TIDUF82B August   2024  – May 2025 DRV8162 , INA241A , ISOM8710

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Reference Design Overview
    2. 1.2 Key System Specifications
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
      1. 2.2.1 Hardware Design
        1. 2.2.1.1 Power Stage Gate Driver
          1. 2.2.1.1.1 Gate Driver
          2. 2.2.1.1.2 Protection Features
          3. 2.2.1.1.3 VGVDD Definition
          4. 2.2.1.1.4 Strap Functions
        2. 2.2.1.2 Power Stage FETs
          1. 2.2.1.2.1 VGS versus RDS(ON)
        3. 2.2.1.3 Phase Current and Voltage Sensing
          1. 2.2.1.3.1 Phase A and Phase B Current Sensing
          2. 2.2.1.3.2 Phase C Current Sensing
          3. 2.2.1.3.3 Voltage Sensing
        4. 2.2.1.4 Host Processor Interface
        5. 2.2.1.5 Gate Drive Shutdown Path
        6. 2.2.1.6 System Diagnostic Measurements
          1. 2.2.1.6.1 Temperature Measurement
        7. 2.2.1.7 System Power Supply
          1. 2.2.1.7.1 12V Rail
          2. 2.2.1.7.2 3.3V Rail
      2. 2.2.2 Software Design
    3. 2.3 Highlighted Products
      1. 2.3.1 DRV8162L
      2. 2.3.2 INA241A
      3. 2.3.3 AMC0106M05
      4. 2.3.4 TPSM861253
      5. 2.3.5 LMR38010
      6. 2.3.6 TMP6131
      7. 2.3.7 ISOM8710
  9. 3Hardware, Software Test Requirements and Test Results
    1. 3.1 Hardware Requirements
      1. 3.1.1 PCB Overview
      2. 3.1.2 Hardware Configuration
        1. 3.1.2.1 Prerequisites
        2. 3.1.2.2 Default Resistor and Jumper Configuration
        3. 3.1.2.3 Connector
          1. 3.1.2.3.1 Host Processor Interface
    2. 3.2 Test Setup
    3. 3.3 Test Results
      1. 3.3.1 Power Management
        1. 3.3.1.1 Power Up
        2. 3.3.1.2 Power Down
      2. 3.3.2 Gate Voltage and Phase Voltage
        1. 3.3.2.1 20 VDC
        2. 3.3.2.2 48 VDC
        3. 3.3.2.3 60 VDC
      3. 3.3.3 Digital PWM and Gate Voltage
      4. 3.3.4 Phase-Current Measurements
      5. 3.3.5 System Test Results
        1. 3.3.5.1 Thermal Analysis
  10. 4Design and Documentation Support
    1. 4.1 Design Files
      1. 4.1.1 Schematics
      2. 4.1.2 BOM
    2. 4.2 Tools and Software
    3. 4.3 Documentation Support
    4. 4.4 Support Resources
    5. 4.5 Trademarks
  11. 5About the Authors
  12. 6Revision History
2.2.1.1.1 Gate Driver

The DRV8162L is used to drive two N-Channel power MOSFETs in half-bridge configuration. The device supports 16-level output peak currents up to 1A source and 2A sink. This reference design optimized the gate drive currents for the best switching performance of the power stage.