LMG3104R017

The LMG310xR0xx devices are a family of 100V enhancement-mode Gallium Nitride (GaN) HEMT with integrated high frequency driver. The LMG310xR0xx incorporates a high side level shifter and bootstrap circuit, so that two LMG310xR0xx devices can be used to form a half bridge without an additional level shifter. LMG3104R0xx offers logic input interlock in Independent Input Mode (IIM).

GaN FETs provide significant advantages for power conversion as GaN FETs have zero reverse recovery, very small input capacitance CISS, and output capacitance COSS. The driver and the GaN FET are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG310xR0xx device is available in a 6.5mm × 4mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs support 3.3V and 5V logic levels, regardless of the VCC voltage. A proprietary bootstrap voltage control technique regulates the gate voltages of the enhancement mode GaN FETs within the safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. The device is an excellent option for applications requiring high-frequency, high-efficiency operation in a small form factor.