TIDUF82B August   2024  – May 2025 DRV8162 , INA241A , ISOM8710

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Reference Design Overview
    2. 1.2 Key System Specifications
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
      1. 2.2.1 Hardware Design
        1. 2.2.1.1 Power Stage Gate Driver
          1. 2.2.1.1.1 Gate Driver
          2. 2.2.1.1.2 Protection Features
          3. 2.2.1.1.3 VGVDD Definition
          4. 2.2.1.1.4 Strap Functions
        2. 2.2.1.2 Power Stage FETs
          1. 2.2.1.2.1 VGS versus RDS(ON)
        3. 2.2.1.3 Phase Current and Voltage Sensing
          1. 2.2.1.3.1 Phase A and Phase B Current Sensing
          2. 2.2.1.3.2 Phase C Current Sensing
          3. 2.2.1.3.3 Voltage Sensing
        4. 2.2.1.4 Host Processor Interface
        5. 2.2.1.5 Gate Drive Shutdown Path
        6. 2.2.1.6 System Diagnostic Measurements
          1. 2.2.1.6.1 Temperature Measurement
        7. 2.2.1.7 System Power Supply
          1. 2.2.1.7.1 12V Rail
          2. 2.2.1.7.2 3.3V Rail
      2. 2.2.2 Software Design
    3. 2.3 Highlighted Products
      1. 2.3.1 DRV8162L
      2. 2.3.2 INA241A
      3. 2.3.3 AMC0106M05
      4. 2.3.4 TPSM861253
      5. 2.3.5 LMR38010
      6. 2.3.6 TMP6131
      7. 2.3.7 ISOM8710
  9. 3Hardware, Software Test Requirements and Test Results
    1. 3.1 Hardware Requirements
      1. 3.1.1 PCB Overview
      2. 3.1.2 Hardware Configuration
        1. 3.1.2.1 Prerequisites
        2. 3.1.2.2 Default Resistor and Jumper Configuration
        3. 3.1.2.3 Connector
          1. 3.1.2.3.1 Host Processor Interface
    2. 3.2 Test Setup
    3. 3.3 Test Results
      1. 3.3.1 Power Management
        1. 3.3.1.1 Power Up
        2. 3.3.1.2 Power Down
      2. 3.3.2 Gate Voltage and Phase Voltage
        1. 3.3.2.1 20 VDC
        2. 3.3.2.2 48 VDC
        3. 3.3.2.3 60 VDC
      3. 3.3.3 Digital PWM and Gate Voltage
      4. 3.3.4 Phase-Current Measurements
      5. 3.3.5 System Test Results
        1. 3.3.5.1 Thermal Analysis
  10. 4Design and Documentation Support
    1. 4.1 Design Files
      1. 4.1.1 Schematics
      2. 4.1.2 BOM
    2. 4.2 Tools and Software
    3. 4.3 Documentation Support
    4. 4.4 Support Resources
    5. 4.5 Trademarks
  11. 5About the Authors
  12. 6Revision History
2.2.1.1.2 Protection Features

The overcurrent event of the power stage is detected with the DRV8162L by measuring the drain-source voltage drop VDS of the FET. The overcurrent trip threshold of the DRV8162L can be set using strap resistors with 13-level options. These values can be found in the protection circuits section of the electrical characteristics chapter of the DRV8162L data sheet, by the parameters of VDS_LVLx_y. The minimum is 0.1V and the maximum is 2.0V.

With this feature, a blanking time is also adopted to make sure no overshoots are being detected during the switching of the FETs.

For more information on the protection features, see gate driver protective circuits section in the DRV8162L data sheet.