SLVSIL5A May   2025  – September 2025 UCC25661-Q1

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input Power Proportional Control
        1. 7.3.1.1 Voltage Feedforward
      2. 7.3.2 VCR Synthesizer
        1. 7.3.2.1 TSET Programming
      3. 7.3.3 Feedback Chain (Control Input)
      4. 7.3.4 Adaptive Dead Time
      5. 7.3.5 Input Voltage Sensing
        1. 7.3.5.1 Brownin and Brownout Thresholds and Options
        2. 7.3.5.2 Output OVP and External OTP
      6. 7.3.6 Resonant Tank Current Sensing
    4. 7.4 Protections
      1. 7.4.1 Zero Current Switching (ZCS) Protection
      2. 7.4.2 Minimum Current Turn-off During Soft Start
      3. 7.4.3 Cycle-by-Cycle Current Limit and Short Circuit Protection
      4. 7.4.4 Overload Protection (OLP)
      5. 7.4.5 VCC OVP Protection
    5. 7.5 Device Functional Modes
      1. 7.5.1 Startup
        1. 7.5.1.1 With HV Startup
        2. 7.5.1.2 Without HV Startup
      2. 7.5.2 Soft Start Ramp
        1. 7.5.2.1 Startup Transition to Regulation
      3. 7.5.3 Light Load Management
        1. 7.5.3.1 Operating Modes (Burst Pattern)
        2. 7.5.3.2 Mode Transition Management
        3. 7.5.3.3 Burst Mode Thresholds Programming
        4. 7.5.3.4 PFC On/Off
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  LLC Power Stage Requirements
        2. 8.2.2.2  LLC Gain Range
        3. 8.2.2.3  Select Ln and Qe
        4. 8.2.2.4  Determine Equivalent Load Resistance
        5. 8.2.2.5  Determine Component Parameters for LLC Resonant Circuit
        6. 8.2.2.6  LLC Primary-Side Currents
        7. 8.2.2.7  LLC Secondary-Side Currents
        8. 8.2.2.8  LLC Transformer
        9. 8.2.2.9  LLC Resonant Inductor
        10. 8.2.2.10 LLC Resonant Capacitor
        11. 8.2.2.11 LLC Primary-Side MOSFETs
        12. 8.2.2.12 Design Considerations for Adaptive Dead-Time
        13. 8.2.2.13 LLC Rectifier Diodes
        14. 8.2.2.14 LLC Output Capacitors
        15. 8.2.2.15 HV Pin Series Resistors
        16. 8.2.2.16 BLK Pin Voltage Divider
        17. 8.2.2.17 ISNS Pin Differentiator
        18. 8.2.2.18 TSET Pin
        19. 8.2.2.19 OVP/OTP Pin
        20. 8.2.2.20 Burst Mode Programming
        21. 8.2.2.21 Application Curves
    3. 8.3 Power Supply Recommendations
      1. 8.3.1 VCCP Pin Capacitor
      2. 8.3.2 Boot Capacitor
      3. 8.3.3 V5P Pin Capacitor
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Layout Guidelines

  • Connect a 2.2µF ceramic capacitor on VCCP pin, in addition to the energy storage electrolytic capacitor. Place the 2.2µF ceramic capacitor as close as possible to the VCCP pin.
  • The minimum recommended boot capacitor (CB) is 0.1µF. Determine the minimum value of the boot capacitor by the minimum burst frequency. Establish that the boot capacitor is large enough to hold the bootstrap voltage during the lowest burst frequency. Refer to the IBOOT_LEAK (boot leakage current) in the electrical table.
  • Connect signal ground and power ground at the single-point. Power ground is recommended to connect to the negative terminal of the LLC converter input bulk capacitor.
  • Place the filter capacitors for ISNS (100pF), BLK (10nF), LL (330pF), TSET (220pF), OVP/OTP (100pF) as close as possible to the respective pins.
  • Keep the FB trace as short as possible and route the FB trace away from high dv/dt traces.
  • Use film capacitors or C0G, NP0 ceramic capacitors for low distortion of the ISNS capacitor.
  • Add necessary filtering capacitors on the VCCP pin to filter out the high spikes on the bias winding waveform.
  • Keep necessary high voltage clearance and creepage.
  • If 2kV HBM ESD rating is needed on the HV pin, place a 100pF capacitor from the HV pin to ground to pass up to 2kV HBM ESD.