SLVSEA2B August   2020  – June 2021 DRV8714-Q1 , DRV8718-Q1

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1. 6.1 VQFN (RVJ) 56-Pin Package and Pin Functions
    2. 6.2 VQFN (RHA) 40-Pin Package and Pin Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Timing Diagrams
    8. 7.8 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 External Components
      2. 8.3.2 Device Interface Variants
        1. 8.3.2.1 Serial Peripheral Interface (SPI)
        2. 8.3.2.2 Hardware (H/W)
      3. 8.3.3 Input PWM Control Modes
        1. 8.3.3.1 Half-Bridge Control Scheme With Input PWM Mapping
          1. 8.3.3.1.1 DRV8718-Q1 Half-Bridge Control
          2. 8.3.3.1.2 DRV8714-Q1 Half-Bridge Control
        2. 8.3.3.2 H-Bridge Control
          1. 8.3.3.2.1 DRV8714-Q1 H-Bridge Control
        3. 8.3.3.3 Split HS and LS Solenoid Control
          1. 8.3.3.3.1 DRV8714-Q1 Split HS and LS Solenoid Control
      4. 8.3.4 Smart Gate Driver
        1. 8.3.4.1 Functional Block Diagram
        2. 8.3.4.2 Slew Rate Control (IDRIVE)
        3. 8.3.4.3 Gate Drive State Machine (TDRIVE)
        4. 8.3.4.4 Propagation Delay Reduction (PDR)
          1. 8.3.4.4.1 PDR Pre-Charge/Pre-Discharge Control Loop Operation Details
            1. 8.3.4.4.1.1 PDR Pre-Charge/Pre-Discharge Setup
          2. 8.3.4.4.2 PDR Post-Charge/Post-Discharge Control Loop Operation Details
            1. 8.3.4.4.2.1 PDR Post-Charge/Post-Discharge Setup
          3. 8.3.4.4.3 Detecting Drive and Freewheel MOSFET
        5. 8.3.4.5 Automatic Duty Cycle Compensation (DCC)
        6. 8.3.4.6 Closed Loop Slew Time Control (STC)
          1. 8.3.4.6.1 STC Control Loop Setup
      5. 8.3.5 Tripler (Dual-Stage) Charge Pump
      6. 8.3.6 Wide Common-Mode Current Shunt Amplifiers
      7. 8.3.7 Pin Diagrams
        1. 8.3.7.1 Logic Level Input Pin (INx/ENx, INx/PHx, nSLEEP, nSCS, SCLK, SDI)
        2. 8.3.7.2 Logic Level Push Pull Output (SDO)
        3. 8.3.7.3 Logic Level Multi-Function Pin (DRVOFF/nFLT)
        4. 8.3.7.4 Quad-Level Input (GAIN, MODE)
        5. 8.3.7.5 Six-Level Input (IDRIVE, VDS)
      8. 8.3.8 Protection and Diagnostics
        1. 8.3.8.1  Gate Driver Disable (DRVOFF/nFLT and EN_DRV)
        2. 8.3.8.2  Low IQ Powered Off Braking (POB, BRAKE)
        3. 8.3.8.3  Fault Reset (CLR_FLT)
        4. 8.3.8.4  DVDD Logic Supply Power on Reset (DVDD_POR)
        5. 8.3.8.5  PVDD Supply Undervoltage Monitor (PVDD_UV)
        6. 8.3.8.6  PVDD Supply Overvoltage Monitor (PVDD_OV)
        7. 8.3.8.7  VCP Charge Pump Undervoltage Lockout (VCP_UV)
        8. 8.3.8.8  MOSFET VDS Overcurrent Protection (VDS_OCP)
        9. 8.3.8.9  Gate Driver Fault (VGS_GDF)
        10. 8.3.8.10 Thermal Warning (OTW)
        11. 8.3.8.11 Thermal Shutdown (OTSD)
        12. 8.3.8.12 Offline Short Circuit and Open Load Detection (OOL and OSC)
        13. 8.3.8.13 Watchdog Timer
        14. 8.3.8.14 Fault Detection and Response Summary Table
    4. 8.4 Device Functional Modes
      1. 8.4.1 Inactive or Sleep State
      2. 8.4.2 Standby State
      3. 8.4.3 Operating State
    5. 8.5 Programming
      1. 8.5.1 SPI Interface
      2. 8.5.2 SPI Format
      3. 8.5.3 SPI Interface for Multiple Slaves
        1. 8.5.3.1 SPI Interface for Multiple Slaves in Daisy Chain
    6. 8.6 Register Maps
      1. 8.6.1 DRV8718-Q1 Register Map
      2. 8.6.2 DRV8714-Q1 Register Map
      3. 8.6.3 DRV8718-Q1 Register Descriptions
        1. 8.6.3.1 DRV8718-Q1_STATUS Registers
        2. 8.6.3.2 DRV8718-Q1_CONTROL Registers
        3. 8.6.3.3 DRV8718-Q1_CONTROL_ADV Registers
        4. 8.6.3.4 DRV8718-Q1_STATUS_ADV Registers
      4. 8.6.4 DRV8714-Q1 Register Descriptions
        1. 8.6.4.1 DRV8714-Q1_STATUS Registers
        2. 8.6.4.2 DRV8714-Q1_CONTROL Registers
        3. 8.6.4.3 DRV8714-Q1_CONTROL_ADV Registers
        4. 8.6.4.4 DRV8714-Q1_STATUS_ADV Registers
  9. Application Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Gate Driver Configuration
          1. 9.2.2.1.1 VCP Load Calculation Example
          2. 9.2.2.1.2 IDRIVE Calculation Example
          3. 9.2.2.1.3 tDRIVE Calculation Example
          4. 9.2.2.1.4 Maximum PWM Switching Frequency
        2. 9.2.2.2 Current Shunt Amplifier Configuration
        3. 9.2.2.3 Power Dissipation
      3. 9.2.3 Application Curves
    3. 9.3 Initialization
  10. 10Power Supply Recommendations
    1. 10.1 Bulk Capacitance Sizing
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device Documentation and Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documents
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Layout Guidelines

