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Isolierte Gate-Treiber

UCC21530-Q1

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Isolierter Zweikanal-Gate-Treiber für den Automobilbereich mit 4 A, 6 A, 5,7 kVRMS und EN- und DT-Pi

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NEU UCC21551-Q1 AKTIV Isolierter Zweikanal-Gate-Treiber für die Automobilindustrie, 4A/6A 5kVRMS, mit EN- und DT-Pins Tighter VCCI range supporting digital controller thresholds. New DT equation. Increased CMTI and wider operating temperature range.

UCC21530-Q1

AKTIV
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Produktdetails

Number of channels 2 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Enable, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 14.7 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 TI functional safety category Functional Safety Quality-Managed Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 6 Fall time (ns) 7 Undervoltage lockout (typ) (V) 8, 12
Number of channels 2 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Enable, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 14.7 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 TI functional safety category Functional Safety Quality-Managed Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 6 Fall time (ns) 7 Undervoltage lockout (typ) (V) 8, 12
SOIC (DWK) 14 106.09 mm² 10.3 x 10.3
  • AEC-Q100 qualified with:
    • Device temperature grade 1
    • Device HBM ESD classification level H2
    • Device CDM ESD classification level C6
  • Functional Safety Quality-Managed
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Wide body SOIC-14 (DWK) package
  • 3.3-mm spacing between driver channels
  • Switching parameters:
    • 19-ns typical propagation delay
    • 10-ns minimum pulse width
    • 5-ns maximum delay matching
    • 6-ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 100-V/ns
  • Isolation barrier life >40 years
  • 4-A peak source, 6-A peak sink output
  • TTL and CMOS compatible inputs
  • 3-V to 18-V input VCCI range
  • Up to 25-V VDD output drive supply
    • 8-V and 12-V VDD UVLO options
  • Programmable overlap and dead time
  • Rejects input pulses and noise transients shorter than 5 ns
  • Operating temperature range –40 to +125°C
  • Safety-related certifications:
    • 8000-VPK isolation per DIN V VDE V 0884-11 :2017-01
    • 5.7-kVRMS isolation for 1 minute per UL 1577
    • CSA certification per IEC 60950-1, IEC 62368-1, IEC 61010-1 and IEC 60601-1 end equipment standards
    • CQC certification per GB4943.1-2011
  • AEC-Q100 qualified with:
    • Device temperature grade 1
    • Device HBM ESD classification level H2
    • Device CDM ESD classification level C6
  • Functional Safety Quality-Managed
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Wide body SOIC-14 (DWK) package
  • 3.3-mm spacing between driver channels
  • Switching parameters:
    • 19-ns typical propagation delay
    • 10-ns minimum pulse width
    • 5-ns maximum delay matching
    • 6-ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 100-V/ns
  • Isolation barrier life >40 years
  • 4-A peak source, 6-A peak sink output
  • TTL and CMOS compatible inputs
  • 3-V to 18-V input VCCI range
  • Up to 25-V VDD output drive supply
    • 8-V and 12-V VDD UVLO options
  • Programmable overlap and dead time
  • Rejects input pulses and noise transients shorter than 5 ns
  • Operating temperature range –40 to +125°C
  • Safety-related certifications:
    • 8000-VPK isolation per DIN V VDE V 0884-11 :2017-01
    • 5.7-kVRMS isolation for 1 minute per UL 1577
    • CSA certification per IEC 60950-1, IEC 62368-1, IEC 61010-1 and IEC 60601-1 end equipment standards
    • CQC certification per GB4943.1-2011

The UCC21530-Q1 is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion.

The input side is isolated from the two output drivers by a 5.7-kVRMS reinforced isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850 V.

This driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low.

The device accepts VDD supply voltages up to 25 V. A wide input VCCI range from 3 V to 18 V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.

The UCC21530-Q1 is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion.

The input side is isolated from the two output drivers by a 5.7-kVRMS reinforced isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850 V.

This driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low.

The device accepts VDD supply voltages up to 25 V. A wide input VCCI range from 3 V to 18 V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.
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Information

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Technische Dokumentation

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Typ Titel Datum
* Data sheet UCC21530-Q1 4-A, 6-A, 5.7-kVRMS Isolated Dual-Channel Gate Driver with 3.3-mm Channel-to-Channel Spacing datasheet (Rev. D) PDF | HTML 29 Apr 2021
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. S) 29 Feb 2024
Application note Impact of Narrow Pulse Widths in Gate Driver Circuits (Rev. A) PDF | HTML 25 Jan 2024
White paper Addressing High-Volt Design Challenges w/ Reliable and Affordable Isolation Tech (Rev. C) PDF | HTML 26 Sep 2023
Certificate UCC21540 CQC Certificate of Product Certification 17 Aug 2023
Certificate UCC215xx CQC Certificate of Product Certification 17 Aug 2023
Certificate UL Certification E181974 Vol 4. Sec 7 (Rev. C) 02 Dez 2022
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 16 Dez 2021
Certificate CSA Product Certificate (Rev. A) 15 Aug 2019
Technical article Searching for the newest innovations in power? Find them at APEC PDF | HTML 09 Feb 2019

Design und Entwicklung

Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.

Evaluierungsplatine

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UCC21530EVM-286 is designed for evaluating UCC21530DWK, which is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current, 12V UVLO, Enable (Active High) Function and 3.3 mm creepage between channels . This EVM could be served as a reference design for driving IGBTS and SiC (...)
Benutzerhandbuch: PDF | HTML
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Simulationsmodell

UCC21530 PSpice Transient Model

SLUM655.ZIP (23 KB) - PSpice Model
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Simulationstool

PSPICE-FOR-TI — PSpice® für TI Design-und Simulationstool

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Design guide: PDF
Schaltplan: PDF
Referenzdesigns

TIDA-01605 — Referenzdesign für zweikanaligen SiC-MOSFET-Gate-Treiber für die Automobilindustrie mit zweistufigem

This reference design is an automotive qualified isolated gate driver solution for driving Silicon Carbide (SiC) MOSFETs in half bridge configuration. The design includes two push pull bias supplies for the dual channel isolated gate driver respectively and each supply provides +15V and -4V output (...)
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Schaltplan: PDF
Referenzdesigns

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Schaltplan: PDF
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TIDM-02012 — Referenzdesign für Hochspannungs-HEV/EV-HLK-eCompressor-Motorsteuerung mit MathWorks®

Das TIDM-02012 ist ein Hochspannungs-Referenzdesign mit 5 kW für HEV/EV-Kompressoranwendungen (eCompressor), das von einer Echtzeit C2000™-MCU TMS320F28003x mit mittlerer Leistung gesteuert wird. Das Referenzdesign wurde zur Evaluierung mit 400-V- und 800-V-DC-Bus entwickelt und deckt die (...)
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Test report: PDF
Schaltplan: PDF
Referenzdesigns

PMP21561 — Referenzdesign für sicherheitsisolierten sekundären SiC-MOSFET-Treiber

This reference design provides an integrated high and low side isolated secondary gate driver solution for an automotive battery charging system incorporating two push-pull SN6505B transformer drivers and the isolated dual-channel gate driver UCC21521C.
Test report: PDF
Schaltplan: PDF
Referenzdesigns

PMP21553 — Referenzdesign für sicherheitsisolierten primären SiC-MOSFET-Treiber

This reference design provides an integrated high and low side isolated primary gate driver solution for an automotive battery charging system incorporating two push-pull SN6505B transformer drivers and the isolated dual-channel gate driver UCC21521C.
Test report: PDF
Schaltplan: PDF
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