TPSI2260-Q1
Verstärkt isolierter Schalter für die Automobilindustrie mit Avalanche-Schutz, 600 V, 50 mA
TPSI2260-Q1
- Qualified for automotive applications
- AEC-Q100 grade 1: –40 to 125°C TA
- Low EMI:
- Meets CISPR25 class 5 performance with no additional components
- Integrated avalanche rated MOSFETs
- Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
- TPSI2260-Q1: IAVA =1mA for 60s pulses
- TPSI2260C-Q1: IAVA =0.6mA for 60s pulses
- TPSI2260T-Q1: IAVA = 3mA for 60s pulses
- 600V standoff voltage
- RON = 65Ω (TJ = 25°C)
- IOFF = 1.22µA at 500V (TJ = 105°C)
- Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
- Low primary side supply current
- 5mA ON state current
- 3.5µA OFF state current (TJ = 25°C)
- Functional Safety Capable
- Documentation available to aid in ISO 26262 and IEC 61508 system design
- Robust isolation barrier:
- > 30 year projected lifetime at 1500VRMS / 2120DC working voltage
- Reinforced isolation rating, VISO, up to 5000VRMS
- SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
- Creepage and clearance ≥ 8mm (primary-secondary)
- Creepage and clearance ≥ 6mm (across switch terminals)
- Safety-Related Certifications
- (Planned) DIN EN IEC 60747-17 (VDE 0884-17)
- (Planned) UL 1577 component recognition program
The TPSI2260-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2260-Q1 uses TIs high reliability reinforced capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply. The TPSI2260-Q1 improves system reliability as TIs capacitive isolation technology does not suffer from mechanical wearout or photo degradation failure modes common in mechanical relay and photo relay components.
The primary side of the device is powered by only 5mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device must be connected to a system supply from between 4.5V to 20V and the EN pin of the device must be driven by a GPIO output with Logic high between 2.1V to 20V. In other applications, the VDD and EN pins can be driven together driven together directly from the system supply or from a GPIO output.
The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±600V from S1 to S2. The TPSI2260-Q1 MOSFET avalanche robustness and thermally conscious package design allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 1mA (0.6mA for TPSI2240C-Q1 and 3mA for TPSI2260T-Q1) without requiring any external components.
Technische Dokumentation
| Top-Dokumentation | Typ | Titel | Format-Optionen | Datum |
|---|---|---|---|---|
| * | Data sheet | TPSI2260-Q1 600V, 50mA, Automotive Reinforced Solid-State Relay With Avalanche Protection datasheet (Rev. B) | PDF | HTML | 09 Apr 2026 |
| Functional safety information | TPSI2260-Q1, TPSI2260C-Q1, and TPSI2260T-Q1 Functional Safety FIT Rate, FMD and Pin FMA (Rev. B) | PDF | HTML | 26 Jan 2026 | |
| Certificate | TPSI2260Q1EVM EU Declaration of Conformity (DoC) | 24 Jan 2025 |
Design und Entwicklung
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TPSI2260Q1EVM — TPSI2260-Q1 – Evaluierungsmodul
Das TPSI2260Q1EVM ist ein Hardware-Evaluierungsmodul (EVM) mit mehreren Testpunkten und Jumpern für die vollständige Evaluierung der Leistung und Funktionalität des Bausteins. Dieses Evaluierungsmodul enthält alles, was zum Testen und Bewerten des TPSI2260-Q1 erforderlich ist, bevor dieser als (...)
| Gehäuse | Pins | CAD-Symbole, Footprints und 3D-Modelle |
|---|---|---|
| SOIC (DWQ) | 11 | Ultra Librarian |
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