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半橋式驅動器

LMG1205

現行

適用於 GaNFET 和 MOSFET 且具有 5-V UVLO 的 1.2-A、5-A 90-V、半橋閘極驅動器

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產品規格表

LMG1205

現行
產品規格表 立即訂購

產品詳細資料

Power switch GaNFET, MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 5.5 Peak output current (A) 5 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 4 Rating Catalog Propagation delay time (µs) 0.035 Rise time (ns) 7 Fall time (ns) 3.5 Iq (mA) 0.09 Input threshold TTL Channel input logic TTL Switch node voltage (V) -5 Features Bootstrap supply voltage clamp, Split outputs on high and low side Driver configuration Half bridge
Power switch GaNFET, MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 5.5 Peak output current (A) 5 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 4 Rating Catalog Propagation delay time (µs) 0.035 Rise time (ns) 7 Fall time (ns) 3.5 Iq (mA) 0.09 Input threshold TTL Channel input logic TTL Switch node voltage (V) -5 Features Bootstrap supply voltage clamp, Split outputs on high and low side Driver configuration Half bridge
DSBGA (YFX) 12 3.24 mm² 1.8 x 1.8
  • Independent high-side and low-side TTL logic inputs
  • 1.2-A peak source, 5-A sink current
  • High-side floating bias voltage rail operates up to 100 VDC
  • Internal bootstrap supply voltage clamping
  • Split outputs for adjustable turnon, turnoff strength
  • 0.6-Ω pulldown, 2.1-Ω pullup resistance
  • Fast propagation times (35 ns typical)
  • Excellent propagation delay matching (1.5 ns typical)
  • Supply rail undervoltage lockout
  • Low power consumption
  • Independent high-side and low-side TTL logic inputs
  • 1.2-A peak source, 5-A sink current
  • High-side floating bias voltage rail operates up to 100 VDC
  • Internal bootstrap supply voltage clamping
  • Split outputs for adjustable turnon, turnoff strength
  • 0.6-Ω pulldown, 2.1-Ω pullup resistance
  • Fast propagation times (35 ns typical)
  • Excellent propagation delay matching (1.5 ns typical)
  • Supply rail undervoltage lockout
  • Low power consumption

The LMG1205 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LMG1205 are TTL logic compatible and can withstand input voltages up to 14 V regardless of the VDD voltage. The LMG1205 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

In addition, the strong sink capability of the LMG1205 maintains the gate in the low state, preventing unintended turnon during switching. The LMG1205 can operate up to several MHz. The LMG1205 is available in a 12-pin DSBGA package that offers a compact footprint and minimized package inductance.

The LMG1205 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LMG1205 are TTL logic compatible and can withstand input voltages up to 14 V regardless of the VDD voltage. The LMG1205 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

In addition, the strong sink capability of the LMG1205 maintains the gate in the low state, preventing unintended turnon during switching. The LMG1205 can operate up to several MHz. The LMG1205 is available in a 12-pin DSBGA package that offers a compact footprint and minimized package inductance.
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LMG1210 現行 適用 GaNFET 和 MOSFET 的 1.5A、3A、200V 半橋閘極驅動器、5V UVLO 和可編程失效時間 This product offers superior switching performance (10-ns prop delay, 1-ns delay matching), resistor-programmable deadtime, an internal LDO, and 300-V/ns CMTI.

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類型 標題 日期
* Data sheet LMG1205 100-V, 1.2-A to 5-A, Half Bridge GaN Driver with Integrated Bootstrap Diode datasheet (Rev. B) PDF | HTML 2023年 4月 14日
Application note Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 2024年 3月 25日
Application note Implementing Bootstrap Overcharge Prevention in GaN Half-bridge Circuits PDF | HTML 2023年 11月 15日
Application note Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 2023年 9月 8日
Application brief GaN Applications PDF | HTML 2022年 8月 10日
Application brief GaN Driver Schematic and Layout Recommendations PDF | HTML 2022年 8月 10日
Application brief Key Parameters and Driving Requirements of GaN FETs PDF | HTML 2022年 8月 4日
Application brief Nomenclature, Types, and Structure of GaN Transistors PDF | HTML 2022年 8月 4日
Application brief How GaN Enables More Efficient and Reduced Form Factor Power Supplies PDF | HTML 2022年 8月 2日
Application brief External Gate Resistor Selection Guide (Rev. A) 2020年 2月 28日
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020年 2月 28日
Application note GaN Gate Driver Layout Help 2019年 5月 23日
White paper Optimizing multi-megahertz GaN driver design white paper (Rev. A) 2018年 11月 27日
EVM User's guide Using the LMG1205HBEVM 2017年 3月 22日
White paper A comprehensive methodology to qualify the reliability of GaN products 2015年 3月 2日

設計與開發

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開發板

LMG1205HBEVM — LMG1205 GaN 功率級評估模組

80-V 10A Power Stage EVM - The LMG1205 half-bridge EVM board is a small, easy to use, power stage with an external PWM signal. The EVM is suitable for evaluating the performance of the LMG1205 driving a GaN half-bridge in many different DC-DC converter topologies. It can be used to estimate the (...)

使用指南: PDF
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模擬型號

LMG1205 PSpice Transient Model (Rev. A)

SNOM624A.ZIP (35 KB) - PSpice Model
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模擬型號

LMG1205 TINA-TI Reference Design (Rev. A)

SNOM622A.TSC (131 KB) - TINA-TI Reference Design
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模擬型號

LMG1205 TINA-TI Transient Spice Model (Rev. A)

SNOM621A.ZIP (9 KB) - TINA-TI Spice Model
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計算工具

SNOR034 — LMG1205 Component Design Calculator and Schematic Review

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產品
半橋式驅動器
LMG1205 — 適用於 GaNFET 和 MOSFET 且具有 5-V UVLO 的 1.2-A、5-A 90-V、半橋閘極驅動器
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模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
要求
封裝 針腳 CAD 符號、佔位空間與 3D 模型
DSBGA (YFX) 12 Ultra Librarian
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