홈 전력 관리 게이트 드라이버 절연 게이트 드라이버
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전력 관리
게이트 드라이버
절연 게이트 드라이버

ISO5852S-Q1

활성

분할 출력 및 활성 보호를 지원하는 오토모티브 5.7kVrms, 2.5A/5A 단일 채널 절연 게이트 드라이버

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UCC21750-Q1 활성 IGBT/SiC용 DESAT 및 내부 클램프를 지원하는 오토모티브 5.7kVrms, ±10A 단일 채널 절연 게이트 드라이버 Newer generation, integrated Analog-to-PWM sensor

ISO5852S-Q1

활성
데이터 시트 지금 주문하기

제품 상세 정보

Number of channels 1 Isolation rating Reinforced Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (A) 5 Peak output current (source) (typ) (A) 2.5 Peak output current (sink) (typ) (A) 5 Features Active miller clamp, Fault reporting, Power good, Short circuit protection, Soft turn-off, Soft turnoff, Split output Output VCC/VDD (min) (V) 15 Output VCC/VDD (max) (V) 30 Input supply voltage (min) (V) 2.25 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.076 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 18 Fall time (ns) 20 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Reinforced Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (A) 5 Peak output current (source) (typ) (A) 2.5 Peak output current (sink) (typ) (A) 5 Features Active miller clamp, Fault reporting, Power good, Short circuit protection, Soft turn-off, Soft turnoff, Split output Output VCC/VDD (min) (V) 15 Output VCC/VDD (max) (V) 30 Input supply voltage (min) (V) 2.25 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.076 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 18 Fall time (ns) 20 Undervoltage lockout (typ) (V) 12
SOIC (DW) 16 106.09 mm² (10.3 mm × 10.3 mm)
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
    • Device HBM Classification Level 3A
    • Device CDM Classification Level C6
  • 100-kV/μs Minimum Common-Mode Transient Immunity (CMTI) at VCM = 1500 V
  • Split Outputs to Provide 2.5-A Peak Source and
    5-A Peak Sink Currents
  • Short Propagation Delay: 76 ns (Typ),
    110 ns (Max)
  • 2-A Active Miller Clamp
  • Output Short-Circuit Clamp
  • Soft Turn-Off (STO) during Short Circuit
  • Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
  • Input and Output Undervoltage Lockout (UVLO) with Ready (RDY) Pin Indication
  • Active Output Pulldown and Default Low Outputs with Low Supply or Floating Inputs
  • 2.25-V to 5.5-V Input Supply Voltage
  • 15-V to 30-V Output Driver Supply Voltage
  • CMOS Compatible Inputs
  • Rejects Input Pulses and Noise Transients Shorter Than 20 ns
  • Isolation Surge Withstand Voltage 12800-VPK
  • Safety-Related Certifications:
    • 8000-VPK VIOTM and 2121-VPK VIORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
    • 5700-VRMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
    • TUV Certification per EN 61010-1 and EN 60950-1
    • GB4943.1-2011 CQC Certification
    • All Certifications Complete per UL, VDE, CQC, TUV and Planned for CSA

All trademarks are the property of their respective owners.

  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
    • Device HBM Classification Level 3A
    • Device CDM Classification Level C6
  • 100-kV/μs Minimum Common-Mode Transient Immunity (CMTI) at VCM = 1500 V
  • Split Outputs to Provide 2.5-A Peak Source and
    5-A Peak Sink Currents
  • Short Propagation Delay: 76 ns (Typ),
    110 ns (Max)
  • 2-A Active Miller Clamp
  • Output Short-Circuit Clamp
  • Soft Turn-Off (STO) during Short Circuit
  • Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
  • Input and Output Undervoltage Lockout (UVLO) with Ready (RDY) Pin Indication
  • Active Output Pulldown and Default Low Outputs with Low Supply or Floating Inputs
  • 2.25-V to 5.5-V Input Supply Voltage
  • 15-V to 30-V Output Driver Supply Voltage
  • CMOS Compatible Inputs
  • Rejects Input Pulses and Noise Transients Shorter Than 20 ns
  • Isolation Surge Withstand Voltage 12800-VPK
  • Safety-Related Certifications:
    • 8000-VPK VIOTM and 2121-VPK VIORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
    • 5700-VRMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
    • TUV Certification per EN 61010-1 and EN 60950-1
    • GB4943.1-2011 CQC Certification
    • All Certifications Complete per UL, VDE, CQC, TUV and Planned for CSA

All trademarks are the property of their respective owners.

The ISO5852S-Q1 device is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input side operates from a single 2.25-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns provides accurate control of the output stage.

An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overcurrent condition. Upon a DESAT detect, a mute logic immediately blocks the output of the isolator and initiates a soft-turnoff procedure which disables the OUTH pin and pulls the OUTL pin to low over a time span of 2 μs. When the OUTL pin reaches 2 V with respect to the most-negative supply potential, VEE2, the gate-driver output is pulled hard to the VEE2 potential, turning the IGBT immediately off.

