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TPSI2140-Q1

現行

具有 2mA 雪崩擊穿額定值的車用 1200V、50mA 隔離開關

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最新 TPSI2240-Q1 現行 車用 1200V、50mA 隔離開關，具有強化型隔離和崩瀉保護 1200V, 50mA isolated switch with reinforced isolation and avalanche protection, improved emissions

TPSI2140-Q1

現行
產品規格表 立即訂購

產品詳細資料

FET Internal Number of channels 1 Switching voltage (max) (V) 1200 Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 20 Rating Automotive Features 2-mA avalanche current Withstand isolation voltage (VISO) (Vrms) 3750 Imax (mA) 50 Ron (typ) (Ω) 130 TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 OFF-state leakage current (µA) 1 Isolation rating Basic Surge isolation voltage (VIOSM) (VPK) 5000 Working isolation voltage (VIOWM) (Vrms) 1000
FET Internal Number of channels 1 Switching voltage (max) (V) 1200 Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 20 Rating Automotive Features 2-mA avalanche current Withstand isolation voltage (VISO) (Vrms) 3750 Imax (mA) 50 Ron (typ) (Ω) 130 TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 OFF-state leakage current (µA) 1 Isolation rating Basic Surge isolation voltage (VIOSM) (VPK) 5000 Working isolation voltage (VIOWM) (Vrms) 1000
SOIC (DWQ) 11 106.09 mm² 10.3 x 10.3
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C T A
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability during overvoltage conditions, including system level dielectric withstand testing (Hi-Pot)
      • I AVA = 2-mA for 5-s pulses, 1-mA for 60-s pulses
    • 1200-V standoff voltage
    • R ON = 130-Ω (T J = 25°C)
    • T ON, T OFF < 700-µs
  • Low primary side supply current
    • 9-mA ON state current
    • 3.5-µA OFF state current
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 26 year projected lifetime at 1000-V RMS / 1500-V DC working voltage
    • Isolation rating, V ISO, up to 3750-V RMS / 5300-V DC
    • Peak surge, V IOSM, up to 5000-V
    • ± 100-V/ns typical CMTI
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8-mm (primary-secondary)
    • Creepage and clearance ≥ 6-mm (across switch terminals)
  • Safety-related certifications
    • (Planned) DIN VDE V 0884-11:2017-01
    • (Planned) UL 1577 component recognition program
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C T A
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability during overvoltage conditions, including system level dielectric withstand testing (Hi-Pot)
      • I AVA = 2-mA for 5-s pulses, 1-mA for 60-s pulses
    • 1200-V standoff voltage
    • R ON = 130-Ω (T J = 25°C)
    • T ON, T OFF < 700-µs
  • Low primary side supply current
    • 9-mA ON state current
    • 3.5-µA OFF state current
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 26 year projected lifetime at 1000-V RMS / 1500-V DC working voltage
    • Isolation rating, V ISO, up to 3750-V RMS / 5300-V DC
    • Peak surge, V IOSM, up to 5000-V
    • ± 100-V/ns typical CMTI
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8-mm (primary-secondary)
    • Creepage and clearance ≥ 6-mm (across switch terminals)
  • Safety-related certifications
    • (Planned) DIN VDE V 0884-11:2017-01
    • (Planned) UL 1577 component recognition program

The TPSI2140-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2140-Q1 uses TI’s high reliability capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply.

The primary side of the device is powered by only 9 mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 5 V–20 V and the EN pin of the device should be driven by a GPIO output with logic HI between 2.1 V–20 V. In other applications, The VDD and EN pins could be driven together directly from the system supply or from a GPIO output. All control configurations of the TPSI2140-Q1 do not require additional external components such as a resistor and/or low side switch that are typically required in photo relay solutions.

The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2 kV from S1 to S2. The TPSI2140-Q1 MOSFET’s avalanche robustness and thermally conscious package design allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 2 mA without requiring any external components.

The TPSI2140-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2140-Q1 uses TI’s high reliability capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply.

The primary side of the device is powered by only 9 mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 5 V–20 V and the EN pin of the device should be driven by a GPIO output with logic HI between 2.1 V–20 V. In other applications, The VDD and EN pins could be driven together directly from the system supply or from a GPIO output. All control configurations of the TPSI2140-Q1 do not require additional external components such as a resistor and/or low side switch that are typically required in photo relay solutions.