Bypass the PVDD pin to the GND pin using a low-ESR ceramic bypass capacitor with a recommended value of 0.1 µF. Place this capacitor as close to the PVDD pin as possible with a thick trace or ground plane connected to the GND pin. Additionally, bypass the PVDD pin using a bulk capacitor rated for PVDD. This component can be electrolytic. This capacitance must be at least 10 µF. It is acceptable if this capacitance is shared with the bulk capacitance for the external power MOSFETs.

Additional bulk capacitance is required to bypass the high current path on the external MOSFETs. This bulk capacitance should be placed such that it minimizes the length of any high current paths through the external MOSFETs. The connecting metal traces should be as wide as possible, with numerous vias connecting PCB layers. These practices minimize inductance and allow the bulk capacitor to deliver high current.

Place a low-ESR ceramic capacitor between the CPL1 / CPH1 and CPL2 / CP2H pins. The CP1 capacitor should be 0.1 µF, rated for PVDD, and be of type X5R or X7R. The CP2 capacitor should be 0.1 µF, rated for PVDD + 16 V, and be of type X5R or X7R. Additionally, place a low-ESR ceramic capacitor between the VCP and PVDD pins. This capacitor should be 1 µF, rated for 16 V, and be of type X5R or X7R.

Bypass the DVDD pin to the DGND pin with a 1.0 µF low-ESR ceramic capacitor rated for 6.3 V and of type X5R or X7R. Place this capacitor as close to the pin as possible and minimize the path from the capacitor to the DGND pin. Bypass the AREF pin to the AGND pin with a 0.1 µF low-ESR ceramic capacitor rated for 6.3 V and of type X5R or X7R. Place this capacitor as close to the pin as possible and minimize the path from the capacitor to the AGND pin. If local bypass capacitors are already present on these power supplies in close proximity of the device to minimize noise, these additional components for DVDD and/or AREF are not required.

The DRAIN pin can be shorted directly to the PVDD pin. However, if a significant distance is between the device and the external MOSFETs, use a dedicated trace to connect to the common point of the drains of the high-side external MOSFETs. Ensure the PGNDx pins have a low impedance path to the sources of the low-side external MOSFETs and to the PCB GND plane.. pins directly to the GND plane. These recommendations allow for more accurate VDS sensing of the external MOSFETs for overcurrent detection.

Minimize the loop length for the high-side and low-side gate drivers. The high-side loop is from the GHx pin of the device to the high-side power MOSFET gate, then follows the high-side MOSFET source back to the SHx pin. The low-side loop is from the GLx pin of the device to the low-side power MOSFET gate, then follows the low-side MOSFET source back to the PGNDx pin.