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UCC5350-Q1

現行

車用 3kVrms/5kVrms、10A/10A、1 通道隔離式驅動器,具備米勒箝位與 8V/12V UVLO

產品詳細資料

Number of channels 1 Isolation rating Basic, Reinforced Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 3000, 5000 Working isolation voltage (VIOWM) (Vrms) 700, 1500 Transient isolation voltage (VIOTM) (VPK) 4242, 7000 Peak output current (A) 10 Peak output current (source) (typ) (A) 10 Peak output current (sink) (typ) (A) 10 Features Active miller clamp, Split output Output VCC/VDD (min) (V) 9.5 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 15 Propagation delay time (µs) 0.065 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive, Catalog Bootstrap supply voltage (max) (V) 990 Rise time (ns) 10 Fall time (ns) 10 Undervoltage lockout (typ) (V) 8, 12 TI functional safety category Functional Safety-Capable
Number of channels 1 Isolation rating Basic, Reinforced Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 3000, 5000 Working isolation voltage (VIOWM) (Vrms) 700, 1500 Transient isolation voltage (VIOTM) (VPK) 4242, 7000 Peak output current (A) 10 Peak output current (source) (typ) (A) 10 Peak output current (sink) (typ) (A) 10 Features Active miller clamp, Split output Output VCC/VDD (min) (V) 9.5 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 15 Propagation delay time (µs) 0.065 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive, Catalog Bootstrap supply voltage (max) (V) 990 Rise time (ns) 10 Fall time (ns) 10 Undervoltage lockout (typ) (V) 8, 12 TI functional safety category Functional Safety-Capable
SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm) SOIC (DWV) 8 67.275 mm² (5.85 mm × 11.5 mm)
  • ±5A minimum peak current drive strength
  • ±10A typical peak current drive strength
  • 3V to 15V input supply voltage
  • Up to 33V driver supply voltage
    • 8V and 12V UVLO options
  • 100V/ns minimum CMTI
  • Negative 5V handling capability on input pins
  • 100ns (maximum) propagation delay and <25ns part-to-part skew
  • 8-pin DWV (8.5mm creepage) and D (4mm creepage) packages
  • Isolation barrier life > 40 Years
  • Safety-related certifications:
    • DIN EN IEC 60747-17(VDE 0884-17)
    • UL 1577 componenet recognition program
  • CMOS inputs
  • Operating junction temperature: –40°C to +150°C
  • ±5A minimum peak current drive strength
  • ±10A typical peak current drive strength
  • 3V to 15V input supply voltage
  • Up to 33V driver supply voltage
    • 8V and 12V UVLO options
  • 100V/ns minimum CMTI
  • Negative 5V handling capability on input pins
  • 100ns (maximum) propagation delay and <25ns part-to-part skew
  • 8-pin DWV (8.5mm creepage) and D (4mm creepage) packages
  • Isolation barrier life > 40 Years
  • Safety-related certifications:
    • DIN EN IEC 60747-17(VDE 0884-17)
    • UL 1577 componenet recognition program
  • CMOS inputs
  • Operating junction temperature: –40°C to +150°C

The UCC5350-Q1 is a single-channel, isolated gate driver with 10A source and 10A sink typical peak current designed to drive MOSFETs, IGBTs, and SiC MOSFETs. The UCC5350-Q1 has the option for Miller clamp or Split Outputs. The CLAMP pin is used to connect the transistor gate to an internal FET beside the output to prevent false turn-on caused by Miller current injection. The split outputs option allows separate control of the rise and fall times of the gate voltage with OUTH and OUTL pins.

The UCC5350-Q1 is available in a 4mm SOIC-8 (D) or 8.5mm wide body SOIC-8 (DWV) package and can support isolation voltage up to 3kVRMS and 5kVRMS, respectively. The input side is isolated from the output side with SiO2 capacitive isolation technology with longer than 40 years isolation barrier lifetime. The UCC5350-Q1 is a good fit for driving IGBTs or MOSFETs in applications such as high-voltage traction inverters and on-board chargers.

Compared to an opto-isolated gate driver, the UCC5350-Q1 device has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI.

