With an integrated
high-side power MOSFET, the LM5012-Q1 delivers up to 2.5 A of output current. A constant on-time (COT) control architecture provides
nearly constant switching frequency with excellent load and line transient response.
Additional features of the LM5012-Q1 include ultra-low IQ
operation for high light-load efficiency, innovative peak overcurrent protection,
integrated VCC bias supply and bootstrap diode, precision enable and input UVLO, and
thermal shutdown protection with automatic recovery. An open-drain PGOOD indicator
provides sequencing, fault reporting, and output voltage monitoring.
The LM5012-Q1 2.5
A is qualified to automotive AEC-Q100 grade 1 and is available in a 8-pin
SO PowerPAD™ integrated circuit package. The device 1.27-mm pin pitch provides
adequate spacing for high-voltage applications.
With an integrated
high-side power MOSFET, the LM5012-Q1 delivers up to 2.5 A of output current. A constant on-time (COT) control architecture provides
nearly constant switching frequency with excellent load and line transient response.
Additional features of the LM5012-Q1 include ultra-low IQ
operation for high light-load efficiency, innovative peak overcurrent protection,
integrated VCC bias supply and bootstrap diode, precision enable and input UVLO, and
thermal shutdown protection with automatic recovery. An open-drain PGOOD indicator
provides sequencing, fault reporting, and output voltage monitoring.
The LM5012-Q1 2.5
A is qualified to automotive AEC-Q100 grade 1 and is available in a 8-pin
SO PowerPAD™ integrated circuit package. The device 1.27-mm pin pitch provides
adequate spacing for high-voltage applications.