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CSD17381F4T ACTIVE

30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 117 mOhm, gate ESD protection

US ECCN: EAR99 US/Local Export Classification Number

Inventory:  
 

Quality information

RoHS Yes
REACH Yes
Lead finish / Ball material Call TI
MSL rating / Peak reflow Level-1-260C-UNLIM
Quality, reliability
& packaging information

Information included:

  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
View or download

Packaging information

Package | Pins Package qty | Carrier: Operating temperature range (°C)
PICOSTAR (YJC) | 3 250 | SMALL T&R
-55 to 150
Package | Pins PICOSTAR (YJC) | 3
Package qty | Carrier: 250 | SMALL T&R
Operating temperature range (°C) -55 to 150
View TI packaging information

Features for the CSD17381F4

  • Ultra-Low On-Resistance
  • Ultra-Low Qg and Qgd
  • Low Threshold Voltage
  • Ultra-Small Footprint (0402 Case Size)
    • 1.0 mm × 0.6 mm
  • Ultra-Low Profile
    • 0.35 mmHeight
  • Integrated ESD Protection Diode
    • Rated >4 kV HBM
    • Rated >2 kVCDM
  • Lead and Halogen Free
  • RoHS Compliant

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Description for the CSD17381F4

This 90 mΩ, 30 V N-Channel FemtoFET™ MOSFET technology is designed and optimized tominimize the footprint in many handheld and mobile applications. This technology is capable ofreplacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Pricing


Qty Price (USD)
1-99 0.169
100-249 0.115
250-999 0.089
1,000+ 0.059

Additional package qty | carrier options

Package qty | Carrier 3,000 | LARGE T&R
Inventory
Qty | Price (USD) 1ku | 0.051 1-99 0.146 100-249 0.099 250-999 0.077 1,000+ 0.051
Custom reel may be available