|Package | PIN:||VQFN (RGW) | 20|
|Temp:||S (-40 to 95)|
- 10-Bit Resolution
- 8-Channel P-Gamma
- 1-Channel P-VCOM
- High Slew Rate VCOM: 45 V/µs
- 16x Rewritable Nonvolatile Memory
- Two Independent Pin-Selectable Memory Banks
- Rail-to-Rail Output:
- 300 mV Min Swing-to-Rail (10 mA)
- > 300 mA Max IOUT
- Low Supply Current
- Supply Voltage: 9 V to 20 V
- Digital Supply: 2 V to 5.5 V
- Two-Wire Interface:
- Supports 400 kHz and 3.4 MHz
- 1/2 AVDD Capability
- TFT-LCD Reference Drivers
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Texas Instruments BUF08630RGWR
The BUF08630 offers eight programmable gamma channels and one programmable VCOM channel.
The final gamma and VCOM values can be stored in the on-chip, nonvolatile memory. To allow for programming errors or liquid crystal display (LCD) panel rework, the BUF08630 supports up to 16 write operations to the on-chip memory.
The BUF08630 has two separate memory banks, allowing simultaneous storage of two different gamma curves to facilitate switching between gamma curves.
All gamma and VCOM channels offer a rail-to-rail output that typically swings to within 150 mV of either supply rail with a 10-mA load. All channels are programmed using a two-wire interface that supports standard operations up to 400 kHz, and high-speed data transfers up to 3.4 MHz.
The BUF08630 is manufactured using Texas Instruments’ proprietary, state-of-the-art, high-voltage CMOS process. This process offers very dense logic and high supply voltage operation of up to 20V. The BUF08630 is available in a 20-pin QFN package, and is specified from –40°C to +95°C.