The UCC27200-Q1 high frequency
N-channel MOSFET drivers includes a 120V bootstrap diode and high-side and low-side
drivers with independent inputs for maximum control flexibility. This allows for
N-channel MOSFET control in half-bridge, full-bridge, two-switch forward, and
active-clamp forward converters. The low-side and the high-side gate drivers are
independently controlled and matched to 1ns between the turnon and turnoff of each
other.
An on-chip bootstrap diode eliminates
the external discrete diodes. Undervoltage lockout is provided for both the
high-side and the low-side drivers, forcing the outputs low if the drive voltage is
below the specified threshold.
The UCC27200-Q1 has high-noise-immune
CMOS input thresholds.
The device is offered in the 8-pin SO
PowerPAD™ (DDA) package.
The UCC27200-Q1 high frequency
N-channel MOSFET drivers includes a 120V bootstrap diode and high-side and low-side
drivers with independent inputs for maximum control flexibility. This allows for
N-channel MOSFET control in half-bridge, full-bridge, two-switch forward, and
active-clamp forward converters. The low-side and the high-side gate drivers are
independently controlled and matched to 1ns between the turnon and turnoff of each
other.
An on-chip bootstrap diode eliminates
the external discrete diodes. Undervoltage lockout is provided for both the
high-side and the low-side drivers, forcing the outputs low if the drive voltage is
below the specified threshold.
The UCC27200-Q1 has high-noise-immune
CMOS input thresholds.
The device is offered in the 8-pin SO
PowerPAD™ (DDA) package.