ONET2804TLP
- 4-Channel Multi-Rate Operation: Up to 28 Gbps
- Dissipation at a 3-V Supply: 90 mW per Channel
- Differential Transimpedance: 7.5 kΩ
- Bandwidth: 17.5 GHz
- Input-Referred Noise: 2 µArms
- Input Overload Current: 3.2 mAPP
- Programmable Output Voltage
- Adjustable Gain and Bandwidth
- Received Signal Strength Indicator (RSSI) for Each Channel
- Isolation Between Channels (Die Only): 40 dB
- Single Supply: 2.8 V to 3.3 V
- Pad Control or 2-Wire Control
- On-Chip Filter Capacitors
- –40°C to +100°C Operation
- Die Size: 3250 µm × 1450 µm, 750-µm Channel Pitch
The ONET2804TLP device is a high-gain, limiting transimpedance amplifier (TIA) for parallel optical interconnects with data rates up to 28 Gbps. The device is used in conjunction with a 750-µm pitch photodiode array to convert an optical signal into a differential output voltage. An internal circuit provides the photodiode reverse bias voltage and senses the average photocurrent supplied to each photodiode.
The device can be used with pin control or a two-wire serial interface to allow control of the output amplitude, gain, bandwidth, and input threshold.
The ONET2804TLP provides 17.5-GHz bandwidth, a gain of 7.5 kΩ, an input-referred noise of 2 µArms, and a received signal strength indicator (RSSI) for each channel. 40-dB isolation between channels results in low crosstalk penalty in the receiver.
The device requires a single 2.8-V to 3.3-V supply and typically dissipates 90 mW per channel with a differential output amplitude of 300 mVPP. The device is characterized for operation from –40°C to +100°C and is available in die form with a 750-µm channel pitch.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | ONET2804TLP Low-Power, 28-Gbps, 4-Channel Limiting TIA datasheet | PDF | HTML | 2017/7/13 |
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|---|---|---|
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