The ISO5452 is a
5.7-kV RMS, reinforced isolated gate driver for IGBTs and MOSFETs with
split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input
side operates from a single 2.25-V to 5.5-V supply. The output side allows for a
supply range from minimum 15 V to maximum 30 V. Two
complementary CMOS inputs control the output state of the gate driver. The short
propagation time of 76 ns assures accurate control of the output stage.
An internal desaturation (DESAT) fault
detection recognizes when the IGBT is in an overcurrent condition. Upon a DESAT
detect, a Mute logic immediately blocks the output of the isolator and initiates a
soft-turn-off procedure which disables OUTH, and pulls OUTL to low over a time span
of 2 µs. When OUTL reaches 2 V with respect to the
most negative supply potential, V EE2, the gate driver output is pulled
hard to V EE2 potential, turning the IGBT immediately off.
When desaturation is active, a fault signal is sent across the isolation barrier, pulling the
FLT output at the input side low and blocking the isolator input. Mute logic is activated through the soft-turn-off period. The
FLT output condition is latched and can be reset only after RDY goes high, through a low-active pulse at the
RST input.
When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to V EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path, preventing IGBT to be dynamically turned on during high voltage transient conditions.
The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low, otherwise this output is high.
The ISO5452 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.
The ISO5452 is a
5.7-kV RMS, reinforced isolated gate driver for IGBTs and MOSFETs with
split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input
side operates from a single 2.25-V to 5.5-V supply. The output side allows for a
supply range from minimum 15 V to maximum 30 V. Two
complementary CMOS inputs control the output state of the gate driver. The short
propagation time of 76 ns assures accurate control of the output stage.
An internal desaturation (DESAT) fault
detection recognizes when the IGBT is in an overcurrent condition. Upon a DESAT
detect, a Mute logic immediately blocks the output of the isolator and initiates a
soft-turn-off procedure which disables OUTH, and pulls OUTL to low over a time span
of 2 µs. When OUTL reaches 2 V with respect to the
most negative supply potential, V EE2, the gate driver output is pulled
hard to V EE2 potential, turning the IGBT immediately off.
When desaturation is active, a fault signal is sent across the isolation barrier, pulling the
FLT output at the input side low and blocking the isolator input. Mute logic is activated through the soft-turn-off period. The
FLT output condition is latched and can be reset only after RDY goes high, through a low-active pulse at the
RST input.
When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to V EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path, preventing IGBT to be dynamically turned on during high voltage transient conditions.
The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low, otherwise this output is high.
The ISO5452 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.