems (Rev. A) 22 Aug 2018
Application brief Field Oriented Control Made Easy for Brushless DC Motors Using Smart Gate Drive (Rev. B) 22 Aug 2018
Application note Cut-Off Switch in High-Current Motor-Drive Applications (Rev. A) 20 Aug 2018

Design und Entwicklung

Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.

Evaluierungsplatine

DRV8353RH-EVM — DRV8353RH-Evaluierungsmodul, dreiphasiger bürstenloser DC-Smart-Gate-Treiber

Das DRV8353RH-EVM ist eine 3-phasige, bürstenlose DC-Antriebsstufe mit 15 A, die auf dem DRV8353RH -Gate-Treiber für CSD19532Q5B-NexFET™-MOSFETs basiert.

Das Modul verfügt über individuelle DC-Bus- und Phasenspannungserfassung sowie einzelne Low-Side-Strom-Shunt-Verstärker, wodurch sich dieses (...)

Benutzerhandbuch: PDF
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Evaluierungsplatine

DRV8353RS-EVM — DRV8353RS Evaluierungsmodul, dreiphasiger bürstenloser DC-Smart-Gate-Treiber 

Das DRV8353RS-EVM ist eine 3-phasige, bürstenlose DC-Antriebsstufe mit 15 A, der auf dem DRV8353RS-Gate-Treiber für CSD19532Q5B-NexFET™-MOSFETs basiert.

Das Modul verfügt über individuelle DC-Bus- und Phasenspannungserfassung sowie einzelne Low-Side-Strom-Shunt-Verstärker, wodurch sich dieses (...)

Benutzerhandbuch: PDF
Nicht verfügbar auf TI.com
Firmware

SLVC736 — DRV8353RS/H-EVM Firmware

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GUI für Evaluierungsmodul (EVM)

SLVC737 — DRV8353RS/H-EVM GUI

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Erste Schritte

MSP-MOTOR-CONTROL — MSP firmware solutions for motor control

MSP Motor Control is a collection of software, tools and examples to spin motors in 30 minutes or less with MSPM0 Arm® Cortex® M0+ MCUs and popular motor driver solutions.

MSP Motor Control provides examples for supported hardware kits to spin brushed, stepper, and three-phase motors with sensored (...)

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Berechnungstool

BLDC-MAX-QG-MOSFET-CALCULATOR — Calculate the maximum QG MOSFET for your motor driver

Calculate the maximum QG MOSFET that can be driven based on the PWM switching frequency, algorithm type, and additional external capacitance.
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Bestellen & Qualität

Beinhaltete Information:
  • RoHS
  • REACH
  • Bausteinkennzeichnung
  • Blei-Finish/Ball-Material
  • MSL-Rating / Spitzenrückfluss
  • MTBF-/FIT-Schätzungen
  • Materialinhalt
  • Qualifikationszusammenfassung
  • Kontinuierliches Zuverlässigkeitsmonitoring
Beinhaltete Information:
  • Werksstandort
  • Montagestandort

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