SN74HC10-EP
- Controlled Baseline
- One Assembly/Test Site, One Fabrication Site
- Extended Temperature Performance of 40°C to 125°C
- Enhanced Diminishing Manufacturing Sources (DMS) Support
- Enhanced Product-Change Notification
- Qualification Pedigree

- Wide Operating Voltage Range of 2 V to 6 V
- Outputs Can Drive Up To 10 LSTTL Loads
- Low Power Consumption, 20-µA Max ICC
- Typical tpd = 9 ns
- ±4-mA Output Drive at 5 V
- Low Input Current of 1 µA Max
Component qualification in accordance with JEDEC and industry
standards to ensure reliable operation over an extended
temperature range. This includes, but is not limited to, Highly
Accelerated Stress Test (HAST) or biased 85/85, temperature
cycle, autoclave or unbiased HAST, electromigration, bond
intermetallic life, and mold compound life. Such qualification
testing should not be viewed as justifying use of this component
beyond specified performance and environmental limits.
The SN74HC10 device contains three independent 3-input NAND gates. It performs the Boolean function Y = (A B C)\ or Y = A\ + B\ + C\ in positive logic.
技術資料
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2 をすべて表示
| 上位の文書 | タイプ | タイトル | フォーマットオプション | 最新の英語版をダウンロード | 日付 | |
|---|---|---|---|---|---|---|
| * | データシート | SN74HC10-EP データシート | 2004/01/06 | |||
| * | VID | SN74HC10-EP VID V6204688 | 2016/06/21 |