DRV8334
- Three phase half-bridge gate driver
- Drives six N-channel MOSFETs (NMOS)
- 4.5 to 60-V wide operating voltage range
- Bootstrap architecture for high-side gate driver
- Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
- Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external cut-off or reverse polarity protection circuit
- Smart Gate Drive architecture
- 45-level configurable peak gate drive current up to 1000 / 2000-mA (source / sink)
- Three-step drive current configuration to optimize charge/discharge cycle and minimize deadtime
- Closed-loop automatic deadtime insertion based on gate-source voltage monitoring
- Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
- Low-side Current Sense Amplifier
- Sub-1 mV low input offset across temperature
- 9-level adjustable gain
- SPI-based detailed configuration and diagnostics
- DRVOFF pin to disable driver independently
- High voltage wake up pin (nSLEEP)
- 6x, 3x, 1x, and Independent PWM Modes
- Supports 3.3-V, and 5-V Logic Inputs
- Integrated protection features
- Battery and power supply voltage monitors
- Phase feedback comparator
- MOSFET VDS and Rsense over current monitors
- MOSFET VGS gate fault monitors
- Device thermal warning and shutdown
- Fault condition indicator pin
The DRV8334 is an integrated smart gate driver for three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8334 generates the correct gate drive voltages using an integrated bootstrap diode and a GVDD charge pump. The Smart Gate Drive architecture supports configurable peak gate drive current from 0.7-mA up to 1-A source and 2-A sink. The DRV8334 can operate from a single power supply with a wide input range of 4.5 to 60-V. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control, and provides overdrive gate drive voltage of external switches.
The DRV8334 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurement.
A wide range of diagnostics and protection features integrated in the DRV8334 enable a robust motor drive system design and help eliminate the needs of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.
技術文件
類型 | 標題 | 日期 | ||
---|---|---|---|---|
* | Data sheet | DRV8334 Three-Phase Smart Gate Driver with Accurate Current Sensing and Advanced Monitoring datasheet | PDF | HTML | 2023年 5月 9日 |
EVM User's guide | DRV8334 Evaluation Module User's Guide | PDF | HTML | 2023年 11月 15日 |
設計與開發
如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。
DRV8334EVM — 適用於 3 相閘極驅動器的 DRV8334 評估模組
BLDC-MAX-QG-MOSFET-CALCULATOR — Calculate the maximum QG MOSFET for your motor driver
支援產品和硬體
產品
BLDC 驅動器
封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
HTQFP (PHP) | 48 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點