TIDUF82B August   2024  – May 2025 DRV8162 , INA241A , ISOM8710

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Reference Design Overview
    2. 1.2 Key System Specifications
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
      1. 2.2.1 Hardware Design
        1. 2.2.1.1 Power Stage Gate Driver
          1. 2.2.1.1.1 Gate Driver
          2. 2.2.1.1.2 Protection Features
          3. 2.2.1.1.3 VGVDD Definition
          4. 2.2.1.1.4 Strap Functions
        2. 2.2.1.2 Power Stage FETs
          1. 2.2.1.2.1 VGS versus RDS(ON)
        3. 2.2.1.3 Phase Current and Voltage Sensing
          1. 2.2.1.3.1 Phase A and Phase B Current Sensing
          2. 2.2.1.3.2 Phase C Current Sensing
          3. 2.2.1.3.3 Voltage Sensing
        4. 2.2.1.4 Host Processor Interface
        5. 2.2.1.5 Gate Drive Shutdown Path
        6. 2.2.1.6 System Diagnostic Measurements
          1. 2.2.1.6.1 Temperature Measurement
        7. 2.2.1.7 System Power Supply
          1. 2.2.1.7.1 12V Rail
          2. 2.2.1.7.2 3.3V Rail
      2. 2.2.2 Software Design
    3. 2.3 Highlighted Products
      1. 2.3.1 DRV8162L
      2. 2.3.2 INA241A
      3. 2.3.3 AMC0106M05
      4. 2.3.4 TPSM861253
      5. 2.3.5 LMR38010
      6. 2.3.6 TMP6131
      7. 2.3.7 ISOM8710
  9. 3Hardware, Software Test Requirements and Test Results
    1. 3.1 Hardware Requirements
      1. 3.1.1 PCB Overview
      2. 3.1.2 Hardware Configuration
        1. 3.1.2.1 Prerequisites
        2. 3.1.2.2 Default Resistor and Jumper Configuration
        3. 3.1.2.3 Connector
          1. 3.1.2.3.1 Host Processor Interface
    2. 3.2 Test Setup
    3. 3.3 Test Results
      1. 3.3.1 Power Management
        1. 3.3.1.1 Power Up
        2. 3.3.1.2 Power Down
      2. 3.3.2 Gate Voltage and Phase Voltage
        1. 3.3.2.1 20 VDC
        2. 3.3.2.2 48 VDC
        3. 3.3.2.3 60 VDC
      3. 3.3.3 Digital PWM and Gate Voltage
      4. 3.3.4 Phase-Current Measurements
      5. 3.3.5 System Test Results
        1. 3.3.5.1 Thermal Analysis
  10. 4Design and Documentation Support
    1. 4.1 Design Files
      1. 4.1.1 Schematics
      2. 4.1.2 BOM
    2. 4.2 Tools and Software
    3. 4.3 Documentation Support
    4. 4.4 Support Resources
    5. 4.5 Trademarks
  11. 5About the Authors
  12. 6Revision History
2.2.1.2.1 VGS versus RDS(ON)

The VGVDD and VGVDD_SL voltages can define the ON state VGS, or the actual high level gate voltage of the FETs in an application.

This value can be used to find the RDS(ON) of the FET at the given voltage. The RDS(ON) is needed in defining the overcurrent trip level of the DRV8162L.

With these considerations, calculation of the FET chosen is made and the results are shown in Table 2-1. This design implements two parallel FETs to achieve lower RDS(ON) and enable high-current output. The calculation is done using Ohm's law.

Table 2-1 Overcurrent Trip Level of DRV8162L with Regards to NTMTSC1D6N10 VDS
PARAMETERNTMTSC1D6N102 × NTMTSC1D6N10
ID267A534A
IDM900A1800A
QG106nC212nC
Junction Temperature25°C125°C25°C125°C
RDS(ON)

at VGS = 10V

1.42mΩ2.50mΩ0.71mΩ0.88mΩ
TRIP

LEVEL1-0: 0.15V

106A

60A

211A

120A

TRIP LEVEL1-1: 0.2V

141A

80A

282A

160A

When using fast switching FETs, RC snubber networks can be necessary for each half bridge to suppress ringing of the circuit. This design reserves an RC snubber for every half bridge as an option for test and debug, although these are not needed for the test cases.