Product details

Number of full bridges 1 Vs (Min) (V) 4.5 Vs ABS (Max) (V) 40 Sleep current (uA) 2.5 Control mode Independent 1/2-Bridge, PH/EN, PWM Control interface Hardware (GPIO), SPI Features Inline Current Sense Amplifier, Smart Gate Drive Rating Automotive TI functional safety category Functional Safety-Capable Operating temperature range (C) -40 to 125
Number of full bridges 1 Vs (Min) (V) 4.5 Vs ABS (Max) (V) 40 Sleep current (uA) 2.5 Control mode Independent 1/2-Bridge, PH/EN, PWM Control interface Hardware (GPIO), SPI Features Inline Current Sense Amplifier, Smart Gate Drive Rating Automotive TI functional safety category Functional Safety-Capable Operating temperature range (C) -40 to 125
VQFN (RHB) 32 25 mm² 5 x 5
  • AEC-Q100 qualified for automotive applications:
    • Temperature grade 1: –40°C to +125°C, TA
  • Functional Safety-Capable
  • H-bridge smart gate driver
    • 4.9-V to 37-V (40-V abs. max) operating range
    • Doubler charge pump for 100% PWM
    • Half-bridge and H-bridge control modes
  • Pin to pin gate driver variants
  • Smart gate drive architecture
    • Adjustable slew rate control
    • 0.5-mA to 62-mA peak source current output
    • 0.5-mA to 62-mA peak sink current output
    • Integrated dead-time handshaking
  • Wide common mode current shunt amplifier
    • Supports inline, high-side, or low-side
    • Adjustable gain settings (10, 20, 40, 80 V/V)
    • Integrated feedback resistors
    • Adjustable PWM blanking scheme
  • Multiple interface options available
    • SPI: Detailed configuration and diagnostics
    • H/W: Simplified control and less MCU pins
  • Spread spectrum clocking for EMI reduction
  • Compact VQFN package with wettable flanks
  • Integrated protection features
    • Dedicated driver disable pin (DRVOFF)
    • Supply and regulator voltage monitors
    • MOSFET VDS overcurrent monitors
    • MOSFET VGS gate fault monitors
    • Charge pump for reverse polarity MOSFET
    • Offline open load and short circuit diagnostics
    • Device thermal warning and shutdown
    • Fault condition interrupt pin (nFAULT)
  • AEC-Q100 qualified for automotive applications:
    • Temperature grade 1: –40°C to +125°C, TA
  • Functional Safety-Capable
  • H-bridge smart gate driver
    • 4.9-V to 37-V (40-V abs. max) operating range
    • Doubler charge pump for 100% PWM
    • Half-bridge and H-bridge control modes
  • Pin to pin gate driver variants
  • Smart gate drive architecture
    • Adjustable slew rate control
    • 0.5-mA to 62-mA peak source current output
    • 0.5-mA to 62-mA peak sink current output
    • Integrated dead-time handshaking
  • Wide common mode current shunt amplifier
    • Supports inline, high-side, or low-side
    • Adjustable gain settings (10, 20, 40, 80 V/V)
    • Integrated feedback resistors
    • Adjustable PWM blanking scheme
  • Multiple interface options available
    • SPI: Detailed configuration and diagnostics
    • H/W: Simplified control and less MCU pins
  • Spread spectrum clocking for EMI reduction
  • Compact VQFN package with wettable flanks
  • Integrated protection features
    • Dedicated driver disable pin (DRVOFF)
    • Supply and regulator voltage monitors
    • MOSFET VDS overcurrent monitors
    • MOSFET VGS gate fault monitors
    • Charge pump for reverse polarity MOSFET
    • Offline open load and short circuit diagnostics
    • Device thermal warning and shutdown
    • Fault condition interrupt pin (nFAULT)

The DRV8706-Q1 is a highly integrated H-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive voltages using an integrated doubler charge pump for the high-side and a linear regulator for the low-side.

The device uses a smart gate drive architecture to reduce system cost and improve reliability. The gate driver optimizes dead time to avoid shoot-through conditions, provides control to decreasing electromagnetic interference (EMI) through adjustable gate drive current, and protects against drain to source and gate short conditions with VDS and VGS monitors.

