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TPS28226

AKTIV

Halbbrücken-Gate-Treiber, 4 A, 27 V, mit 8 V UVLO für synchrone Gleichrichtung

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Datenblatt

TPS28226

AKTIV
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Produktdetails

Bootstrap supply voltage (max) (V) 33 Power switch MOSFET Input supply voltage (min) (V) 6.8 Input supply voltage (max) (V) 8 Peak output current (A) 4 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 3.5 Rating Catalog Propagation delay time (µs) 0.014 Rise time (ns) 10 Fall time (ns) 5 Iq (mA) 0.35 Input threshold TTL Channel input logic TTL Switch node voltage (V) 0 Features (x1) PWM, Synchronous Rectification Driver configuration Single
Bootstrap supply voltage (max) (V) 33 Power switch MOSFET Input supply voltage (min) (V) 6.8 Input supply voltage (max) (V) 8 Peak output current (A) 4 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 3.5 Rating Catalog Propagation delay time (µs) 0.014 Rise time (ns) 10 Fall time (ns) 5 Iq (mA) 0.35 Input threshold TTL Channel input logic TTL Switch node voltage (V) 0 Features (x1) PWM, Synchronous Rectification Driver configuration Single
VSON (DRB) 8 9 mm² (3 mm × 3 mm) SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm)
  • Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time
  • Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 V
  • Wide Power System Train Input Voltage: 3 V Up to 27 V
  • Wide Input PWM Signals: 2.0 V up to 13.2-V Amplitude
  • Capable to Drive MOSFETs with ≥40-A Current per Phase
  • High Frequency Operation: 14-ns Propagation Delay and 10-ns Rise/Fall Time Allow FSW – 2 MHz
  • Capable to Propagate <30-ns Input PWM Pulses
  • Low-Side Driver Sink On-Resistance (0.4 Ω) Prevents dV/dT Related Shoot-Through Current
  • 3-State PWM Input for Power Stage Shutdown
  • Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin
  • Thermal Shutdown
  • UVLO Protection
  • Internal Bootstrap Diode
  • Economical SOIC-8 and Thermally Enhanced 3-mm x 3-mm DFN-8 Packages
  • High Performance Replacement for Popular 3-State Input Drivers
  • Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time
  • Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 V
  • Wide Power System Train Input Voltage: 3 V Up to 27 V
  • Wide Input PWM Signals: 2.0 V up to 13.2-V Amplitude
  • Capable to Drive MOSFETs with ≥40-A Current per Phase
  • High Frequency Operation: 14-ns Propagation Delay and 10-ns Rise/Fall Time Allow FSW – 2 MHz
  • Capable to Propagate <30-ns Input PWM Pulses
  • Low-Side Driver Sink On-Resistance (0.4 Ω) Prevents dV/dT Related Shoot-Through Current
  • 3-State PWM Input for Power Stage Shutdown
  • Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin
  • Thermal Shutdown
  • UVLO Protection
  • Internal Bootstrap Diode
  • Economical SOIC-8 and Thermally Enhanced 3-mm x 3-mm DFN-8 Packages
  • High Performance Replacement for Popular 3-State Input Drivers

The is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The is a solution that provides high efficiency, small size and low EMI emissions.

The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.

The is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The is a solution that provides high efficiency, small size and low EMI emissions.

The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.

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Technische Dokumentation

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Top-Dokumentation Typ Titel Format-Optionen Neueste englische Version herunterladen Datum
* Datenblatt TPS28226 High-Frequency 4-A Sink Synchronous MOSFET Drivers datasheet (Rev. A) PDF | HTML 26.11.2014
Anwendungshinweis Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 25.03.2024
Anwendungshinweis Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 08.09.2023
Anwendungshinweis Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 17.02.2022
Application brief External Gate Resistor Selection Guide (Rev. A) 28.02.2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28.02.2020
Weitere Dokumente Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29.10.2018
Auswahlhilfe Power Management Guide 2018 (Rev. R) 25.06.2018
Weitere Dokumente Power Loss Calculation for Sync Buck Converter 14.02.2007

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SOIC (D) 8 Ultra Librarian
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