SLVSIF4 September   2026 TPS481HS04-Q1

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 SPI Timing Requirements
    7. 5.7 Switching Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Driving Capacitive, Resistive and Inductive Loads
      2. 7.3.2 Protection Mechanisms
        1. 7.3.2.1 Overcurrent Protection
          1. 7.3.2.1.1 Inrush Period - Overcurrent Protection
          2. 7.3.2.1.2 Overcurrent Protection - Steady State Operation
          3. 7.3.2.1.3 Programmable Fuse Protection
          4. 7.3.2.1.4 Immediate Shutdown Overcurrent Protection (IOCP)
        2. 7.3.2.2 Output Disable Function (OUT_DIS)
        3. 7.3.2.3 Thermal Shutdown
        4. 7.3.2.4 Reverse Battery
      3. 7.3.3 Diagnostic Mechanisms
        1. 7.3.3.1 Integrated ADC
        2. 7.3.3.2 Analog and Digital Current Sense Output
        3. 7.3.3.3 Output Voltage Measurement
        4. 7.3.3.4 MOSFET Temperature Measurement
        5. 7.3.3.5 VBB Voltage Measurement
        6. 7.3.3.6 VOUT Short-to-Battery and Open-Load
          1. 7.3.3.6.1 Measurement With Channel Output (FET) Enabled
          2. 7.3.3.6.2 Detection With Channel Output Disabled
        7. 7.3.3.7 VOUT Short-to-Battery or FET Short Detection For Power at All Times (PAAT) Loads
      4. 7.3.4 Fault Indication (FLT / WAKE)
      5. 7.3.5 SPI Mode Operation
    4. 7.4 Device Functional Modes
      1. 7.4.1 State Diagram
      2. 7.4.2 Power Down
      3. 7.4.3 SLEEP
      4. 7.4.4 Low Power Mode (LPM)
      5. 7.4.5 CONFIG or ACTIVE Mode
      6. 7.4.6 LIMPHOME Mode
    5. 7.5 TPS481HS04-Q1 Pre-production Silicon Limitations
      1. 7.5.1 SDO Pin Tristate Discrete Workaround (Only for parallel SPI configuration not for daisy chain)
  9. 8 Register Maps
    1. 8.1 TPS481HS04-Q1 Registers
    2. 8.2 EEPROM (NVM) Overview
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Tape and Reel Information
    2. 12.2 Mechanical Data

7.3.2.3 Thermal Shutdown

The device includes a temperature sensor on the power FET and within the controller portion of the device to monitor the temperature of the FET (TJ,FET) and the temperature of the controller (TJ,CONTROLLER). There are two cases that the device will consider to be a thermal shutdown fault:

  • Relative thermal shutdown (TREL): TJ,FET – TJ,CONTROLLER > TREL
  • Absolute thermal shutdown (TABS): TJ,FET > TABS

If either of the above faults occur, the switch will be turned off. The device will signal a fault through the FLT/WAKE pin.

Relative thermal shutdown (TREL)

A relative thermal shutdown event can occur when there is a large peak power event such as a short-to-ground event where the FET temperature (TJ,FET) quickly rises relative to the controller temperature (TJ,CONTROLLER). Once the relative temperature (TJ,FET – TJ,CONTROLLER) exceeds TREL the channel will be turned off.

Absolute thermal shutdown (TABS)

An absolute thermal shutdown occurs when the FET temperature (TJ,FET) rises above TABS. This can occur when a channel is subjected to long durations of overcurrent such as a permanent short use case. Once the FET temperature (TJ,FET) exceeds TABS the channel will be turned off.