The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2 kV from S1 to S2. The TPSI2140-Q1 MOSFET’s avalanche robustness and thermally conscious package design allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 2 mA without requiring any external components.

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類型 標題 日期
* Data sheet TPSI2140-Q1 1200-V, 50-mA, Automotive Isolated Switch With 2-mA Avalanche Rating datasheet (Rev. B) PDF | HTML 2023年 6月 2日
White paper A Comparative Analysis of Insulation Monitoring Device (IMD) Architectures in Bidirectional Onboard Chargers PDF | HTML 2025年 10月 21日
White paper 設計更安全、更智慧且更緊密相連的電池管理系統 (Rev. A) PDF | HTML 2025年 4月 3日
Application brief Implementing an Isolated Switch for Relay Welding Detection PDF | HTML 2024年 8月 15日
Application note Basics of Solid-State Relays PDF | HTML 2024年 7月 24日
Technical article How solid-state relays simplify insulation monitoring designs in high-voltage applications PDF | HTML 2024年 1月 4日
Functional safety information TPSI2140-Q1 Functional Safety, FIT Rate, Failure Mode Distribution and Pin FMA (Rev. A) PDF | HTML 2023年 6月 14日
Product overview When to use SSR or Isolated Gate Driver PDF | HTML 2022年 8月 4日
Technical article How to design high-voltage systems with higher reliability while reducing solution PDF | HTML 2022年 6月 8日
Technical article How to achieve higher-reliability isolation and a smaller solution size with solid PDF | HTML 2022年 5月 9日
Certificate TPSI2140Q1EVM EU RoHS Declaration of Conformity (DoC) (Rev. A) 2022年 4月 5日

設計與開發

如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

TPSI2140Q1EVM — TPSI2140-Q1 評估模組，適用具有 2-mA 雪崩擊穿額定值的 1200-V、50-mA 隔離開關

TPSI2140Q1EVM 評估模組是包含多個測試點和跳線的雙銅層電路板，以全面評估裝置功能。

使用指南: PDF | HTML
TI.com 無法提供
模擬型號

TPSI2140-Q1 PSpice Model

SLVMEA9.ZIP (3 KB) - PSpice Model
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模擬工具

CMSO-3P-BCS — comemso 電池芯模擬器

電池芯模擬器 (BCS) 是所有測試電池管理系統 (BMS) 核心。其可在電池芯層級模擬 BMS 的所有必要狀態和故障。
從：comemso elecronics GmbH
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此參考設計採用電橋 DC 絕緣監控 (DC-IM)方法，其允許精確對稱和不對稱絕緣洩漏偵測機制和隔離電阻偵測機制。我們為您介紹新一代隔離式放大器與交換器，其在熱側無需外部電源供應器就能啟用隔離。因此，MCU 可以從冷端供電隔離裝置。絕緣監控診斷可直接透過電源轉換或充電協定 MCU 進行處理。
Design guide: PDF
參考設計

TIDA-010272 — 適用於儲能系統的 1500V 高電壓機架監測器單元參考設計

此參考設計為高電壓、電流及絕緣阻抗準確度鋰離子 (Li-ion)、LiFePO4 電池架。此設計可監控四個高電壓匯流排輸入、一组分流器電流與溫度以及一個電池絕緣阻抗。此設計可保護電池架，以維持安全運作。此設計提供板載序列週邊介面 (SPI) 和板外菊輪鍊通訊介面，可實現符合成本效益的堆疊式連線與強化型隔離。這些功能讓此參考設計適用於高容量電池架應用。
Design guide: PDF
參考設計

TIDA-01513 — 車用高電壓與隔離洩漏測量參考設計

此參考設計的功能為監控高電壓匯流排至底盤接地的隔離電阻。在 HEV 和 EV 中，監控耦合裝置和元件從高電壓到底盤接地的隔離強度是一項必要功能，因為電池管理系統，牽引逆變器，DC/DC 轉換器，車載充電器和其他子系統以高電壓（大於 60V）運作。
Design guide: PDF
電路圖: PDF
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SOIC (DWQ) 11 Ultra Librarian
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內含資訊：
  • RoHS
  • REACH
  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中持續性的可靠性監測
內含資訊：
  • 晶圓廠位置
  • 組裝地點

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