SLVSIF4 September   2026 TPS481HS04-Q1

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 SPI Timing Requirements
    7. 5.7 Switching Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Driving Capacitive, Resistive and Inductive Loads
      2. 7.3.2 Protection Mechanisms
        1. 7.3.2.1 Overcurrent Protection
          1. 7.3.2.1.1 Inrush Period - Overcurrent Protection
          2. 7.3.2.1.2 Overcurrent Protection - Steady State Operation
          3. 7.3.2.1.3 Programmable Fuse Protection
          4. 7.3.2.1.4 Immediate Shutdown Overcurrent Protection (IOCP)
        2. 7.3.2.2 Output Disable Function (OUT_DIS)
        3. 7.3.2.3 Thermal Shutdown
        4. 7.3.2.4 Reverse Battery
      3. 7.3.3 Diagnostic Mechanisms
        1. 7.3.3.1 Integrated ADC
        2. 7.3.3.2 Analog and Digital Current Sense Output
        3. 7.3.3.3 Output Voltage Measurement
        4. 7.3.3.4 MOSFET Temperature Measurement
        5. 7.3.3.5 VBB Voltage Measurement
        6. 7.3.3.6 VOUT Short-to-Battery and Open-Load
          1. 7.3.3.6.1 Measurement With Channel Output (FET) Enabled
          2. 7.3.3.6.2 Detection With Channel Output Disabled
        7. 7.3.3.7 VOUT Short-to-Battery or FET Short Detection For Power at All Times (PAAT) Loads
      4. 7.3.4 Fault Indication (FLT / WAKE)
      5. 7.3.5 SPI Mode Operation
    4. 7.4 Device Functional Modes
      1. 7.4.1 State Diagram
      2. 7.4.2 Power Down
      3. 7.4.3 SLEEP
      4. 7.4.4 Low Power Mode (LPM)
      5. 7.4.5 CONFIG or ACTIVE Mode
      6. 7.4.6 LIMPHOME Mode
    5. 7.5 TPS481HS04-Q1 Pre-production Silicon Limitations
      1. 7.5.1 SDO Pin Tristate Discrete Workaround (Only for parallel SPI configuration not for daisy chain)
  9. 8 Register Maps
    1. 8.1 TPS481HS04-Q1 Registers
    2. 8.2 EEPROM (NVM) Overview
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Tape and Reel Information
    2. 12.2 Mechanical Data

7.3.3.4 MOSFET Temperature Measurement

The TPS481HS04-Q1 provides a temperature measurement for each of the power MOSFETs through the 10-bit ADC.

The FET temperature sense function is disabled by default. To enable the FET temperature sense function for each channel it needs to be globally enabled in the ADC_CONFIG register through the ADC_TSNS_DIS bit.

The conversion equation for the FET temperature measurement is detailed in Equation 6.

Equation 6. A D C _ R E S U L T _ T   =   507.42   -   1.33   ×   T

The ADC measurement result will be available in the ADC_RESULT_CHx_T register. The TSNS_RDY_CHx bit is set to 1 if a new ADC conversion result exists since the register was last read. If any of the channels are in the I2T loop (I2T_MOD_CHx = 1), the FET temperature measurement, if enabled, will be disabled for all the channels and the TSNS_RDY_CHx bit will be 0. Once the channel(s) exit the I2T loop (I2T_MOD_CHx = 0), then the FET temperature measurement will be automatically re-enabled if previously enabled before the I2T event.