The UCC21711-Q1 is a galvanic isolated single
channel gate driver designed for up to 1700-V SiC MOSFETs and IGBTs with advanced
protection features, best-in-class dynamic performance and robustness. UCC21711-Q1 has up to ±10A peak source and sink
current.
The input side is
isolated from the output side with SiO2 capacitive isolation technology,
supporting up to 1.5kVRMS working voltage, 12.8kVPK surge
immunity with longer than 40 years Isolation barrier life, as well as providing low
part-to-part skew , and >150V/ns common mode noise immunity
(CMTI).
The UCC21711-Q1 includes the
state-of-the-art protection features, such as fast overcurrent and short circuit
detection, shunt current sensing support, fault reporting, active Miller clamp, and
input and output side power supply UVLO to optimize SiC and IGBT switching behavior
and robustness. The isolated analog to PWM sensor can be used for easier temperature
or voltage sensing, further increasing the drivers versatility and simplifying the
system design effort, size and cost.
The UCC21711-Q1 is a galvanic isolated single
channel gate driver designed for up to 1700-V SiC MOSFETs and IGBTs with advanced
protection features, best-in-class dynamic performance and robustness. UCC21711-Q1 has up to ±10A peak source and sink
current.
The input side is
isolated from the output side with SiO2 capacitive isolation technology,
supporting up to 1.5kVRMS working voltage, 12.8kVPK surge
immunity with longer than 40 years Isolation barrier life, as well as providing low
part-to-part skew , and >150V/ns common mode noise immunity
(CMTI).
The UCC21711-Q1 includes the
state-of-the-art protection features, such as fast overcurrent and short circuit
detection, shunt current sensing support, fault reporting, active Miller clamp, and
input and output side power supply UVLO to optimize SiC and IGBT switching behavior
and robustness. The isolated analog to PWM sensor can be used for easier temperature
or voltage sensing, further increasing the drivers versatility and simplifying the
system design effort, size and cost.