Product details

Rating Catalog Control method External Control Architecture Gate Driver Control interface 6xPWM, 3xPWM Vs (Min) (V) 4.5 Vs ABS (Max) (V) 65 Features Bootstrap Architecture for Gate Driver, Supports 100% PWM Duty Cycle with Trickle Charge Pump, HW based configuration Operating temperature range (C) -40 to 125
Rating Catalog Control method External Control Architecture Gate Driver Control interface 6xPWM, 3xPWM Vs (Min) (V) 4.5 Vs ABS (Max) (V) 65 Features Bootstrap Architecture for Gate Driver, Supports 100% PWM Duty Cycle with Trickle Charge Pump, HW based configuration Operating temperature range (C) -40 to 125
WQFN (RUY) 28 16 mm² 4 x 4
  • 65-V Three Phase Half-Bridge Gate Driver
    • Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS)
    • 4.5 to 60-V Operating Voltage Range
    • Supports 100% PWM Duty Cycle with Trickle Charge pump
  • Bootstrap based Gate Driver Architecture
    • 1000-mA Maximum Peak Source Current
    • 2000-mA Maximum Peak Sink Current
  • Hardware interface provides simple configuration
  • Ultra-low power sleep mode <1uA at 25 ̊C
  • 4-ns (typ) propagation delay matching between phases
  • Independent driver shutdown path (DRVOFF)
  • 65-V tolerant wake pin (nSLEEP)
  • Supports negative transients upto -10-V on SHx
  • 6x and 3x PWM Modes
  • Supports 3.3-V, and 5-V Logic Inputs
  • Accurate LDO (AVDD), 3.3V ±3%, 80 mA
  • Compact QFN Packages and Footprints
  • Adjustable VDS overcurrent threshold through VDSLVL pin
  • Adjustable deadtime through DT pin
  • Efficient System Design With Power Blocks
  • Integrated Protection Features
    • PVDD Undervoltage Lockout (PVDDUV)
    • GVDD Undervoltage (GVDDUV)
    • Bootstrap Undervoltage (BST_UV)
    • Overcurrent Protection (VDS_OCP, SEN_OCP)
    • Thermal Shutdown (OTSD)
    • Fault Condition Indicator (nFAULT)
  • 65-V Three Phase Half-Bridge Gate Driver
    • Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS)
    • 4.5 to 60-V Operating Voltage Range
    • Supports 100% PWM Duty Cycle with Trickle Charge pump
  • Bootstrap based Gate Driver Architecture
    • 1000-mA Maximum Peak Source Current
    • 2000-mA Maximum Peak Sink Current
  • Hardware interface provides simple configuration
  • Ultra-low power sleep mode <1uA at 25 ̊C
  • 4-ns (typ) propagation delay matching between phases
  • Independent driver shutdown path (DRVOFF)
  • 65-V tolerant wake pin (nSLEEP)
  • Supports negative transients upto -10-V on SHx
  • 6x and 3x PWM Modes
  • Supports 3.3-V, and 5-V Logic Inputs
  • Accurate LDO (AVDD), 3.3V ±3%, 80 mA
  • Compact QFN Packages and Footprints
  • Adjustable VDS overcurrent threshold through VDSLVL pin
  • Adjustable deadtime through DT pin
  • Efficient System Design With Power Blocks
  • Integrated Protection Features
    • PVDD Undervoltage Lockout (PVDDUV)
    • GVDD Undervoltage (GVDDUV)
    • Bootstrap Undervoltage (BST_UV)
    • Overcurrent Protection (VDS_OCP, SEN_OCP)
    • Thermal Shutdown (OTSD)
    • Fault Condition Indicator (nFAULT)

The DRV8328 family of devices is an integrated gate driver for three-phase applications. The devices provide three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The device generates the correct gate drive voltages using in internal charge pump and enhances the high-side MOSFETs using a bootstrap circuit. A trickle charge pump is included to support 100% duty cycle. The Gate Drive architecture supports peak gate drive currents up to 1-A source and 2-A sink. The DRV8328 can operate from a single power supply and supports a wide input supply range of 4.5 to 60 V.

The 6x and 3x PWM modes allow for simple interfacing to controller circuits. DRV8328C and DRV8328D variants has integrated accurate 3.3-V LDO that can be used to power external controller and can be used as reference for CSA. The configuration settings for the gate driver and device are configurable through hardware (H/W) pins.

A low-power sleep mode is provided to achieve low quiescent current draw by shutting down most of the internal circuitry. Internal protection functions are provided for undervoltage lockout, GVDD fault, MOSFET overcurrent, MOSFET short circuit, and overtemperature. Fault conditions are indicated on the nFAULT pin.

The DRV8328 family of devices is an integrated gate driver for three-phase applications. The devices provide three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The device generates the correct gate drive voltages using in internal charge pump and enhances the high-side MOSFETs using a bootstrap circuit. A trickle charge pump is included to support 100% duty cycle. The Gate Drive architecture supports peak gate drive currents up to 1-A source and 2-A sink. The DRV8328 can operate from a single power supply and supports a wide input supply range of 4.5 to 60 V.

The 6x and 3x PWM modes allow for simple interfacing to controller circuits. DRV8328C and DRV8328D variants has integrated accurate 3.3-V LDO that can be used to power external controller and can be used as reference for CSA. The configuration settings for the gate driver and device are configurable through hardware (H/W) pins.

A low-power sleep mode is provided to achieve low quiescent current draw by shutting down most of the internal circuitry. Internal protection functions are provided for undervoltage lockout, GVDD fault, MOSFET overcurrent, MOSFET short circuit, and overtemperature. Fault conditions are indicated on the nFAULT pin.

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Technical documentation

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Type Title Date
* Data sheet DRV8328 4.5 to 60V Three-phase BLDC Gate Driver datasheet 02 Aug 2019
Certificate DRV8328AEVM EU RoHS Declaration of Conformity (DoC) 09 Dec 2021
User guide DRV8328AEVM User's Guide 08 Nov 2021
Technical article Understanding brushless-DC motor systems, part 2 20 Oct 2021
Technical article Understanding brushless-DC motor systems, part 1 18 Oct 2021
Technical article A basic brushless gate driver design – part 3: integrated vs. discrete half bridges 16 Dec 2020
Technical article Connectivity helps integrate intelligent motor control on a single MCU 06 Jun 2018

Design & development

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Evaluation board

DRV8328AEVM — DRV8328A three-phase PWM motor driver evaluation module

The DRV8328AEVM is a 30-A, 3-phase brushless DC drive stage based on the DRV8328A gate driver for BLDC motors. The DRV8328 incorporates three diodes for bootstrap operation without the need for external diodes. The EVM includes a current shunt amplifier for low-side current measurement as well as (...)

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