UCC27200-Q1
Controlador de puerta de medio puente de 3 A y 120 V con UVLO de 8 V y entradas CMOS para automoción
UCC27200-Q1
- Qualified for Automotive Applications
- AEC-Q100 Qualified With the Following Results:
- Device Temperature Grade 1:
–40°C to 125°C Ambient Operating Temperature Range - Device HBM ESD Classification Level 2
- Device CDM ESD Classification Level C5
- Device Temperature Grade 1:
- Drives Two N-Channel MOSFETs in High-Side and Low-Side Configuration
- Maximum Boot Voltage: 120 V
- Maximum VDD Voltage: 20 V
- On-Chip 0.65-V VF, 0.6-Ω RD Bootstrap Diode
- Greater than 1 MHz of Operation
- 20-ns Propagation Delay Times
- 3-A Sink, 3-A Source Output Currents
- 8-ns Rise and 7-ns Fall Time With 1000-pF Load
- 1-ns Delay Matching
- Specified from –40°C to 140°C (Junction Temperature)
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The UCC2720x-Q1 family of high-frequency N-channel MOSFET drivers include a 120-V bootstrap diode and high-side and low-side drivers with independent inputs for maximum control flexibility. This allows for N-channel MOSFET control in half-bridge, full-bridge, two-switch forward, and active-clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1 ns between the turnon and turnoff of each other.
An on-chip bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers, forcing the outputs low if the drive voltage is below the specified threshold.
Two versions of the UCC2720x-Q1 are offered – the UCC27200-Q1 has high-noise-immune CMOS input thresholds, and the UCC27201-Q1 has TTL-compatible thresholds.
Both devices are offered in the 8-pin SO PowerPAD (DDA) package.
For all available packages, see the orderable addendum at the end of the data sheet.Productos similares que pueden interesarle
Pin por pin con la misma funcionalidad que el dispositivo comparado
Documentación técnica
Tipo | Título | Fecha | ||
---|---|---|---|---|
* | Data sheet | UCC2720x-Q1 120-V Boot, 3-A Peak, High-Frequency High-Side and Low-Side Driver datasheet (Rev. C) | PDF | HTML | 02 ago 2016 |
Application note | Understanding and comparing peak current capability of gate drivers | PDF | HTML | 30 mar 2021 | |
Application brief | External Gate Resistor Selection Guide (Rev. A) | 28 feb 2020 | ||
Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 28 feb 2020 | ||
More literature | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 29 oct 2018 |
Diseño y desarrollo
Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.
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Paquete | Pasadores | Descargar |
---|---|---|
HSOIC (DDA) | 8 | Ver opciones |
Pedidos y calidad
- RoHS
- REACH
- Marcado del dispositivo
- Acabado de plomo/material de la bola
- Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
- Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
- Contenido del material
- Resumen de calificaciones
- Monitoreo continuo de confiabilidad
- Lugar de fabricación
- Lugar de ensamblaje
Soporte y capacitación
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