The UCC5350-Q1 is a single-channel, isolated gate driver with 10A source and 10A sink typical peak current designed to drive MOSFETs, IGBTs, and SiC MOSFETs. The UCC5350-Q1 has the option for Miller clamp or Split Outputs. The CLAMP pin is used to connect the transistor gate to an internal FET beside the output to prevent false turn-on caused by Miller current injection. The split outputs option allows separate control of the rise and fall times of the gate voltage with OUTH and OUTL pins.

The UCC5350-Q1 is available in a 4mm SOIC-8 (D) or 8.5mm wide body SOIC-8 (DWV) package and can support isolation voltage up to 3kVRMS and 5kVRMS, respectively. The input side is isolated from the output side with SiO2 capacitive isolation technology with longer than 40 years isolation barrier lifetime. The UCC5350-Q1 is a good fit for driving IGBTs or MOSFETs in applications such as high-voltage traction inverters and on-board chargers.

Compared to an opto-isolated gate driver, the UCC5350-Q1 device has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI.

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 UCC5350-Q1 Single-Channel Isolated Gate Driver datasheet (Rev. G) PDF | HTML 2025/1/9
證書 VDE Certificate for Basic Isolation for DIN EN IEC 60747-17 (Rev. AA) 2026/6/11
Application brief Does My Design Need a Miller Clamp? PDF | HTML 2024/12/11
功能安全資訊 UCC5390-Q1 Functional Safety, FIT Rate, Failure Mode Distribution and Pin FMA PDF | HTML 2022/3/16
技術文章 Increasing power density with an integrated GaN solution PDF | HTML 2022/3/14
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 2021/12/16

設計與開發

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開發板

UCC5320SCEVM-058 — UCC5320SC 隔離式閘極驅動器評估模組

UCC5320SCEVM 是一款用於評估 UCC53xx 裝置系列的評估模組,並可彈性設定,使用者能依所用裝置將驅動器配置為分離輸出、米勒鉗位或 UVLO。EVM 具備足夠的測試點和跨接器選項,可用於評估具最少外部零組件的裝置。
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開發板

UCC5390ECDWVEVM — UCC5390ECDWV 10-A、10-A 5-kVRMS 隔離式單通道閘極驅動器評估模組

UCC5390ECDWVEVM 專為評估 UCC53xxDWV 系列而設計,這是一款具備 10A 源極和 10A 汲極峰值電流能力的 5.0-kVRMS 隔離式單通道閘極驅動器。此 EVM 的目標是依照產品規格書參數評估驅動器 IC 的性能。EVM 也可當成驅動器 IC 元件選擇指南使用。EVM 可用於判斷對閘極驅動器性能的 PCB 佈線圖影響。
使用指南: PDF
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開發板

UCC5390SCDEVM-010 — 精巧型單通道 3-kVrms 隔離式 17-A 閘道驅動偏壓供電評估模組

UCC5390SCDEVM-010 是一套完整的單通道隔離式閘極驅動電路板,內含可重新配置的偏壓電源,可提供廣泛的驅動電壓範圍。EVM 是以 SOIC-8 封裝的 17-A 分離輸出基本絕緣 UCC5390SCD 驅動器為基礎。此設計也包括基於 SN6505B 的偏壓電源,可針對 11V 至 33V 的單軌或分裂軌驅動電壓進行配置,涵蓋各種 Si 和 SiC FET 和 IGBT。
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模擬型號

UCC5350MCD PSpice Transient Model (Rev. A)

SLLM368A.ZIP (54 KB) - PSpice 模型
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模擬型號

UCC5350MCD Unencrypted PSpice Transient Model (Rev. A)

SLLM367A.ZIP (3 KB) - PSpice 模型
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模擬型號

UCC5350SBD PSpice Transient Model

SLLM379.ZIP (53 KB) - PSpice 模型
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模擬型號

UCC5350SBD Unencrypted PSpice Transient Model

SLLM378.ZIP (3 KB) - PSpice 模型
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計算工具

SLURAY7 — UCC53x0 Gate Resistor and Thermal Calculator Tool

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封裝 針腳 CAD 符號、佔位空間與 3D 模型
SOIC (D) 8 Ultra Librarian
SOIC (DWV) 8 Ultra Librarian

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