Startseite Energiemanagement Solid-State-Relais
NEU

TPSI2260-Q1

AKTIV

Verstärkt isolierter Schalter für die Automobilindustrie mit Avalanche-Schutz, 600 V, 50 mA

Produktdetails

FET Internal Number of channels 1 Switching voltage (max) (V) 600 Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 20 Rating Automotive Features 2-mA avalanche current, Capacitive isolation Withstand isolation voltage (VISO) (Vrms) 5000 Imax (mA) 50 Ron (typ) (Ω) 70 TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 OFF-state leakage current (µA) 1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000 Working isolation voltage (VIOWM) (Vrms) 1000
FET Internal Number of channels 1 Switching voltage (max) (V) 600 Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 20 Rating Automotive Features 2-mA avalanche current, Capacitive isolation Withstand isolation voltage (VISO) (Vrms) 5000 Imax (mA) 50 Ron (typ) (Ω) 70 TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 OFF-state leakage current (µA) 1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000 Working isolation voltage (VIOWM) (Vrms) 1000
SOIC (DWQ) 11 106.09 mm² 10.3 x 10.3
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C TA
  • Low EMI:
    • Meets CISPR25 class 5 performance with no additional components
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
      • TPSI2260-Q1: IAVA =1mA for 60s pulses
      • TPSI2260T-Q1: IAVA = 3mA for 60s pulses
    • 600V standoff voltage
    • RON = 65Ω (TJ = 25°C)
    • IOFF = 1.22µA at 500V (TJ = 105°C)
  • Low primary side supply current
    • 5mA ON state current
    • 3.5µA OFF state current (TJ = 25°C)
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 30 year projected lifetime at 1500VRMS / 2120DC working voltage
    • Reinforced isolation rating, VISO, up to 5000VRMS
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8mm (primary-secondary)
    • Creepage and clearance ≥ 6mm (across switch terminals)
  • Safety-Related Certifications
    • (Planned) DIN EN IEC 60747-17 (VDE 0884-17)
    • (Planned) UL 1577 component recognition program
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C TA
  • Low EMI:
    • Meets CISPR25 class 5 performance with no additional components
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
      • TPSI2260-Q1: IAVA =1mA for 60s pulses
      • TPSI2260T-Q1: IAVA = 3mA for 60s pulses
    • 600V standoff voltage
    • RON = 65Ω (TJ = 25°C)
    • IOFF = 1.22µA at 500V (TJ = 105°C)
  • Low primary side supply current
    • 5mA ON state current
    • 3.5µA OFF state current (TJ = 25°C)
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 30 year projected lifetime at 1500VRMS / 2120DC working voltage
    • Reinforced isolation rating, VISO, up to 5000VRMS
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8mm (primary-secondary)
    • Creepage and clearance ≥ 6mm (across switch terminals)
  • Safety-Related Certifications
    • (Planned) DIN EN IEC 60747-17 (VDE 0884-17)
    • (Planned) UL 1577 component recognition program

The TPSI2260-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2260-Q1 uses TI’s high reliability reinforced capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply. The TPSI2260-Q1 improves system reliability as TI’s capacitive isolation technology does not suffer from mechanical wearout or photo degradation failure modes common in mechanical relay and photo relay components.

The primary side of the device is powered by only 5mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 4.5V to 20V and the EN pin of the device should be driven by a GPIO output with Logic high between 2.1V to 20V. In other applications, the VDD and EN pins could be driven together driven together directly from the system supply or from a GPIO output.

The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±600V from S1 to S2. The TPSI2260-Q1 MOSFET avalanche robustness and thermally conscious package design allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 1mA (3mA for TPSI2260T-Q1)without requiring any external components.

The TPSI2260-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2260-Q1 uses TI’s high reliability reinforced capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply. The TPSI2260-Q1 improves system reliability as TI’s capacitive isolation technology does not suffer from mechanical wearout or photo degradation failure modes common in mechanical relay and photo relay components.

The primary side of the device is powered by only 5mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 4.5V to 20V and the EN pin of the device should be driven by a GPIO output with Logic high between 2.1V to 20V. In other applications, the VDD and EN pins could be driven together driven together directly from the system supply or from a GPIO output.

The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±600V from S1 to S2. The TPSI2260-Q1 MOSFET avalanche robustness and thermally conscious package design allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 1mA (3mA for TPSI2260T-Q1)without requiring any external components.

Herunterladen Video mit Transkript ansehen Video

Technische Dokumentation

star =Von TI ausgewählte Top-Empfehlungen für dieses Produkt
Keine Ergebnisse gefunden. Bitte geben Sie einen anderen Begriff ein und versuchen Sie es erneut.
Alle anzeigen 3
Typ Titel Datum
* Data sheet TPSI2260-Q1 600V, 50mA, Automotive Reinforced Solid-State Relay With Avalanche Protection datasheet (Rev. A) PDF | HTML 03 Dez 2025
Functional safety information TPSI2260-Q1 Functional Safety FIT Rate, FMD and Pin FMA (Rev. A) PDF | HTML 05 Dez 2025
Certificate TPSI2260Q1EVM EU Declaration of Conformity (DoC) 24 Jan 2025

Design und Entwicklung

Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.

Evaluierungsplatine

TPSI2260Q1EVM — TPSI2260-Q1 – Evaluierungsmodul

Das TPSI2260Q1EVM ist ein Hardware-Evaluierungsmodul (EVM) mit mehreren Testpunkten und Jumpern für die vollständige Evaluierung der Leistung und Funktionalität des Bausteins. Dieses Evaluierungsmodul enthält alles, was zum Testen und Bewerten des TPSI2260-Q1 erforderlich ist, bevor dieser als (...)

Benutzerhandbuch: PDF | HTML
Gehäuse Pins CAD-Symbole, Footprints und 3D-Modelle
SOIC (DWQ) 11 Ultra Librarian

Bestellen & Qualität

Beinhaltete Information:
  • RoHS
  • REACH
  • Bausteinkennzeichnung
  • Blei-Finish/Ball-Material
  • MSL-Rating / Spitzenrückfluss
  • MTBF-/FIT-Schätzungen
  • Materialinhalt
  • Qualifikationszusammenfassung
  • Kontinuierliches Zuverlässigkeitsmonitoring
Beinhaltete Information:
  • Werksstandort
  • Montagestandort

Empfohlene Produkte können Parameter, Evaluierungsmodule oder Referenzdesigns zu diesem TI-Produkt beinhalten.

Support und Schulungen

TI E2E™-Foren mit technischem Support von TI-Ingenieuren

Inhalte werden ohne Gewähr von TI und der Community bereitgestellt. Sie stellen keine Spezifikationen von TI dar. Siehe Nutzungsbedingungen.

Bei Fragen zu den Themen Qualität, Gehäuse oder Bestellung von TI-Produkten siehe TI-Support. ​​​​​​​​​​​​​​

Videos