Gallium nitride (GaN) is an exciting new technology offering new levels of performance and density for switching power converters. TI is committed to supplying industry leading power GaN components and easy-to-use modules that meet next generation system requirements and TI's high standards of quality and reliability.
Integrating GaN FETs and drivers into one, easy to use package.
Award-winning high-speed gate drivers enabling high power density and design simplicity, available in single and dual channel low-side as well as high-side/low-side configurations.
Application-specific analog power controllers for deploying GaN power switches in today's high-frequency power converters with ease.
Harnessing the power of GaN power switches using fully programmable digital controllers that offer the flexibility to implement high-frequency switch mode power converters and investigate advanced power topologies.
Texas Instruments is an industry leader in semiconductor technology, with longtime experience in bringing reliable semiconductor products to market, including non-silicon technologies like ferroelectric random access memory (FRAM). We are well-suited to bring reliable GaN products to market through GaN-relevant qualification methodology and application-relevant testing.
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View featured GaN reference designs below, or see all GaN designs in the TI reference design library