LMG1020
- Low-Side, Ultra-Fast Gate Driver for GaN and Silicon FETs
- 1 ns Minimum Input Pulse Width
- Up to 60 MHz Operation
- 2.5 ns Typical, 4.5 ns Maximum Propagation Delay
- 400 ps Typical Rise and Fall Time
- 7-A Peak Source and 5-A Peak Sink Currents
- 5-V Supply Voltage
- UVLO and Overtemperature Protection
- 0.8 mm × 1.2 mm WCSP Package
The LMG1020 device is a single, low-side driver designed for driving GaN FETs and logic-level MOSFETs in high-speed applications including LiDAR, time-of-flight, facial recognition, and any power converters involving low side drivers. The design simplicity of the LMG1020 enables extremely fast propagation delays of 2.5 nanoseconds and minimum pulse width of 1 nanosecond. The drive strength is independently adjustable for the pull-up and pull-down edges by connecting external resistors between the gate and OUTH and OUTL, respectively.
The driver features undervoltage lockout (UVLO) and overtemperature protection (OTP) in the event of overload or fault conditions.
0.8-mm × 1.2-mm WCSP package of LMG1020 minimizes gate loop inductance and maximizes power density in high-frequency applications.
技術文件
設計與開發
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LMG1020EVM-006 — LMG1020 GaN 低壓側驅動器 + GaN FET 光達評估模組
PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具
TIDA-01573 — 適用於 LiDAR 的納秒雷射驅動器參考設計
封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
DSBGA (YFF) | 6 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。