When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. Mute logic is activated through the soft-turnoff period. The FLT output condition is latched and can be reset only after the RDY pin goes high, through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with a bipolar output supply, the output is hard clamp to VEE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low-impedance path which prevents the IGBT from dynamic turnon during high-voltage transient conditions.

The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input-side and output-side supplies. If either side has insufficient supply, the RDY output goes low, otherwise this output is high.

The ISO5852S-Q1 device is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.

For all available packages, see the orderable addendum at the end of the data sheet.

The ISO5852S-Q1 device is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input side operates from a single 2.25-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns provides accurate control of the output stage.

An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overcurrent condition. Upon a DESAT detect, a mute logic immediately blocks the output of the isolator and initiates a soft-turnoff procedure which disables the OUTH pin and pulls the OUTL pin to low over a time span of 2 μs. When the OUTL pin reaches 2 V with respect to the most-negative supply potential, VEE2, the gate-driver output is pulled hard to the VEE2 potential, turning the IGBT immediately off.

When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. Mute logic is activated through the soft-turnoff period. The FLT output condition is latched and can be reset only after the RDY pin goes high, through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with a bipolar output supply, the output is hard clamp to VEE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low-impedance path which prevents the IGBT from dynamic turnon during high-voltage transient conditions.

The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input-side and output-side supplies. If either side has insufficient supply, the RDY output goes low, otherwise this output is high.

The ISO5852S-Q1 device is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.

For all available packages, see the orderable addendum at the end of the data sheet.
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14개 모두 보기
상위 문서 유형 직함 형식 옵션 최신 영어 버전 다운로드 날짜
* 데이터 시트 ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features datasheet (Rev. A) PDF | HTML 2016. 12. 22
인증서 VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. AB) 2026. 7. 15
EVM User's guide UCC2181xx, UCC217xx, and ISO5x5x Evaluation Module (Rev. A) PDF | HTML 2026. 6. 8
인증서 TUV Certificate for Isolation Devices (Rev. M) 2026. 5. 7
인증서 UL Certificate of Compliance File E181974 Vol 4 Sec 6 (Rev. S) 2026. 5. 7
애플리케이션 노트 Choosing Appropriate Protection Approach for IGBT and SiC Power Modules PDF | HTML 2024. 7. 19
인증서 ISO5x5x CQC Certificate of Product Certification PDF | HTML 2023. 11. 7
인증서 ISO5451 CQC Certificate of Product Certification PDF | HTML 2023. 8. 16
애플리케이션 노트 Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 2022. 2. 17
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 2021. 12. 16
인증서 CSA Certification (Rev. Q) 2021. 6. 14
Application brief External Gate Resistor Selection Guide (Rev. A) 2020. 2. 28
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020. 2. 28
애플리케이션 노트 Isolation Glossary (Rev. A) 2017. 9. 19

설계 및 개발

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평가 보드

ISO5852SEVM — 강화 절연 IGBT 게이트 드라이버 평가 모듈

This evaluation module, featuring ISO5852S reinforced isolated gate driver device, allows designers to evaluate device AC and DC performance with a pre-populated 1-nF load or with a user-installed IGBT in either of the standard TO-247 or TO-220 packages.

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시뮬레이션 모델

ISO5852S Unencrypted PSPICE Transient Model

SLLM446.ZIP (4 KB) - PSpice 모델
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레퍼런스 디자인

TIDA-00794 — HEV/EV 트랙션 인버터용 IGBT 모듈 열 보호 레퍼런스 설계

TIDA-00794 레퍼런스 설계는 HEV/EV 트랙션 인버터 시스템의 IGBT 열 보호를 위한 온도 감지 솔루션입니다. IGBT 모듈 내부에 통합된 NTC 서미스터를 통해 IGBT 온도를 모니터링합니다. NTC 서미스터 온도가 프로그래밍된 임계값을 초과하면 IGBT 게이트 드라이버에 열 셧다운을 수행합니다. 이 설계에는 IGBT 절연 게이트 드라이버, 고전압 절연, NTC 신호 컨디셔닝, 부하 저항 및 MSP430에 대한 I2C 인터페이스가 포함되어 있어 설계 시스템을 높은 전력 정격에서 독립적으로 실행할 수 있습니다.

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레퍼런스 디자인

TIDA-020014 — 3가지 유형의 IGBT/SiC 바이어스-공급 솔루션을 사용한 HEV/EV 트랙션 인버터 전력계 레퍼런스 설계

이 레퍼런스 디자인은 하이브리드 전기 자동차 및 전기 자동차(HEV/EV) 시스템을 위한 12V 자동차 배터리 입력, 4.2W 바이어스 공급 솔루션을 갖춘 트랙션 인버터 단상 전원 단계를 제시합니다. 모든 바이어스 전원 솔루션은 12V 자동차 배터리에서 4.5V~42V DC의 넓은 입력 범위를 허용하고, +15V, -8V 또는 +20V, -4V구성 및 최대 180mA의 출력 전류를 생성합니다. 이 전력계는 5.7kVRMS 강화 절연을 지원하고 SiC/IGBT 하프 브리지 모듈에 맞는 100mm x 62mm 폼 팩터로 설계된 절연 (...)
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