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UCC218302-Q1

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UCC218302-Q1

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제품 상세 정보

Number of channels 1 Isolation rating Reinforced Power switch IGBT, SiCFET Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1063 Transient isolation voltage (VIOTM) (VPK) 7071 Peak output current (A) 5, 15 Peak output current (source) (typ) (A) 5, 15 Peak output current (sink) (typ) (A) 5, 15 Features AEC-Q100 Automotive Qual, High CMTI, High-side driver, Integrated protections: UVLO, Isolated, Overcurrent protection, Slew Rate Control, Under voltage lock out, Voltage monitoring Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 30 Input supply voltage (min) (V) -0.3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Operating temperature range (°C) -40 to 150 Rating Automotive Undervoltage lockout (typ) (V) 12 TI functional safety category Functional Safety Quality-Managed
Number of channels 1 Isolation rating Reinforced Power switch IGBT, SiCFET Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1063 Transient isolation voltage (VIOTM) (VPK) 7071 Peak output current (A) 5, 15 Peak output current (source) (typ) (A) 5, 15 Peak output current (sink) (typ) (A) 5, 15 Features AEC-Q100 Automotive Qual, High CMTI, High-side driver, Integrated protections: UVLO, Isolated, Overcurrent protection, Slew Rate Control, Under voltage lock out, Voltage monitoring Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 30 Input supply voltage (min) (V) -0.3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Operating temperature range (°C) -40 to 150 Rating Automotive Undervoltage lockout (typ) (V) 12 TI functional safety category Functional Safety Quality-Managed
SSOP (DFP) 28 78.795 mm² (7.65 mm × 10.3 mm)
  • 5kVRMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
  • Optimized for SiC MOSFETs and IGBTs switching up to 1500Vpk
  • 30V maximum output drive voltage (VDD-VEE)
  • Dual split outputs with on-the-fly drive strength selection
    • ±10A and ±5A drive current outputs
    • Digital input GD_SEL selects drive strength
  • 500V/ns minimum CMTI
  • 200ns response time fast DESAT protection with 9V threshold
  • Dedicated Soft Shut Down (SSD) pin with 2.5A sinking capability. Shut down current is controllable by an external resistor.
  • 4A internal active Miller clamp
  • Overcurrent reporting on FLT and reset from RST/EN
  • Fast enable and disable response on RST/EN
  • 12V VDD UVLO with power good on RDY
  • Overtemperature protection indicated on RDY
  • Output voltage gate monitor with real-time output state feedback on OUT_FB.
  • Active short circuit (ASC) input on secondary side to turn on power switch during system fault.
  • Wide body package with creepage and clearance > 8mm
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature
  • 5kVRMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
  • Optimized for SiC MOSFETs and IGBTs switching up to 1500Vpk
  • 30V maximum output drive voltage (VDD-VEE)
  • Dual split outputs with on-the-fly drive strength selection
    • ±10A and ±5A drive current outputs
    • Digital input GD_SEL selects drive strength
  • 500V/ns minimum CMTI
  • 200ns response time fast DESAT protection with 9V threshold
  • Dedicated Soft Shut Down (SSD) pin with 2.5A sinking capability. Shut down current is controllable by an external resistor.
  • 4A internal active Miller clamp
  • Overcurrent reporting on FLT and reset from RST/EN
  • Fast enable and disable response on RST/EN
  • 12V VDD UVLO with power good on RDY
  • Overtemperature protection indicated on RDY
  • Output voltage gate monitor with real-time output state feedback on OUT_FB.
  • Active short circuit (ASC) input on secondary side to turn on power switch during system fault.
  • Wide body package with creepage and clearance > 8mm
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature

The UCC218302-Q1 is a galvanically isolated single-channel gate driver with advanced protection features, best-in-class dynamic performance, and robustness designed for SiC MOSFETs and IGBTs up to 1500V DC operating voltage. The UCC218302-Q1 has dual outputs up to ±10A and ±5A peak source and sink current.

The input side is isolated from the output side with SiO2 isolation technology, supporting up to 1.06kVRMS working voltage and 10kVPK surge immunity. The isolation barrier also provides low part-to-part skew, and >500V/ns common-mode noise immunity (CMTI).

The UCC218302-Q1 includes state-of-art protection features such as fast overcurrent and short-circuit detection, controlled soft shutdown after a fault, fault reporting, active Miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness, active short circuit input on the secondary side, and output voltage gate monitoring.

The UCC218302-Q1 is a galvanically isolated single-channel gate driver with advanced protection features, best-in-class dynamic performance, and robustness designed for SiC MOSFETs and IGBTs up to 1500V DC operating voltage. The UCC218302-Q1 has dual outputs up to ±10A and ±5A peak source and sink current.

The input side is isolated from the output side with SiO2 isolation technology, supporting up to 1.06kVRMS working voltage and 10kVPK surge immunity. The isolation barrier also provides low part-to-part skew, and >500V/ns common-mode noise immunity (CMTI).

The UCC218302-Q1 includes state-of-art protection features such as fast overcurrent and short-circuit detection, controlled soft shutdown after a fault, fault reporting, active Miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness, active short circuit input on the secondary side, and output voltage gate monitoring.
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