LMG3104R017
- 100V GaN power stage with integrated driver: (GaN FET RDS(ON) options: 1.1mΩ and 1.7mΩ)
- Integrated high-side level shift and bootstrap
- Two LMG310xR0xx can form a half-bridge
- No external level shifter is required
- Efficient and high-density power conversion with
- Ultra-low propagation delay (20ns) and matching (7ns)
- Independent turn-on and turn-off slew-rate control for the GaN FET
- Zero-voltage detection (ZVD) reporting for dead-time optimization
- Ideal diode mode turn-on (IDM) and turn-off (zero current detection ZCD) to reduce third quadrant losses in soft switching application
- Input control flexibility
- Independent input mode (IIM) control
- Single PWM input with resistor programmable dead time option for IO-limited controllers
- Robust protection
- Interlock protection in IIM (LMG3104R0xx)
- Internal bootstrap supply voltage regulation to prevent GaN FET overdrive
- VDS monitoring based cycle-by-cycle short-circuit protection
- Fault indication for overtemperature, supply undervoltage, and short-circuit events
- External bias power supply: 5V
- Supports 3.3V and 5V input logic levels
- Parasitic optimized QFN package with exposed top pad to support top-side cooling
The LMG310xR0xx devices are a family of 100V enhancement-mode Gallium Nitride (GaN) HEMT with integrated high frequency driver. The LMG310xR0xx incorporates a high side level shifter and bootstrap circuit, so that two LMG310xR0xx devices can be used to form a half bridge without an additional level shifter. LMG3104R0xx offers logic input interlock in Independent Input Mode (IIM).
GaN FETs provide significant advantages for power conversion as GaN FETs have zero reverse recovery, very small input capacitance CISS, and output capacitance COSS. The driver and the GaN FET are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG310xR0xx device is available in a 6.5mm × 4mm lead-free package and can be easily mounted on PCBs.
The TTL logic compatible inputs support 3.3V and 5V logic levels, regardless of the VCC voltage. A proprietary bootstrap voltage control technique regulates the gate voltages of the enhancement mode GaN FETs within the safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. The device is an excellent option for applications requiring high-frequency, high-efficiency operation in a small form factor.
기술 자료
| 상위 문서 | 유형 | 직함 | 형식 옵션 | 날짜 |
|---|---|---|---|---|
| * | Data sheet | LMG310xR0xx 100V GaN Power Stage With Integrated Protection and Smart-Switching Features datasheet | PDF | HTML | 2026/05/21 |
설계 및 개발
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| 패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
|---|---|---|
| VQFN-FCRLF (VBE) | 15 | Ultra Librarian |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치