TIDUF82B August   2024  – May 2025 DRV8162 , INA241A , ISOM8710

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Reference Design Overview
    2. 1.2 Key System Specifications
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
      1. 2.2.1 Hardware Design
        1. 2.2.1.1 Power Stage Gate Driver
          1. 2.2.1.1.1 Gate Driver
          2. 2.2.1.1.2 Protection Features
          3. 2.2.1.1.3 VGVDD Definition
          4. 2.2.1.1.4 Strap Functions
        2. 2.2.1.2 Power Stage FETs
          1. 2.2.1.2.1 VGS versus RDS(ON)
        3. 2.2.1.3 Phase Current and Voltage Sensing
          1. 2.2.1.3.1 Phase A and Phase B Current Sensing
          2. 2.2.1.3.2 Phase C Current Sensing
          3. 2.2.1.3.3 Voltage Sensing
        4. 2.2.1.4 Host Processor Interface
        5. 2.2.1.5 Gate Drive Shutdown Path
        6. 2.2.1.6 System Diagnostic Measurements
          1. 2.2.1.6.1 Temperature Measurement
        7. 2.2.1.7 System Power Supply
          1. 2.2.1.7.1 12V Rail
          2. 2.2.1.7.2 3.3V Rail
      2. 2.2.2 Software Design
    3. 2.3 Highlighted Products
      1. 2.3.1 DRV8162L
      2. 2.3.2 INA241A
      3. 2.3.3 AMC0106M05
      4. 2.3.4 TPSM861253
      5. 2.3.5 LMR38010
      6. 2.3.6 TMP6131
      7. 2.3.7 ISOM8710
  9. 3Hardware, Software Test Requirements and Test Results
    1. 3.1 Hardware Requirements
      1. 3.1.1 PCB Overview
      2. 3.1.2 Hardware Configuration
        1. 3.1.2.1 Prerequisites
        2. 3.1.2.2 Default Resistor and Jumper Configuration
        3. 3.1.2.3 Connector
          1. 3.1.2.3.1 Host Processor Interface
    2. 3.2 Test Setup
    3. 3.3 Test Results
      1. 3.3.1 Power Management
        1. 3.3.1.1 Power Up
        2. 3.3.1.2 Power Down
      2. 3.3.2 Gate Voltage and Phase Voltage
        1. 3.3.2.1 20 VDC
        2. 3.3.2.2 48 VDC
        3. 3.3.2.3 60 VDC
      3. 3.3.3 Digital PWM and Gate Voltage
      4. 3.3.4 Phase-Current Measurements
      5. 3.3.5 System Test Results
        1. 3.3.5.1 Thermal Analysis
  10. 4Design and Documentation Support
    1. 4.1 Design Files
      1. 4.1.1 Schematics
      2. 4.1.2 BOM
    2. 4.2 Tools and Software
    3. 4.3 Documentation Support
    4. 4.4 Support Resources
    5. 4.5 Trademarks
  11. 5About the Authors
  12. 6Revision History

2.2.1.5 Gate Drive Shutdown Path

Due to the VGVDD and VGVDD_LS split-supply feature of the half-bridge gate driver DRV8162L, there is an option to shut down the high-side outputs and the low-side outputs of the gate drivers of the three phases with independent paths. An example circuit is implemented in this design.

There are two load switches (U12 and U14, TPS22810DRVR) built into the system for the VGVDD and the VGVDD_LS supplies, respectively. Inside the DRV8162L, the VGVDD_LS is used to supply the low-side driver circuits and the VGVDD is used to supply the high-side bootstrap circuit.

There is a third shutdown path built into the system with a specific load switch (U9, TPS22948DCKT) for the 3.3V power supply of the two PWM buffers and level translator chips (U13 and U15, TXU0304BQA). The output-enable (OE) pins of both devices can be configured to be fed with either an GPIO output of the system control MCU (J2-Pin18 of the host processor interface) or an external input signal through an opto-emulator isolator (U10 or U11, ISOM8710DFF).