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TRF0213-SEP

現行

耐輻射、近直流至 14GHz、3dB 頻寬、單端至差動 (S2D) RF 放大器

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產品規格表

TRF0213-SEP

現行
產品規格表 立即訂購

產品詳細資料

Type RF FDA Frequency (min) (MHz) 0.01 Frequency (max) (MHz) 14000 Gain (typ) (dB) 13.8 Noise figure (typ) (dB) 8.9 OIP3 (typ) (dBm) 31 P1dB (typ) (dBm) 13.4 Frequency of harmonic distortion measurement (GHz) 4 3rd harmonic (dBc) -55 OIP2 (typ) (dBm) 53 2nd harmonic (dBc) -53 Supply voltage (V) 5 Current consumption (mA) 174 Number of channels 1 Operating temperature range (°C) -55 to 125 Rating Catalog Output enable Yes Radiation, SEL (MeV·cm2/mg) 43 Radiation, TID (typ) (rad) 30000
Type RF FDA Frequency (min) (MHz) 0.01 Frequency (max) (MHz) 14000 Gain (typ) (dB) 13.8 Noise figure (typ) (dB) 8.9 OIP3 (typ) (dBm) 31 P1dB (typ) (dBm) 13.4 Frequency of harmonic distortion measurement (GHz) 4 3rd harmonic (dBc) -55 OIP2 (typ) (dBm) 53 2nd harmonic (dBc) -53 Supply voltage (V) 5 Current consumption (mA) 174 Number of channels 1 Operating temperature range (°C) -55 to 125 Rating Catalog Output enable Yes Radiation, SEL (MeV·cm2/mg) 43 Radiation, TID (typ) (rad) 30000
WQFN-FCRLF (RPV) 12 4 mm² 2 x 2
  • Vendor item drawing number: VID V62/25656
  • Radiation:
    • Total ionizing dose (TID)
      • Radiation hardness assurance (RHA) up to 30krad (Si) TID
      • Enhanced low dose rate sensitivity (ELDRS) free process
      • High dose rate radiation lot acceptance testing (HDR RLAT) up to 30krad (Si) TID
    • Single event effects (SEE)
      • Single event latch-up (SEL) immune to linear energy transfer (LET) of 43MeV‑cm2/mg
      • Single event transient (SET) characterized to LET of 43MeV‑cm2/mg
  • Space-enhanced plastic (Space EP, SEP)
    • Lead-free construction
    • Extended temperature range: –55°C to +125°C
  • Single-ended input, differential output
  • Excellent performance driving RF ADCs
  • Fixed 14dB gain
  • Bandwidth (3dB): >14GHz
  • Gain flatness (1dB): 12GHz
  • OIP3: 31dBm (4GHz), 31dBm (10GHz)
  • OP1dB: 13.4dBm (4GHz), 15.4dBm (10GHz)
  • NF: 8.9dB (4GHz), 10.6dB (10GHz)
  • Gain and phase imbalance: ±0.3dB and ±3º
  • Power-down feature
  • 5V single-supply operation
  • Active current: 174mA
  • Vendor item drawing number: VID V62/25656
  • Radiation:
    • Total ionizing dose (TID)
      • Radiation hardness assurance (RHA) up to 30krad (Si) TID
      • Enhanced low dose rate sensitivity (ELDRS) free process
      • High dose rate radiation lot acceptance testing (HDR RLAT) up to 30krad (Si) TID
    • Single event effects (SEE)
      • Single event latch-up (SEL) immune to linear energy transfer (LET) of 43MeV‑cm2/mg
      • Single event transient (SET) characterized to LET of 43MeV‑cm2/mg
  • Space-enhanced plastic (Space EP, SEP)
    • Lead-free construction
    • Extended temperature range: –55°C to +125°C
  • Single-ended input, differential output
  • Excellent performance driving RF ADCs
  • Fixed 14dB gain
  • Bandwidth (3dB): >14GHz
  • Gain flatness (1dB): 12GHz
  • OIP3: 31dBm (4GHz), 31dBm (10GHz)
  • OP1dB: 13.4dBm (4GHz), 15.4dBm (10GHz)
  • NF: 8.9dB (4GHz), 10.6dB (10GHz)
  • Gain and phase imbalance: ±0.3dB and ±3º
  • Power-down feature
  • 5V single-supply operation
  • Active current: 174mA

The TRF0213-SEP is a very high performance, radio frequency (RF) amplifier optimized for RF applications. This device is excellent for ac-coupled applications that require a single-ended to differential conversion when driving an RF sampling analog-to-digital converter (ADC) such as the high performance AFE7950-SEP or ADC12DJ5200-SEP. The device combines the functionality of a wide-band gain block and a wide-band passive balun. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, WQFN-FCRLF package.

The TRF0213-SEP operates on a single-rail supply and consumes about 174mA of active current. A power-down feature is also available for power savings.

The TRF0213-SEP is a very high performance, radio frequency (RF) amplifier optimized for RF applications. This device is excellent for ac-coupled applications that require a single-ended to differential conversion when driving an RF sampling analog-to-digital converter (ADC) such as the high performance AFE7950-SEP or ADC12DJ5200-SEP. The device combines the functionality of a wide-band gain block and a wide-band passive balun. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, WQFN-FCRLF package.

The TRF0213-SEP operates on a single-rail supply and consumes about 174mA of active current. A power-down feature is also available for power savings.
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類型 標題 日期
* Data sheet TRF0213-SEP Radiation Tolerant, Near-DC to > 14GHz, Single-Ended-to-Differential RF Amplifier datasheet PDF | HTML 2025年 12月 16日
* Radiation & reliability report TRF0213-SEP Production Flow and Reliability Report PDF | HTML 2025年 10月 8日

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模擬型號

TRF0213-SEP S-Parameter Model

SLVMET2.ZIP (8 KB) - S-Parameter Model
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WQFN-FCRLF (RPV) 12 Ultra Librarian
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