A wide common mode shunt amplifier provides inline current sensing to continuously measure motor current even during recirculating windows. The amplifier can be used in low-side or high-side sense configurations if inline sensing is not required.

The DRV8706-Q1 provide an array of protection features to ensure robust system operation. These include under and overvoltage monitors for the power supply and charge pump, VDS overcurrent and VGS gate fault monitors for the external MOSFETs, offline open load and short circuit diagnostics, and internal thermal warning and shutdown protection.

The DRV8706-Q1 is a highly integrated H-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive voltages using an integrated doubler charge pump for the high-side and a linear regulator for the low-side.

The device uses a smart gate drive architecture to reduce system cost and improve reliability. The gate driver optimizes dead time to avoid shoot-through conditions, provides control to decreasing electromagnetic interference (EMI) through adjustable gate drive current, and protects against drain to source and gate short conditions with VDS and VGS monitors.

A wide common mode shunt amplifier provides inline current sensing to continuously measure motor current even during recirculating windows. The amplifier can be used in low-side or high-side sense configurations if inline sensing is not required.

The DRV8706-Q1 provide an array of protection features to ensure robust system operation. These include under and overvoltage monitors for the power supply and charge pump, VDS overcurrent and VGS gate fault monitors for the external MOSFETs, offline open load and short circuit diagnostics, and internal thermal warning and shutdown protection.

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Technical documentation

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Type Title Date
* Data sheet DRV8706-Q1 Automotive H-Bridge Smart Gate Driver With Wide Common Mode Inline Current Sense Amplifier datasheet (Rev. A) 15 Apr 2021
More literature TI Motor Drives Automotive Body Motors Webinar 02 Jul 2021
Application note Daisy Chain Implementation for Serial Peripheral Interface (Rev. A) 07 Apr 2021
Application note Understanding Smart Gate Drive (Rev. D) 01 Mar 2021
Functional safety information DRV8706-Q1 Functional Safety, FIT Rate, Failure Mode Distribution and Pin FMA 17 Feb 2021
Application note Methods to Configure Current Regulation for Brushed and Stepper Motors (Rev. B) 19 Jan 2021
Technical article How analog integration simplifies automotive body motor controller designs 23 Oct 2020
Application note Benefits of a Wide Common Mode, Differential Current Shunt Amplifier 08 Sep 2020
Application note Detecting Short to Battery and Ground Conditions with TI Motor Gate Drivers 29 May 2020
Application note Open Load Detection in Intergrated Drivers (Rev. A) 07 Nov 2019
White paper Smart Gate Drive 02 Jul 2019
Application note Protecting Automotive Motor Drive Systems from Reverse Polarity Conditions (Rev. A) 19 Feb 2019
Application note External or internal FETs for motor drive in automotive applications (Rev. A) 11 Feb 2019
Application note Cut-Off Switch in High-Current Motor-Drive Applications (Rev. A) 20 Aug 2018
Technical article Why are you still driving automotive motors with relays? 13 Jul 2017
Technical article The story of motor-drive integration 09 Jan 2017
Application note Relay Replacement for Brushed DC Motor Drive in Automotive Applications 14 Nov 2016
Technical article How to create a dynamic power solution for stepper motors, relays and LEDs 01 Nov 2016

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

DRV8706H-Q1EVM — Automotive half-bridge smart gate driver evaluation module with wide common mode current sense amp

The DRV8706H-Q1EVM is designed to evaluate the DRV8706H-Q1, which is an integrated, automotive qualified brushed DC motor driver.  The DRV8706H-Q1 is a highly integrated H-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive (...)

In stock
Limit: 5
Evaluation board

DRV8706S-Q1EVM — Automotive H-bridge smart gate driver EVM with wide common mode current sense amplifier

The DRV8706S-Q1EVM is designed to evaluate the DRV8706S-Q1, which is an integrated, automotive qualified brushed DC motor driver. The DRV8706S-Q1 is a highly integrated H-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive (...)

In stock
Limit: 5
Simulation model

DRV8701E Transient Simulation Model (Rev. A)

SLVMAR3A.ZIP (90 KB) - PSpice Model
Package Pins Download
VQFN (RHB) 32 View options

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