產品詳細資料

Rating Catalog Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 9 Vs ABS (max) (V) 102 Features Buck Step Down Converter, Hardware Management I/F, SPI/I2C, Smart Gate Drive Operating temperature range (°C) -40 to 125
Rating Catalog Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 9 Vs ABS (max) (V) 102 Features Buck Step Down Converter, Hardware Management I/F, SPI/I2C, Smart Gate Drive Operating temperature range (°C) -40 to 125
VQFN (RGZ) 48 49 mm² 7 x 7
  • 9 to 100-V, Triple half-bridge gate driver
    • Optional integrated buck regulator
    • Optional triple low-side current shunt amplifiers
  • Smart gate drive architecture
    • Adjustable slew rate control for EMI performance
    • VGS handshake and minimum dead-time insertion to prevent shoot-through
    • 50-mA to 1-A peak source current
    • 100-mA to 2-A peak sink current
    • dV/dt mitigation through strong pulldown
  • Integrated gate driver power supplies
    • High-side doubler charge pump For 100% PWM duty cycle control
    • Low-side linear regulator
  • Integrated LM5008A buck regulator
    • 6 to 95-V operating voltage range
    • 2.5 to 75-V, 350-mA output capability
  • Integrated triple current shunt amplifiers
    • Adjustable gain (5, 10, 20, 40 V/V)
    • Bidirectional or unidirectional support
  • 6x, 3x, 1x, and independent PWM modes
    • Supports 120° sensored operation
  • SPI or hardware interface available
  • Low-power sleep mode (20 µA at VVM = 48-V)
  • Integrated protection features
    • VM undervoltage lockout (UVLO)
    • Gate drive supply undervoltage (GDUV)
    • MOSFET VDS overcurrent protection (OCP)
    • MOSFET shoot-through prevention
    • Gate driver fault (GDF)
    • Thermal warning and shutdown (OTW/OTSD)
    • Fault condition indicator (nFAULT)
  • 9 to 100-V, Triple half-bridge gate driver
    • Optional integrated buck regulator
    • Optional triple low-side current shunt amplifiers
  • Smart gate drive architecture
    • Adjustable slew rate control for EMI performance
    • VGS handshake and minimum dead-time insertion to prevent shoot-through
    • 50-mA to 1-A peak source current
    • 100-mA to 2-A peak sink current
    • dV/dt mitigation through strong pulldown
  • Integrated gate driver power supplies
    • High-side doubler charge pump For 100% PWM duty cycle control
    • Low-side linear regulator
  • Integrated LM5008A buck regulator
    • 6 to 95-V operating voltage range
    • 2.5 to 75-V, 350-mA output capability
  • Integrated triple current shunt amplifiers
    • Adjustable gain (5, 10, 20, 40 V/V)
    • Bidirectional or unidirectional support
  • 6x, 3x, 1x, and independent PWM modes
    • Supports 120° sensored operation
  • SPI or hardware interface available
  • Low-power sleep mode (20 µA at VVM = 48-V)
  • Integrated protection features
    • VM undervoltage lockout (UVLO)
    • Gate drive supply undervoltage (GDUV)
    • MOSFET VDS overcurrent protection (OCP)
    • MOSFET shoot-through prevention
    • Gate driver fault (GDF)
    • Thermal warning and shutdown (OTW/OTSD)
    • Fault condition indicator (nFAULT)

The DRV835x family of devices are highly-integrated gate drivers for three-phase brushless DC (BLDC) motor applications. These applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal current control of BLDC motors. The device variants provide optional integrated current shunt amplifiers to support different motor control schemes and a buck regulator to power the gate driver or external controller.

The DRV835x uses smart gate drive (SGD) architecture to decrease the number of external components that are typically necessary for MOSFET slew rate control and protection circuits. The SGD architecture also optimizes dead time to prevent shoot-through conditions, provides flexibility in decreasing electromagnetic interference (EMI) by MOSFET slew rate control, and protects against gate short circuit conditions through VGS monitors. A strong gate pulldown circuit helps prevent unwanted dV/dt parasitic gate turn on events

Various PWM control modes (6x, 3x, 1x, and independent) are supported for simple interfacing to the external controller. These modes can decrease the number of outputs required of the controller for the motor driver PWM control signals. This family of devices also includes 1x PWM mode for simple sensored trapezoidal control of a BLDC motor by using an internal block commutation table.

The DRV835x family of devices are highly-integrated gate drivers for three-phase brushless DC (BLDC) motor applications. These applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal current control of BLDC motors. The device variants provide optional integrated current shunt amplifiers to support different motor control schemes and a buck regulator to power the gate driver or external controller.

The DRV835x uses smart gate drive (SGD) architecture to decrease the number of external components that are typically necessary for MOSFET slew rate control and protection circuits. The SGD architecture also optimizes dead time to prevent shoot-through conditions, provides flexibility in decreasing electromagnetic interference (EMI) by MOSFET slew rate control, and protects against gate short circuit conditions through VGS monitors. A strong gate pulldown circuit helps prevent unwanted dV/dt parasitic gate turn on events

Various PWM control modes (6x, 3x, 1x, and independent) are supported for simple interfacing to the external controller. These modes can decrease the number of outputs required of the controller for the motor driver PWM control signals. This family of devices also includes 1x PWM mode for simple sensored trapezoidal control of a BLDC motor by using an internal block commutation table.

