LF356

활성

싱글, 36V, 5MHz, 높은 슬루율(12V/μs), 입력-V+, JFET 입력 연산 증폭기

이 제품의 최신 버전이 있습니다

open-in-new 대안 비교
비교 대상 장치보다 업그레이드된 기능을 지원하는 드롭인 대체품
TL071H 활성 -40°C에서 125°C까지의 작동을 지원하는 단일, 40V, 5MHz, 4mV 오프셋 전압, 20V/µs, 입력 - V+ 연산 증폭기 Wider temperature range (-40°C to 125°C), lower quiescent current (0.0937 mA), wider voltage range (4.5 V to 40 V), and improved offset voltage drift
TL081H 활성 -40°C에서 125°C까지의 작동을 지원하는 단일, 40V, 5.25MHz, 4mV 오프셋 전압, 20V/µs, 입력-V+ 연산 증폭기 Wider supply range (4.5 V to 40 V), higher GBW (5.25 MHz), faster slew rate (20 V/us), lower offset voltage (4 mV), lower power (0.9375 mA)

제품 상세 정보

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 10 Rail-to-rail In to V+ GBW (typ) (MHz) 5 Slew rate (typ) (V/µs) 12 Vos (offset voltage at 25°C) (max) (mV) 10 Iq per channel (typ) (mA) 5 Vn at 1 kHz (typ) (nV√Hz) 12 Rating Catalog Operating temperature range (°C) 0 to 70 Offset drift (typ) (µV/°C) 3 Input bias current (max) (pA) 8000 CMRR (typ) (dB) 100 Iout (typ) (A) 0.025 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3 Input common mode headroom (to positive supply) (typ) (V) 0.1 Output swing headroom (to negative supply) (typ) (V) 2 Output swing headroom (to positive supply) (typ) (V) -2
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 10 Rail-to-rail In to V+ GBW (typ) (MHz) 5 Slew rate (typ) (V/µs) 12 Vos (offset voltage at 25°C) (max) (mV) 10 Iq per channel (typ) (mA) 5 Vn at 1 kHz (typ) (nV√Hz) 12 Rating Catalog Operating temperature range (°C) 0 to 70 Offset drift (typ) (µV/°C) 3 Input bias current (max) (pA) 8000 CMRR (typ) (dB) 100 Iout (typ) (A) 0.025 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3 Input common mode headroom (to positive supply) (typ) (V) 0.1 Output swing headroom (to negative supply) (typ) (V) 2 Output swing headroom (to positive supply) (typ) (V) -2
PDIP (P) 8 92.5083 mm² 9.81 x 9.43 SOIC (D) 8 29.4 mm² 4.9 x 6
  • Advantages
    • Replace Expensive Hybrid and Module FET
      Op Amps
    • Rugged JFETs Allow Blow-Out Free Handling
      Compared With MOSFET Input Devices
    • Excellent for Low Noise Applications Using
      Either High or Low Source Impedance–Very
      Low 1/f Corner
    • Offset Adjust Does Not Degrade Drift or
      Common-Mode Rejection as in Most
      Monolithic Amplifiers
    • New Output Stage Allows Use of Large
      Capacitive Loads (5,000 pF) Without Stability
      Problems
    • Internal Compensation and Large Differential
      Input Voltage Capability
  • Common Features
    • Low Input Bias Current: 30 pA
    • Low Input Offset Current: 3 pA
    • High Input Impedance: 1012 Ω
    • Low Input Noise Current: 0.01 pA/√Hz
    • High Common-Mode Rejection Ratio: 100 dB
    • Large DC Voltage Gain: 106 dB
  • Uncommon Features
    • Extremely Fast Settling Time to 0.01%:
      • 4 µs for the LFx55 devices
      • 1.5 µs for the LFx56
      • 1.5 µs for the LFx57 (AV = 5)
    • Fast Slew Rate:
      • 5 V/µs for the LFx55
      • 12 V/µs for the LFx56
      • 50 V/µs for the LFx57 (AV = 5)
    • Wide Gain Bandwidth:
      • 2.5 MHz for the LFx55 devices
      • 5 MHz for the LFx56
      • 20 MHz for the LFx57 (AV = 5)
    • Low Input Noise Voltage:
      • 20 nV/√Hz for the LFx55
      • 12 nV/√Hz for the LFx56
      • 12 nV/√Hz for the LFx57 (AV = 5)
  • Advantages
    • Replace Expensive Hybrid and Module FET
      Op Amps
    • Rugged JFETs Allow Blow-Out Free Handling
      Compared With MOSFET Input Devices
    • Excellent for Low Noise Applications Using
      Either High or Low Source Impedance–Very
      Low 1/f Corner
    • Offset Adjust Does Not Degrade Drift or
      Common-Mode Rejection as in Most
      Monolithic Amplifiers
    • New Output Stage Allows Use of Large
      Capacitive Loads (5,000 pF) Without Stability
      Problems
    • Internal Compensation and Large Differential
      Input Voltage Capability
  • Common Features
    • Low Input Bias Current: 30 pA
    • Low Input Offset Current: 3 pA
    • High Input Impedance: 1012 Ω
    • Low Input Noise Current: 0.01 pA/√Hz
    • High Common-Mode Rejection Ratio: 100 dB
    • Large DC Voltage Gain: 106 dB
  • Uncommon Features
    • Extremely Fast Settling Time to 0.01%:
      • 4 µs for the LFx55 devices
      • 1.5 µs for the LFx56
      • 1.5 µs for the LFx57 (AV = 5)
    • Fast Slew Rate:
      • 5 V/µs for the LFx55
      • 12 V/µs for the LFx56
      • 50 V/µs for the LFx57 (AV = 5)
    • Wide Gain Bandwidth:
      • 2.5 MHz for the LFx55 devices
      • 5 MHz for the LFx56
      • 20 MHz for the LFx57 (AV = 5)
    • Low Input Noise Voltage:
      • 20 nV/√Hz for the LFx55
      • 12 nV/√Hz for the LFx56
      • 12 nV/√Hz for the LFx57 (AV = 5)

The LFx5x devices are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

The LFx5x devices are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

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기술 자료

star =TI에서 선정한 이 제품의 인기 문서
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11개 모두 보기
상위 문서 유형 직함 형식 옵션 날짜
* Data sheet LFx5x JFET Input Operational Amplifiers datasheet (Rev. D) PDF | HTML 2015/11/30
E-book The Signal e-book: A compendium of blog posts on op amp design topics 2017/03/28
Application note AN-272 Op Amp Booster Designs (Rev. B) 2013/04/23
Application note AN-263 Sine Wave Generation Techniques (Rev. C) 2013/04/22
Application note Effect of Heavy Loads on Accuracy and Linearity of Op Amp Circuits (Rev. B) 2013/04/22
Application note Data Acq Using ADC0816 & ADC0817 8-Bit ADC w/On-Chip 16 Chan Multiplexr 2004/05/10
Application note AN-293 Control Applications of CMOS DACs 2004/05/10
Application note AN-253 LH0024 and LH0032 High Speed Op Amp Applications 2004/05/02
Application note AN-275 CMOS D/A Converters Match Most Microprocessors 2004/05/02
Application note AN-447 Protection Schemes for BI-FET Amplifiers and Switches 2004/05/02
Application note Get Fast Stable Response From Improved Unity-Gain Followers 2002/10/02

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

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