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技術文件

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類型 標題 日期
* Data sheet DRV835x 100-V Three-Phase Smart Gate Driver datasheet (Rev. A) PDF | HTML 2019年 6月 24日
Application note Best Practices for Board Layout of Motor Drivers (Rev. B) PDF | HTML 2021年 10月 14日
Application note Hardware Design Considerations for an Electric Bicycle using BLDC Motor (Rev. B) 2021年 6月 23日
Application note System Design Considerations for High-Power Motor Driver Applications PDF | HTML 2021年 6月 22日
Application brief MSP430 and DRV83xx Selection Guide for Power Tools (Rev. A) PDF | HTML 2021年 6月 14日
Application brief Brushless-DC Made Simple – Sensored Motor Control (Rev. B) PDF | HTML 2021年 4月 13日
Application note Understanding Smart Gate Drive (Rev. D) 2021年 3月 1日
E-book E-book: An engineer’s guide to industrial robot designs 2020年 2月 12日
Technical article Anything but discrete: How to simplify 48-V to 60-V DC-fed three-phase inverter de PDF | HTML 2019年 2月 1日
Application brief Low Voltage Motor Drive Operation With Smart Gate Drive 2018年 12月 20日
Application brief DRV835x Split Supply Power Topology 2018年 9月 26日
Application note Architecture for Brushless-DC Gate Drive Systems (Rev. A) 2018年 8月 22日
Application brief Field Oriented Control Made Easy for Brushless DC Motors Using Smart Gate Drive (Rev. B) 2018年 8月 22日
Application note Cut-Off Switch in High-Current Motor-Drive Applications (Rev. A) 2018年 8月 20日
User guide DRV8350x-EVM GUI User’s Guide 2017年 7月 10日
EVM User's guide DRV8350x-EVM Sensored Software User's Guide 2017年 7月 10日
EVM User's guide DRV8350x-EVM Sensorless Software User's Guide 2017年 7月 10日

設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

DRV8353RH-EVM — DRV8353RH 評估模組、三相無刷 DC 智慧型閘極驅動器

The DRV8353RH-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8353RH gate driver and CSD19532Q5B NexFET™ MOSFETs.

The module has individual DC bus and phase voltage sense as well as individual low-side current shunt amplifiers, making this evaluation module ideal for sensorless BLDC (...)

使用指南: PDF
開發板

DRV8353RS-EVM — DRV8353RS 評估模組、三相無刷 DC 智慧型閘極驅動器

The DRV8353RS-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8353RS gate driver and CSD19532Q5B NexFET™ MOSFETs.

The module has individual DC bus and phase voltage sense as well as individual low-side current shunt amplifiers, making this evaluation module ideal for sensorless BLDC (...)

使用指南: PDF
TI.com 無法提供
計算工具

BLDC-MAX-QG-MOSFET-CALCULATOR Calculate the maximum QG MOSFET for your motor driver

Calculate the maximum QG MOSFET that can be driven based on the PWM switching frequency, algorithm type, and additional external capacitance.
支援產品和硬體

支援產品和硬體

產品
BLDC 驅動器
DRV8320 65 V 最大 3 相智慧型閘極驅動器 DRV8320R 具降壓穩壓器的 65-V 最大 3 相智慧型閘極驅動器 DRV8323 具電流分流放大器的 65-V 最大 3 相智慧型閘極驅動器 DRV8323R 具降壓穩壓器和電流分流放大器的 65V 最大三相智慧型閘極驅動器 DRV8329 具有單電流感測放大器的 60V 3 相閘極驅動器 DRV8329-Q1 具有單電流感測放大器的車用 60V 3 相閘極驅動器 DRV8334 具有準確電流感測功能的 60-V 1000-mA 至 2000-mA 3 相閘極驅動器 DRV8340-Q1 車用 12V 至 24V 電池 3 相智慧型閘極驅動器 DRV8343-Q1 具有電流分流放大器的車用 12V 至 24V 電池 3 相智慧型閘極驅動器 DRV8350 102V 最大三相智慧型閘極驅動器 DRV8350F 102-V 最大 3 相功能安全品質管理智慧型閘極驅動器 DRV8350R 具降壓穩壓器的 102-V 最大 3 相智慧型閘極驅動器 DRV8353 具電流分流放大器的 102V 最大 3 相智慧型閘極驅動器 DRV8353F 具有 3x CSA 的 102V 最大 3 相位功能安全品質管理智慧型閘極驅動器 DRV8353M 具有電流分流放大器和廣泛溫度的 102-V 最大 3 相智慧型閘極驅動器 DRV8353R 具降壓穩壓器和電流分流放大器的 102-V 最大 3 相智慧型閘極驅動器
參考設計

TIDA-01629 — 48V/500W 三相逆變器,具有用於伺服驅動器的智慧閘極驅動器參考設計

Efficiency, protection, and integration are important design factors for compact DC-fed drives up to 60VDC. This reference design shows a three-phase inverter with nominal 48-V DC input and a 10-ARMS output current.  The 100-V intelligent three-phase gate driver DRV8350R with integrated buck (...)
Design guide: PDF
電路圖: PDF
參考設計

TIDA-010056 — 適用於 3 相 BLDC 驅動的 54-V、1.5 kW、>99% 效率、70x69 mm2 功率級參考設計

This reference design demonstrates a 1.5-kW power stage for driving a three-phase brushless DC motor in cordless tools operating from a 15-cell Li-ion battery with a voltage up to 63-V. The design is a 70mm x 69mm compact drive, bringing 25-ARMS continuous current at 20-kHz switching frequency (...)
Design guide: PDF
電路圖: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
VQFN (RGZ) 48 Ultra Librarian

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  • 鉛塗層/球物料
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  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中持續性的可靠性監測
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